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Diodes Incorporated Power Bipolar Junction Transistors (BJT) 57

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX718STOA by Diodes Incorporated

ZTX718STOA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1.5 W

NO

WIRE

SINGLE

SILICON

180 MHz

.26 V

ZTX718STOB by Diodes Incorporated

ZTX718STOB

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1.5 W

NO

WIRE

SINGLE

SILICON

180 MHz

.26 V

ZTX718STZ by Diodes Incorporated

ZTX718STZ

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

1 W

1.5 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

180 MHz

.26 V

ZTX618STOA by Diodes Incorporated

ZTX618STOA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;

3.5 A

30 pF

20 V

SINGLE

40

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1.5 W

NO

WIRE

SINGLE

SILICON

140 MHz

.255 V

ZTX618STOB by Diodes Incorporated

ZTX618STOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;

3.5 A

30 pF

20 V

SINGLE

40

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1.5 W

NO

WIRE

SINGLE

SILICON

140 MHz

.255 V

ZTX618STZ by Diodes Incorporated

ZTX618STZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;

3.5 A

30 pF

20 V

SINGLE

40

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1.5 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

140 MHz

.255 V

FZT560QTC by Diodes Incorporated

FZT560QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .15 A; Maximum Collector-Emitter Voltage: 500 V;

COLLECTOR

.15 A

500 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

60 MHz

BCP5316TA by Diodes Incorporated

BCP5316TA

Diodes Incorporated

BCP5316TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 100, and can handle up to 1A IC. With a max operating temp of 150°C, it's ideal for automotive electronics due to AEC-Q101 compliance.

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

FZT751QTC by Diodes Incorporated

FZT751QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

HIGH RELIABILITY

COLLECTOR

3 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

ZX5T953GQTA by Diodes Incorporated

ZX5T953GQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 100 V;

HIGH RELIABILITY

COLLECTOR

5 A

100 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

125 MHz

FZT951QTC by Diodes Incorporated

FZT951QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY

COLLECTOR

5 A

60 V

SINGLE

10

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

120 MHz

FZT953QTA by Diodes Incorporated

FZT953QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 5 A; Reference Standard: AEC-Q101;

HIGH RELIABILITY

COLLECTOR

5 A

100 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

125 MHz

BCP5416QTA by Diodes Incorporated

BCP5416QTA

Diodes Incorporated

Diodes Inc. BCP5416QTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 25, and IC of 1A. With a max operating temp of 150°C, it's ideal for automotive electronics meeting AEC-Q101 and IATF 16949 standards.

COLLECTOR

1 A

25 pF

45 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101; IATF 16949

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

APT13005SI-G1 by Diodes Incorporated

APT13005SI-G1

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 3.2 A; Minimum Operating Temperature: -65 Cel;

3.2 A

450 V

SINGLE

11

TO-251

R-PSIP-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005STF-G1 by Diodes Incorporated

APT13005STF-G1

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 3.2 A; Minimum Operating Temperature: -65 Cel;

ISOLATED

3.2 A

450 V

SINGLE

11

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005SU-G1 by Diodes Incorporated

APT13005SU-G1

Diodes Incorporated

Diodes Inc.'s APT13005SU-G1 is a NPN BJT transistor with max. collector-emitter voltage of 450V, ideal for switching applications. With a max. collector current of 3.2A and transition frequency of 4MHz, it operates b/w -65 to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.

3.2 A

450 V

SINGLE

11

TO-126

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

FZT749QTA by Diodes Incorporated

FZT749QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

100 pF

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

160 MHz

.6 V

FZT749QTC by Diodes Incorporated

FZT749QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

100 pF

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

160 MHz

.6 V

BCP53QTA by Diodes Incorporated

BCP53QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

BCP5316QTA by Diodes Incorporated

BCP5316QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

DXT13003EK-13 by Diodes Incorporated

DXT13003EK-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

1.5 A

460 V

SINGLE

5

TO-252

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

Matte Tin (Sn)

GULL WING

SINGLE

NOT SPECIFIED

SILICON

4 MHz

DCP69-16-13 by Diodes Incorporated

DCP69-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

17 pF

20 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

.5 V

FZT957QTC by Diodes Incorporated

FZT957QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 85 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

23 pF

300 V

SINGLE

90

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SILICON

85 MHz

.24 V

DCP69-25-13 by Diodes Incorporated

DCP69-25-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

17 pF

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

.5 V

APT13005DI-G1 by Diodes Incorporated

APT13005DI-G1

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Package Body Material: PLASTIC/EPOXY;

4 A

450 V

DARLINGTON WITH BUILT-IN DIODE

8

TO-251

R-PSIP-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005DT-G1 by Diodes Incorporated

APT13005DT-G1

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Package Style (Meter): FLANGE MOUNT;

4 A

450 V

DARLINGTON WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005DTF-G1 by Diodes Incorporated

APT13005DTF-G1

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 8;

ISOLATED

4 A

450 V

DARLINGTON WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

DXT13003DK-13 by Diodes Incorporated

DXT13003DK-13

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 1.5 A; Package Shape: RECTANGULAR;

COLLECTOR

1.5 A

450 V

DARLINGTON WITH BUILT-IN DIODE

5

TO-252

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

Matte Tin (Sn)

GULL WING

SINGLE

NOT SPECIFIED

SILICON

4 MHz

ZXTNS618MCTA by Diodes Incorporated

ZXTNS618MCTA

Diodes Incorporated

Power Bipolar Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: NICKEL PALLADIUM GOLD; Qualification: Not Qualified;

e4

1

260

Not Qualified

Other Transistors

NICKEL PALLADIUM GOLD

30

FZT692BQTA by Diodes Incorporated

FZT692BQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

12 pF

SINGLE

150

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

ZXTP19100CZQTA by Diodes Incorporated

ZXTP19100CZQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 142 MHz; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSSO-F3;

HIGH RELIABILITY

COLLECTOR

2 A

100 V

SINGLE

20

R-PSSO-F3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SILICON

142 MHz

FZT657QTA by Diodes Incorporated

FZT657QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): .5 A; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

COLLECTOR

.5 A

300 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

30 MHz

FZT795AQTA by Diodes Incorporated

FZT795AQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;

HIGH RELIABILITY

COLLECTOR

.5 A

140 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

FZT949QTA by Diodes Incorporated

FZT949QTA

Diodes Incorporated

FZT949QTA by Diodes Inc. is a PNP BJT with max. VCE of 30V and IC of 5.5A, ideal for automotive applications due to AEC-Q101 standard compliance. Featuring hFE of 75 and fT of 100MHz, it's designed for surface mount in small outline packages with Gull Wing terminals.

HIGH RELIABILITY

COLLECTOR

5.5 A

30 V

SINGLE

75

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SILICON

100 MHz

FZT690BQTA by Diodes Incorporated

FZT690BQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 3 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

COLLECTOR

3 A

45 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

FZT600BQTA by Diodes Incorporated

FZT600BQTA

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

HIGH RELIABILITY

COLLECTOR

2 A

15 pF

140 V

DARLINGTON

5000

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

1.2 V

ZXTP01500BGQTA by Diodes Incorporated

ZXTP01500BGQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 80;

HIGH RELIABILITY

COLLECTOR

.15 A

500 V

SINGLE

80

R-PDSO-G4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

60 MHz

2DA1971Q-7 by Diodes Incorporated

2DA1971Q-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 75 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

HIGH RELIABILITY

COLLECTOR

.5 A

400 V

SINGLE

140

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

75 MHz

ZXTN19020DZQTA by Diodes Incorporated

ZXTN19020DZQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Collector Current (IC): 7.5 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

COLLECTOR

7.5 A

20 V

SINGLE

50

R-PSSO-F3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

160 MHz

BCP5610QTA by Diodes Incorporated

BCP5610QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5610QTC by Diodes Incorporated

BCP5610QTC

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

ZXTP19040CGQ-7 by Diodes Incorporated

ZXTP19040CGQ-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;

HIGH RELIABILITY

COLLECTOR

3 A

40 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

ZXTP2014ZQTA by Diodes Incorporated

ZXTP2014ZQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

33 pF

140 V

SINGLE

45

R-PSSO-F3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2.1 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

120 MHz

.33 V

FZT705QTA by Diodes Incorporated

FZT705QTA

Diodes Incorporated

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

15 pF

120 V

DARLINGTON

2000

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

160 MHz

2.5 V

BCP5616TQTA by Diodes Incorporated

BCP5616TQTA

Diodes Incorporated

BCP5616TQTA by Diodes Inc. is a NPN BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 40, and IC of 1A, it operates at temperatures from -55 to 150°C. This small outline package with Gull Wing terminals is ideal for high-speed switching in automotive and industrial electronics.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TQTC by Diodes Incorporated

BCP5616TQTC

Diodes Incorporated

Diodes Inc. BCP5616TQTC is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline SMT designs in automotive and industrial electronics with operating temp range -55 to 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

FMMT411FDBW-7 by Diodes Incorporated

FMMT411FDBW-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

17 pF

15 V

SINGLE

100

S-PDSO-N3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

NPN

1.8 W

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

110 MHz

.1 V

DXTN22040DFG-7 by Diodes Incorporated

DXTN22040DFG-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 198 MHz; Maximum Power Dissipation (Abs): 2.3 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

11 pF

40 V

SINGLE

140

S-PDSO-F8

e3

1

8

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

NPN

2.3 W

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

198 MHz

.6 V