Loading...

SEPARATE, 2 ELEMENTS Power Bipolar Junction Transistors (BJT) 9

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NJX1675PDR2G by Onsemi

NJX1675PDR2G

Onsemi

NJX1675PDR2G by Onsemi is a Power BJT with NPN/PNP polarity, 2 separate elements. Ideal for switching applications, it has hFE of 180, VCE of 30V, and IC of 3A. With a max temp of 150 °C and fT of 100MHz, this transistor in Gull Wing package suits SMT designs.

3 A

30 V

SEPARATE, 2 ELEMENTS

180

R-PDSO-G8

e3

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

STD815CP40 by STMicroelectronics

STD815CP40

STMicroelectronics

STD815CP40 by STMicroelectronics is a versatile power BJT featuring NPN and PNP configurations for efficient switching applications. It supports a max collector-emitter voltage of 400V, operates up to 150 °C, and offers a min DC gain (hFE) of 4. Ideal for dual-element designs in various electronic circuits.

1.5 A

400 V

SEPARATE, 2 ELEMENTS

4

R-PDIP-T8

e3

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN AND PNP

Not Qualified

BIP General Purpose Small Signal

NO

MATTE TIN

THROUGH-HOLE

DUAL

SWITCHING

SILICON

STD830CP40 by STMicroelectronics

STD830CP40

STMicroelectronics

STD830CP40 by STMicroelectronics is a versatile NPN/PNP power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, operates at up to 150 °C, and supports a collector current of 3A. Ideal for efficient circuit designs in various electronic devices.

3 A

400 V

SEPARATE, 2 ELEMENTS

4

R-PDIP-T8

e3

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN AND PNP

Not Qualified

BIP General Purpose Small Signal

NO

MATTE TIN

THROUGH-HOLE

DUAL

SWITCHING

SILICON

STS05DTP03 by STMicroelectronics

STS05DTP03

STMicroelectronics

STS05DTP03 from STMicroelectronics is a versatile NPN/PNP BJT designed for switching applications. It features a max power dissipation of 2W, supports up to 5A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

5 A

30 V

SEPARATE, 2 ELEMENTS

80

R-PDSO-G8

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

2 W

Not Qualified

BIP General Purpose Small Signal

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STS01DTP06 by STMicroelectronics

STS01DTP06

STMicroelectronics

STS01DTP06 by STMicroelectronics is a Power BJT with NPN and PNP channels, ideal for switching applications. It has 2 elements in a small outline package, with max power dissipation of 2W and max collector current of 3A. The transistor operates up to 150°C, features dual terminals with Gull Wing form, and can withstand peak reflow at 260°C for up to 40s.

3 A

30 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G8

e4

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

2 W

Not Qualified

BIP General Purpose Small Signal

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

40

SWITCHING

SILICON

NSV60200DMTWTBG by Onsemi

NSV60200DMTWTBG

Onsemi

NSV60200DMTWTBG by Onsemi is a PNP BJT transistor with VCEsat of 0.45V, hFE of 40, and IC of 2A. Ideal for switching applications, it has a max operating temp of 150 °C and collector-emitter voltage of 60V. Suitable for surface mount with small outline package style.

COLLECTOR

2 A

18 pF

60 V

SEPARATE, 2 ELEMENTS

40

S-PDSO-N6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

PNP

1.8 W

2.27 W

AEC-Q101

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

155 MHz

.45 V

ZDT795AQTA by Diodes Incorporated

ZDT795AQTA

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2.75 W; Maximum Collector Current (IC): .5 A;

.5 A

15 pF

140 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G8

e3

1

2

8

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2.75 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

.3 V

DXTN3C100PD-13 by Diodes Incorporated

DXTN3C100PD-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 3 A; Terminal Finish: MATTE TIN;

COLLECTOR

3 A

11 pF

100 V

SEPARATE, 2 ELEMENTS

10

R-PDSO-F8

e3

2

8

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

130 MHz

.33 V

DXTC3C100PD-13 by Diodes Incorporated

DXTC3C100PD-13

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 3 A; Minimum Operating Temperature: -55 Cel;

COLLECTOR

3 A

11 pF

100 V

SEPARATE, 2 ELEMENTS

10

R-PDSO-F8

e3

2

8

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

130 MHz

.33 V