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2 W Other Function Transistors 10

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
SI3443DVTRPBF by International Rectifier

SI3443DVTRPBF

International Rectifier

SI3443DVTRPBF by International Rectifier is a P-CHANNEL FET with 4.4A max drain current and 2W power dissipation. Ideal for applications requiring single configuration, such as power management systems operating at up to 150°C.

SINGLE

4.4 A

4.4 A

METAL-OXIDE SEMICONDUCTOR

e3

2

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

2 W

Other Transistors

YES

MATTE TIN

30

AO6405L by Alpha & Omega Semiconductor

AO6405L

Alpha & Omega Semiconductor

AO6405L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 5A max drain current and 2W power dissipation. Ideal for applications requiring single configuration, enhancement mode operation, and surface mount compatibility.

SINGLE

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

2 W

Other Transistors

YES

SP8M3FU6TB by ROHM

SP8M3FU6TB

ROHM

ROHM SP8M3FU6TB is a N/P-channel MOSFET with 5A max drain current and 2W max power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring efficient power management.

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

150 Cel

N-CHANNEL AND P-CHANNEL

2 W

Other Transistors

YES

RSS060P05FU6TB by ROHM

RSS060P05FU6TB

ROHM

ROHM's RSS060P05FU6TB is a P-CHANNEL MOSFET with 6A max drain current and 2W power dissipation. Ideal for enhancement mode operation in surface mount applications up to 150°C, making it suitable for various electronic devices requiring high power efficiency.

SINGLE

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

2 W

Other Transistors

YES

10

NE461M02-T1-AZ by Renesas Electronics

NE461M02-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .25 A; No. of Elements: 1;

.25 A

SINGLE

40

1

150 Cel

NPN

2 W

Other Transistors

YES

2SC4942-T1-AZ by Renesas Electronics

2SC4942-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

1 A

SINGLE

30

1

150 Cel

NPN

2 W

Other Transistors

YES

BCX5416H6327XTSA1 by Infineon Technologies

BCX5416H6327XTSA1

Infineon Technologies

Infineon BCX5416H6327XTSA1 is an NPN transistor with max. power dissipation of 2W, min. DC current gain of 100, and max. collector current of 1A. Ideal for surface mount applications in electronics due to its single configuration and operating temp up to 150°C.

1 A

SINGLE

100

e3

1

1

150 Cel

245

NPN

2 W

Other Transistors

YES

TIN

BCX55H6327XTSA1 by Infineon Technologies

BCX55H6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; JESD-609 Code: e3;

1 A

SINGLE

40

e3

1

1

150 Cel

NPN

2 W

Other Transistors

YES

TIN

BCX56H6327XTSA1 by Infineon Technologies

BCX56H6327XTSA1

Infineon Technologies

BCX56H6327XTSA1 by Infineon Technologies is an NPN transistor with a single configuration, suitable for surface mount applications. It offers a max power dissipation of 2W, min DC current gain of 40 (hFE), and can operate at temperatures up to 150°C. Ideal for low-power electronic circuits requiring a collector current of up to 1A.

1 A

SINGLE

40

e3

1

1

150 Cel

NPN

2 W

Other Transistors

YES

TIN

BCP5116H6433XTMA1 by Infineon Technologies

BCP5116H6433XTMA1

Infineon Technologies

Infineon's BCP5116H6433XTMA1 is a PNP transistor with max power dissipation of 2W, hFE of 100, and IC of 1A. Ideal for surface mount applications in electronics due to its single configuration and operating temp up to 150°C.

1 A

SINGLE

100

1

1

150 Cel

PNP

2 W

Other Transistors

YES