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Infineon Technologies Other Function Transistors 41

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BC857BF-E6327 by Infineon Technologies

BC857BF-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 220;

.1 A

SINGLE

220

1

150 Cel

PNP

.25 W

Other Transistors

YES

BC860BF-E6327 by Infineon Technologies

BC860BF-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

.1 A

SINGLE

220

1

150 Cel

PNP

.25 W

Other Transistors

YES

BFP405F-E6327 by Infineon Technologies

BFP405F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .055 W; Maximum Collector Current (IC): .012 A;

.012 A

SINGLE

50

1

1

150 Cel

260

NPN

.055 W

Other Transistors

YES

18000 MHz

BFP420F-E6327 by Infineon Technologies

BFP420F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

50

1

1

150 Cel

260

NPN

.16 W

Other Transistors

YES

18000 MHz

BFR360L3-E6327 by Infineon Technologies

BFR360L3-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

90

1

150 Cel

NPN

.21 W

Other Transistors

YES

11000 MHz

BFR360F-E6327 by Infineon Technologies

BFR360F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

60

1

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

11000 MHz

BFR380F-E6327 by Infineon Technologies

BFR380F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .38 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

90

1

1

150 Cel

260

NPN

.38 W

Other Transistors

YES

11000 MHz

BFS483-E6327 by Infineon Technologies

BFS483-E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A; Minimum DC Current Gain (hFE): 50;

.065 A

50

1

150 Cel

260

NPN

.45 W

Other Transistors

YES

6000 MHz

BSP61-E6327 by Infineon Technologies

BSP61-E6327

Infineon Technologies

PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

1 A

DARLINGTON

1000

1

150 Cel

260

PNP

1.5 W

Other Transistors

YES

BSP60-E6433 by Infineon Technologies

BSP60-E6433

Infineon Technologies

PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 1000;

1 A

DARLINGTON

1000

e0

1

150 Cel

235

PNP

1.5 W

Other Transistors

YES

TIN LEAD

BSP51-E6327 by Infineon Technologies

BSP51-E6327

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

1 A

DARLINGTON

1000

1

150 Cel

260

NPN

1.5 W

Other Transistors

YES

SMBT3904U-E6327 by Infineon Technologies

SMBT3904U-E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;

.2 A

30

1

150 Cel

260

NPN

.33 W

Other Transistors

YES

300 MHz

SMBTA42-E6433 by Infineon Technologies

SMBTA42-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

25

1

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

50 MHz

SMBTA92-E6433 by Infineon Technologies

SMBTA92-E6433

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

25

1

1

150 Cel

260

PNP

.36 W

Other Transistors

YES

50 MHz

BFR182W-E6327 by Infineon Technologies

BFR182W-E6327

Infineon Technologies

BFR182W-E6327 by Infineon Technologies is an NPN transistor with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.25W, min DC current gain of 50, and nominal transition frequency of 6000MHz. Ideal for high-frequency amplification in electronic circuits with operating temperatures up to 150°C.

.035 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

6000 MHz

BFN38-E6327 by Infineon Technologies

BFN38-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 25;

.2 A

SINGLE

25

1

1

150 Cel

260

NPN

1.5 W

Other Transistors

YES

BSP92P-E6327 by Infineon Technologies

BSP92P-E6327

Infineon Technologies

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): .26 A;

SINGLE

.26 A

.26 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

255

P-CHANNEL

1.8 W

Other Transistors

YES

BSP315P-E6327 by Infineon Technologies

BSP315P-E6327

Infineon Technologies

BSP315P-E6327 by Infineon is a P-CHANNEL transistor with 1.17A max drain current and 1.8W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic devices requiring efficient power management in compact designs.

SINGLE

1.17 A

1.17 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

255

P-CHANNEL

1.8 W

Other Transistors

YES

BSP317P-E6327 by Infineon Technologies

BSP317P-E6327

Infineon Technologies

BSP317P-E6327 by Infineon is a P-CHANNEL transistor with max drain current of 0.43A and power dissipation of 1.8W. It operates in enhancement mode, suitable for surface mount applications in temperatures up to 150°C. Ideal for compact electronic devices requiring efficient power management.

SINGLE

.43 A

.43 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

255

P-CHANNEL

1.8 W

Other Transistors

YES

BSP316P-E6327 by Infineon Technologies

BSP316P-E6327

Infineon Technologies

BSP316P-E6327 by Infineon is a P-CHANNEL transistor with max drain current of 0.68A and power dissipation of 1.8W. Ideal for enhancement mode operation in applications requiring high temperature tolerance up to 150°C, such as power management systems and automotive electronics.

SINGLE

.68 A

.68 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

235

P-CHANNEL

1.8 W

Other Transistors

YES

BFR705L3RH-E6327 by Infineon Technologies

BFR705L3RH-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .04 W; Maximum Collector Current (IC): .01 A; Maximum Operating Temperature: 150 Cel;

.01 A

SINGLE

160

1

1

150 Cel

260

NPN

.04 W

Other Transistors

YES

BC818K-25-E6327 by Infineon Technologies

BC818K-25-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1;

.5 A

SINGLE

160

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

BC818K-40-E6327 by Infineon Technologies

BC818K-40-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1;

.5 A

SINGLE

250

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

BC817K-25W-E6433 by Infineon Technologies

BC817K-25W-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

SINGLE

160

1

150 Cel

NPN

.25 W

Other Transistors

YES

BC856S-E6433 by Infineon Technologies

BC856S-E6433

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 200;

.1 A

200

150 Cel

PNP

.25 W

Other Transistors

YES

BC858BL3-E6327 by Infineon Technologies

BC858BL3-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

SINGLE

220

1

1

150 Cel

260

PNP

.25 W

Other Transistors

YES

BC847BF-E6327 by Infineon Technologies

BC847BF-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200;

.1 A

SINGLE

200

1

150 Cel

NPN

.25 W

Other Transistors

YES

BFP540FESD-E6327 by Infineon Technologies

BFP540FESD-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

21000 MHz

BFP196R-E6327 by Infineon Technologies

BFP196R-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .7 W; Maximum Collector Current (IC): .15 A;

.15 A

SINGLE

70

1

150 Cel

NPN

.7 W

Other Transistors

YES

5000 MHz

BCX5416H6327XTSA1 by Infineon Technologies

BCX5416H6327XTSA1

Infineon Technologies

Infineon BCX5416H6327XTSA1 is an NPN transistor with max. power dissipation of 2W, min. DC current gain of 100, and max. collector current of 1A. Ideal for surface mount applications in electronics due to its single configuration and operating temp up to 150°C.

1 A

SINGLE

100

e3

1

1

150 Cel

245

NPN

2 W

Other Transistors

YES

TIN

BCX55H6327XTSA1 by Infineon Technologies

BCX55H6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; JESD-609 Code: e3;

1 A

SINGLE

40

e3

1

1

150 Cel

NPN

2 W

Other Transistors

YES

TIN

BCX56H6327XTSA1 by Infineon Technologies

BCX56H6327XTSA1

Infineon Technologies

BCX56H6327XTSA1 by Infineon Technologies is an NPN transistor with a single configuration, suitable for surface mount applications. It offers a max power dissipation of 2W, min DC current gain of 40 (hFE), and can operate at temperatures up to 150°C. Ideal for low-power electronic circuits requiring a collector current of up to 1A.

1 A

SINGLE

40

e3

1

1

150 Cel

NPN

2 W

Other Transistors

YES

TIN

BCP5116H6433XTMA1 by Infineon Technologies

BCP5116H6433XTMA1

Infineon Technologies

Infineon's BCP5116H6433XTMA1 is a PNP transistor with max power dissipation of 2W, hFE of 100, and IC of 1A. Ideal for surface mount applications in electronics due to its single configuration and operating temp up to 150°C.

1 A

SINGLE

100

1

1

150 Cel

PNP

2 W

Other Transistors

YES

BC857BTE6327 by Infineon Technologies

BC857BTE6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;

.1 A

SINGLE

220

1

1

150 Cel

260

PNP

.25 W

Other Transistors

YES

BSS83PE6327 by Infineon Technologies

BSS83PE6327

Infineon Technologies

BSS83PE6327 by Infineon is a P-CHANNEL transistor with a max drain current of 0.33A and power dissipation of 0.36W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C. This surface-mount transistor utilizes metal-oxide semiconductor technology, making it ideal for various electronic circuits.

SINGLE

.33 A

.33 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.36 W

Other Transistors

YES

BC847BTE6327 by Infineon Technologies

BC847BTE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

SINGLE

200

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

BFS460L6E6327 by Infineon Technologies

BFS460L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 16000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Moisture Sensitivity Level (MSL): 1;

.05 A

90

1

150 Cel

260

NPN

.2 W

Other Transistors

YES

16000 MHz

BFS469L6E6327 by Infineon Technologies

BFS469L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 16000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Maximum Operating Temperature: 150 Cel;

.07 A

100

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

16000 MHz

BFP540FE6327 by Infineon Technologies

BFP540FE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

21000 MHz

BFS466L6E6327 by Infineon Technologies

BFS466L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A; Peak Reflow Temperature (C): 260;

.035 A

90

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

11000 MHz

BFR360TE6327 by Infineon Technologies

BFR360TE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

60

1

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

10000 MHz