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N-CHANNEL Other Function Transistors 18

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
2N5952-D74Z by Fairchild Semiconductor

2N5952-D74Z

Fairchild Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; Field Effect Transistor Technology: JUNCTION;

JUNCTION

e3

150 Cel

N-CHANNEL

.35 W

Other Transistors

NO

Matte Tin (Sn)

2N4338-E3 by Vishay Intertechnology

2N4338-E3

Vishay Intertechnology

Vishay Intertechnology's 2N4338-E3 is an N-CHANNEL transistor with a max power dissipation of 0.3W and max operating temp of 200°C. It utilizes JUNCTION technology, has matte tin terminal finish, and can withstand peak reflow temp of 260°C. Ideal for various electronic applications requiring high temperature resistance.

JUNCTION

e3

1

200 Cel

260

N-CHANNEL

.3 W

Other Transistors

NO

MATTE TIN

40

2N4339-E3 by Vishay Intertechnology

2N4339-E3

Vishay Intertechnology

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 200 Cel;

JUNCTION

e3

1

200 Cel

N-CHANNEL

.3 W

Other Transistors

NO

Matte Tin (Sn)

NE651R479A-A by Renesas Electronics

NE651R479A-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;

JUNCTION

150 Cel

N-CHANNEL

2.5 W

Other Transistors

YES

BF245A,126 by NXP Semiconductors

BF245A,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);

JUNCTION

e3

150 Cel

N-CHANNEL

.3 W

Other Transistors

NO

Matte Tin (Sn)

BF512,235 by NXP Semiconductors

BF512,235

NXP Semiconductors

BF512,235 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.25 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.25 W

Other Transistors

YES

TIN

30

BF861B,235 by NXP Semiconductors

BF861B,235

NXP Semiconductors

The NXP Semiconductors BF861B,235 is an N-CHANNEL junction field effect transistor (JFET) with a max power dissipation of 0.25W and a max operating temperature of 150°C. It is surface mountable and has a matte tin terminal finish. This transistor can be used in various applications requiring low noise amplification or switching functions.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.25 W

Other Transistors

YES

MATTE TIN

BFR30,235 by NXP Semiconductors

BFR30,235

NXP Semiconductors

BFR30,235 by NXP Semiconductors is an N-channel FET designed for surface mount applications. It features a max power dissipation of 0.3 W and operates at temperatures up to 150 °C. Ideal for various electronic circuits, it ensures reliable performance in demanding environments.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.3 W

Other Transistors

YES

TIN

30

BFR31,235 by NXP Semiconductors

BFR31,235

NXP Semiconductors

BFR31,235 by NXP Semiconductors is an N-CHANNEL transistor with a max power dissipation of 0.3W and a max operating temperature of 150°C. It is surface mountable and commonly used in various electronic applications.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.3 W

Other Transistors

YES

TIN

30

BF556A,235 by NXP Semiconductors

BF556A,235

NXP Semiconductors

BF556A,235 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.25 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.25 W

Other Transistors

YES

TIN

30

BF862,235 by NXP Semiconductors

BF862,235

NXP Semiconductors

NXP Semiconductors' BF862,235 is an N-CHANNEL JUNCTION FET with 0.225W power dissipation and 150°C max operating temp. It's surface-mountable with TIN terminal finish, ideal for high-frequency applications in RF amplifiers and mixers.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.225 W

Other Transistors

YES

TIN

30

EC3A03B-TL-H by Onsemi

EC3A03B-TL-H

Onsemi

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;

JUNCTION

1

150 Cel

N-CHANNEL

.1 W

Other Transistors

YES

EC3A04B-3-TL-H by Onsemi

EC3A04B-3-TL-H

Onsemi

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;

JUNCTION

1

150 Cel

N-CHANNEL

.1 W

Other Transistors

YES

NE3520S03-A by Renesas Electronics

NE3520S03-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 125 Cel;

JUNCTION

125 Cel

N-CHANNEL

.165 W

Other Transistors

YES

NE3513M04-A by Renesas Electronics

NE3513M04-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Operating Temperature: 125 Cel; Field Effect Transistor Technology: JUNCTION;

JUNCTION

125 Cel

N-CHANNEL

.125 W

Other Transistors

YES

J108,126 by NXP Semiconductors

J108,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;

JUNCTION

150 Cel

N-CHANNEL

.4 W

Other Transistors

NO

J110,126 by NXP Semiconductors

J110,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel;

JUNCTION

150 Cel

N-CHANNEL

.4 W

Other Transistors

NO

J111,126 by NXP Semiconductors

J111,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel;

JUNCTION

150 Cel

N-CHANNEL

.4 W

Other Transistors

NO