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65 MHz Power Bipolar Junction Transistors (BJT) 6

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MJD200T4G by Onsemi

MJD200T4G

Onsemi

MJD200T4G by Onsemi is a NPN BJT transistor with 5A max collector current, 13W power dissipation, and 65MHz transition frequency. Ideal for amplifier applications, it features a small outline package, matte tin terminal finish, and can operate up to 150°C.

COLLECTOR

5 A

25 V

SINGLE

10

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

13 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

65 MHz

MJD200G by Onsemi

MJD200G

Onsemi

The Onsemi MJD200G is a NPN BJT transistor with 5A IC, 25V VCE, and 13W Pd. Ideal for amplifier applications, it has a hFE of 10 and fT of 65MHz. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs.

COLLECTOR

5 A

25 V

SINGLE

10

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

13 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

65 MHz

MJE210G by Onsemi

MJE210G

Onsemi

MJE210G by Onsemi is a PNP BJT transistor with 40V VCE, 5A IC, and 1.5W power dissipation. Ideal for amplifier applications due to its high transition frequency of 65MHz and single configuration in a plastic/epoxy package. Operating up to 150°C, it has through-hole terminals with matte tin finish.

5 A

40 V

SINGLE

10

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

65 MHz

MJE210TG by Onsemi

MJE210TG

Onsemi

MJE210TG by Onsemi is a PNP BJT with 15W power dissipation, 40V max. collector-emitter voltage, and 5A max. collector current. Ideal for amplifier applications due to its 65MHz transition frequency and single terminal configuration in a rectangular package style.

5 A

40 V

SINGLE

10

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

15 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

65 MHz

MJE210T by Onsemi

MJE210T

Onsemi

MJE210T by Onsemi is a PNP BJT transistor with 40V VCEO, 5A IC, and 1.5W power dissipation. Ideal for amplifier applications due to its hFE of 10 and fT of 65MHz. Packaged in plastic/epoxy with through-hole terminals, it operates up to 150 °C.

5 A

40 V

SINGLE

10

TO-225

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

65 MHz

NJD2873RL by Onsemi

NJD2873RL

Onsemi

NJD2873RL by Onsemi is a NPN BJT transistor with 50V VCEO, 2A IC, and 15W Ptot. Ideal for amplifier applications, it has hFE of 40, fT of 65MHz, and operates up to 175 °C. This Gull Wing package with tin lead finish is surface mountable and features a small outline design.

COLLECTOR

2 A

50 V

SINGLE

40

R-PSSO-G2

e0

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

AMPLIFIER

SILICON

65 MHz