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.25 W Other Function Transistors 16

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BC857BF-E6327 by Infineon Technologies

BC857BF-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 220;

.1 A

SINGLE

220

1

150 Cel

PNP

.25 W

Other Transistors

YES

BC860BF-E6327 by Infineon Technologies

BC860BF-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

.1 A

SINGLE

220

1

150 Cel

PNP

.25 W

Other Transistors

YES

BFR182W-E6327 by Infineon Technologies

BFR182W-E6327

Infineon Technologies

BFR182W-E6327 by Infineon Technologies is an NPN transistor with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.25W, min DC current gain of 50, and nominal transition frequency of 6000MHz. Ideal for high-frequency amplification in electronic circuits with operating temperatures up to 150°C.

.035 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

6000 MHz

BC817K-25W-E6433 by Infineon Technologies

BC817K-25W-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

SINGLE

160

1

150 Cel

NPN

.25 W

Other Transistors

YES

BC856S-E6433 by Infineon Technologies

BC856S-E6433

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 200;

.1 A

200

150 Cel

PNP

.25 W

Other Transistors

YES

BC858BL3-E6327 by Infineon Technologies

BC858BL3-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

SINGLE

220

1

1

150 Cel

260

PNP

.25 W

Other Transistors

YES

BC847BF-E6327 by Infineon Technologies

BC847BF-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200;

.1 A

SINGLE

200

1

150 Cel

NPN

.25 W

Other Transistors

YES

BFP540FESD-E6327 by Infineon Technologies

BFP540FESD-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

21000 MHz

BF512,235 by NXP Semiconductors

BF512,235

NXP Semiconductors

BF512,235 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.25 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.25 W

Other Transistors

YES

TIN

30

BF861B,235 by NXP Semiconductors

BF861B,235

NXP Semiconductors

The NXP Semiconductors BF861B,235 is an N-CHANNEL junction field effect transistor (JFET) with a max power dissipation of 0.25W and a max operating temperature of 150°C. It is surface mountable and has a matte tin terminal finish. This transistor can be used in various applications requiring low noise amplification or switching functions.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.25 W

Other Transistors

YES

MATTE TIN

BF556A,235 by NXP Semiconductors

BF556A,235

NXP Semiconductors

BF556A,235 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.25 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.25 W

Other Transistors

YES

TIN

30

5HP01C-TB-H by Onsemi

5HP01C-TB-H

Onsemi

5HP01C-TB-H by Onsemi is a P-CHANNEL transistor with 0.07A max drain current and 0.25W power dissipation. Ideal for applications requiring single configuration, such as enhancement mode operation in surface mount setups.

SINGLE

.07 A

.07 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.25 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

BC857BTE6327 by Infineon Technologies

BC857BTE6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;

.1 A

SINGLE

220

1

1

150 Cel

260

PNP

.25 W

Other Transistors

YES

BC847BTE6327 by Infineon Technologies

BC847BTE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

SINGLE

200

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

BFS469L6E6327 by Infineon Technologies

BFS469L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 16000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Maximum Operating Temperature: 150 Cel;

.07 A

100

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

16000 MHz

BFP540FE6327 by Infineon Technologies

BFP540FE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

21000 MHz