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30 A Power Bipolar Junction Transistors (BJT) 4

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BUF420M by STMicroelectronics

BUF420M

STMicroelectronics

BUF420M by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max VCEsat of 2V, supports up to 200W power dissipation, and operates at a max temp of 200 °C. Ideal for high-performance electronic circuits requiring robust performance.

COLLECTOR

30 A

450 V

SINGLE

TO-3

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

200 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

PIN/PEG

BOTTOM

SWITCHING

SILICON

.1 MHz

3620 ns

2 V

STW3040 by STMicroelectronics

STW3040

STMicroelectronics

STW3040 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 160 W, operates up to 150 °C, and supports collector-emitter voltages of 400 V. Ideal for high-performance electronic circuits.

30 A

400 V

SINGLE

10

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

160 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2N5302G by Onsemi

2N5302G

Onsemi

The Onsemi 2N5302G is a NPN power BJT with max. collector-emitter voltage of 60V and max. collector current of 30A. It has a min. DC current gain of 5 and can dissipate up to 200W power. Ideal for switching applications, it operates b/w -65 °C to 200°C temperatures with a transition frequency of 2MHz.

COLLECTOR

30 A

60 V

SINGLE

5

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

2 MHz

MJ11012G by Onsemi

MJ11012G

Onsemi

MJ11012G by Onsemi is a NPN BJT with 200W power dissipation, 60V max collector-emitter voltage, and 30A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with round shape and matte tin terminal finish.

COLLECTOR

30 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

AMPLIFIER

SILICON

4 MHz