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90 MHz Power Bipolar Junction Transistors (BJT) 5

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NJVMJD45H11RLG by Onsemi

NJVMJD45H11RLG

Onsemi

NJVMJD45H11RLG by Onsemi is a PNP BJT transistor for switching applications. It has a max collector-emitter voltage of 80V, max collector current of 8A, and min DC current gain of 40. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

20 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

90 MHz

NJVNJD35N04G by Onsemi

NJVNJD35N04G

Onsemi

NJVNJD35N04G by Onsemi is a NPN Darlington BJT with 45W power dissipation, 4A collector current, and 300 min hFE. Ideal for automotive applications due to AEC-Q101 standard compliance and high transition frequency of 90MHz.

4 A

DARLINGTON

300

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

45 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

90 MHz

MJD45H11-001 by Onsemi

MJD45H11-001

Onsemi

MJD45H11-001 by Onsemi is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W power dissipation. Ideal for switching applications, it has a min hFE of 40 and operates up to 150 °C. The package style is in-line with through-hole terminals.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSIP-T3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

235

PNP

20 W

Not Qualified

Other Transistors

NO

Tin/Lead (Sn/Pb)

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

90 MHz

NJVMJD45H11RLG-VF01 by Onsemi

NJVMJD45H11RLG-VF01

Onsemi

NJVMJD45H11RLG-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 40, Vce of 80V, and Ic of 8A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and fT of 90MHz.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

90 MHz

FZT855QTA by Diodes Incorporated

FZT855QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 90 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

22 pF

150 V

SINGLE

15

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

3 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SILICON

90 MHz

.355 V