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Texas Instruments Power Bipolar Junction Transistors (BJT) 5

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ULQ2003AN by Texas Instruments

ULQ2003AN

Texas Instruments

ULQ2003AN by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, making it ideal for switching applications. The package style is in-line with terminal finish in Ni/Pd/Au, suitable for complex configurations.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-001BB

R-PDIP-T16

e4

7

16

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

Not Qualified

NO

Nickel/Palladium/Gold (Ni/Pd/Au)

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

ULN2003APWRG4 by Texas Instruments

ULN2003APWRG4

Texas Instruments

ULN2003APWRG4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. This surface-mount transistor in a small outline package is ideal for complex configurations requiring high reliability.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MO-153AB

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

ULN2002ANE4 by Texas Instruments

ULN2002ANE4

Texas Instruments

ULN2002ANE4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications due to its complex configuration and through-hole terminal form in a rectangular package style.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-001BB

R-PDIP-T16

e4

7

16

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

Not Qualified

NO

Nickel/Palladium/Gold (Ni/Pd/Au)

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

1.6 V

ULN2004ANE4 by Texas Instruments

ULN2004ANE4

Texas Instruments

ULN2004ANE4 by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications due to its complex configuration and max VCE of 50V in a rectangular package style (IN-LINE).

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-001BB

R-PDIP-T16

e4

7

16

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

Not Qualified

NO

Nickel/Palladium/Gold (Ni/Pd/Au)

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

1.6 V

SN75468NE4 by Texas Instruments

SN75468NE4

Texas Instruments

SN75468NE4 by Texas Instruments is a NPN BJT transistor with VCEsat of 1.6V, IC of 0.5A, and VCEO of 100V. Ideal for switching applications in temperatures ranging from 0 to 70°C, it features a PLASTIC/EPOXY package with 16 terminals in an IN-LINE style.

LOGIC LEVEL COMPATIBLE

.5 A

100 V

COMPLEX

MS-001BB

R-PDIP-T16

e4

7

16

70 Cel

0 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

Not Qualified

NO

NICKEL PALLADIUM GOLD

THROUGH-HOLE

DUAL

SWITCHING

SILICON

1.6 V