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40 MHz Power Bipolar Junction Transistors (BJT) 6

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTE378 by Nte Electronics

NTE378

Nte Electronics

NTE378 by Nte Electronics is a PNP BJT transistor with 80V VCE, 10A IC, and 50W power dissipation. Ideal for switching applications due to its high hFE of 40 and fT of 40MHz. The package style is flange mount with through-hole terminals.

COLLECTOR

10 A

80 V

SINGLE

40

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

50 W

50 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

40 MHz

2SD2396K by ROHM

2SD2396K

ROHM

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

ISOLATED

3 A

60 V

SINGLE

1000

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

30 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

40 MHz

D44C12G by Onsemi

D44C12G

Onsemi

D44C12G by Onsemi is a NPN Power BJT with 80V VCEO, 4A IC, and 30W Ptot. Ideal for switching applications, it has a min hFE of 20 and operates up to 150 °C. The transistor comes in a plastic package with through-hole terminals.

COLLECTOR

4 A

80 V

SINGLE

20

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

30 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

40 MHz

D45C12G by Onsemi

D45C12G

Onsemi

D45C12G by Onsemi is a PNP BJT transistor with 80V VCEO, 4A IC, and 30W power dissipation. Ideal for switching applications, it has a min hFE of 20 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

4 A

80 V

SINGLE

20

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

30 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

40

SWITCHING

SILICON

40 MHz

2N6338G by Onsemi

2N6338G

Onsemi

The Onsemi 2N6338G is a NPN BJT transistor with max. collector-emitter voltage of 100V, max. collector current of 25A, and max. power dissipation of 200W. Ideal for switching applications due to its single configuration and high transition frequency of 40MHz in a round package shape.

COLLECTOR

25 A

100 V

SINGLE

12

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

40 MHz

NJVMJD253T4G-VF01 by Onsemi

NJVMJD253T4G-VF01

Onsemi

NJVMJD253T4G-VF01 by Onsemi is a PNP BJT transistor with hFE of 15, VCEO of 100V, and IC of 4A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 40MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.

COLLECTOR

4 A

100 V

SINGLE

15

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AMPLIFIER

SILICON

40 MHz