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.07 A Other Function Transistors 7

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BFG520,235 by NXP Semiconductors

BFG520,235

NXP Semiconductors

BFG520,235 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Perfect for RF amplification in compact devices.

.07 A

SINGLE

60

e3

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFG520/X,235 by NXP Semiconductors

BFG520/X,235

NXP Semiconductors

BFG520/X,235 by NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Its surface mount design ensures efficient integration in compact circuits.

.07 A

SINGLE

60

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

BFG520/XR,235 by NXP Semiconductors

BFG520/XR,235

NXP Semiconductors

BFG520/XR,235 from NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Its surface mount design enhances versatility in electronic circuits.

.07 A

SINGLE

60

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

BFR520,235 by NXP Semiconductors

BFR520,235

NXP Semiconductors

NXP Semiconductors' BFR520,235 is an NPN transistor with a single configuration and surface-mount capability. It features a max power dissipation of 0.3W, min DC current gain of 60, and max operating temp of 150°C. Ideal for applications requiring low collector current such as signal amplification in electronic circuits.

.07 A

SINGLE

60

e3

1

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFS520,135 by NXP Semiconductors

BFS520,135

NXP Semiconductors

BFS520,135 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 60, and operates up to 150 °C. Perfect for efficient signal amplification in compact designs.

.07 A

SINGLE

60

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

EC3H02BA-TL-H by Onsemi

EC3H02BA-TL-H

Onsemi

EC3H02BA-TL-H by Onsemi is an NPN transistor with a single configuration, suitable for surface mount applications. It features a min DC current gain of 120 (hFE), max collector current of 0.07A (IC), and nominal transition frequency of 5000MHz (fT). Ideal for high-frequency circuit designs requiring low power dissipation up to 0.1W at temperatures up to 150 °C.

.07 A

SINGLE

120

1

1

150 Cel

NPN

.1 W

Other Transistors

YES

5000 MHz

BFS469L6E6327 by Infineon Technologies

BFS469L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 16000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Maximum Operating Temperature: 150 Cel;

.07 A

100

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

16000 MHz