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1.1 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTHC5513T1 by Onsemi

NTHC5513T1

Onsemi

NTHC5513T1 by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations, ideal for SWITCHING applications. Features include 20V DS Breakdown Voltage, 10A IDM, and 0.08 ohm RDS(on). With 2 elements in a RECTANGULAR package, it operates at up to 150 °C for various electronic designs.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.1 A

3.1 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e0

1

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL AND P-CHANNEL

1.1 W

10 A

Not Qualified

Other Transistors

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

NTHD3100CT1 by Onsemi

NTHD3100CT1

Onsemi

NTHD3100CT1 by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations, ideal for SWITCHING applications. It features 2 elements with built-in diode, max drain current of 3.2A, and 0.08 ohm on-resistance. Operating at up to 150 °C, this MOSFET is suitable for various power management tasks in electronics.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

3.2 A

2.9 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e0

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL AND P-CHANNEL

1.1 W

12 A

Not Qualified

Other Transistors

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

NTHD3100CT3G by Onsemi

NTHD3100CT3G

Onsemi

NTHD3100CT3G by Onsemi is a Power FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 3.2A, on-resistance of 0.08 ohm, and max power dissipation of 1.1W. Operating at up to 150 °C, it's a surface-mount transistor in small outline package suitable for various electronic designs.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

3.2 A

2.9 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.1 W

12 A

Not Qualified

Other Transistors

YES

TIN

C BEND

DUAL

SWITCHING

SILICON

NTHD3100CT3 by Onsemi

NTHD3100CT3

Onsemi

NTHD3100CT3 by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations, ideal for SWITCHING applications. It features 2 elements with built-in diode, 20V DS Breakdown Voltage, and 0.08 ohm Drain-Source Resistance. This small outline transistor has a max power dissipation of 1.1W and operates at up to 150 °C temperature.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

3.2 A

2.9 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e0

1

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL AND P-CHANNEL

1.1 W

12 A

Not Qualified

Other Transistors

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

NTGD4161PT1G by Onsemi

NTGD4161PT1G

Onsemi

NTGD4161PT1G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 elements with built-in diode, GULL WING terminals, and 0.16 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 1.1W and can handle up to 10A pulsed drain current.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

2.1 A

1.5 A

.16 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.1 W

10 A

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

UPA2738GR-E2-AX by Renesas Electronics

UPA2738GR-E2-AX

Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Feedback Capacitance (Crss): 650 pF; Transistor Element Material: SILICON;

10 mJ

SINGLE WITH BUILT-IN DIODE

30 V

10 A

.029 ohm

METAL-OXIDE SEMICONDUCTOR

650 pF

R-PDSO-G8

e4

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.1 W

100 A

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

DMN2451UFDQ-13 by Diodes Incorporated

DMN2451UFDQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Drain-Source On Resistance: .8 ohm; Package Shape: SQUARE;

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

.96 A

.8 ohm

METAL-OXIDE SEMICONDUCTOR

3.1 pF

S-PDSO-N3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

1.1 W

3 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

NO LEAD

DUAL

SWITCHING

SILICON