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.05 A Other Function Transistors 8

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
NE677M04-T2-A by Renesas Electronics

NE677M04-T2-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .205 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1;

.05 A

SINGLE

75

1

150 Cel

NPN

.205 W

Other Transistors

YES

BFG67,235 by NXP Semiconductors

BFG67,235

NXP Semiconductors

BFG67,235 by NXP Semiconductors is an NPN single transistor ideal for high-frequency applications with a nominal transition frequency of 7500 MHz. It supports a max collector current of 50 mA and operates up to 175 °C. This surface-mount device excels in RF amplification tasks.

.05 A

SINGLE

60

e3

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

7500 MHz

BFQ67W,135 by NXP Semiconductors

BFQ67W,135

NXP Semiconductors

BFQ67W,135 by NXP Semiconductors is a single NPN transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, hFE of 60, and operates up to 150 °C. This versatile component is perfect for various electronic circuits requiring efficient signal amplification.

.05 A

SINGLE

60

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFS17W,135 by NXP Semiconductors

BFS17W,135

NXP Semiconductors

NXP Semiconductors' BFS17W,135 is an NPN transistor with a max power dissipation of 0.3W and fT of 1600MHz. Ideal for applications requiring a single configuration, such as surface-mount designs in electronics operating up to 150°C with a collector current of 0.05A.

.05 A

SINGLE

25

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

1600 MHz

PBR941B,215 by NXP Semiconductors

PBR941B,215

NXP Semiconductors

PBR941B,215 from NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.36W, a min DC current gain (hFE) of 100, and operates up to 150 °C. Ideal for high-frequency circuits with a transition frequency of 7000 MHz.

.05 A

SINGLE

100

e3

1

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

TIN

30

7000 MHz

2SC3138-Y(TE85L,F) by Toshiba

2SC3138-Y(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;

.05 A

SINGLE

120

1

125 Cel

NPN

.15 W

Other Transistors

YES

50 MHz

BF357 by Texas Instruments

BF357

Texas Instruments

Texas Instruments' BF357 NPN transistor has a max power dissipation of 0.2W, operating temp of 150°C, and collector current of 0.05A. Ideal for applications requiring a single configuration such as amplifiers or signal processing circuits due to its nominal transition frequency of 1.6MHz.

.05 A

SINGLE

1

150 Cel

NPN

.2 W

Other Transistors

NO

1.6 MHz

BFS460L6E6327 by Infineon Technologies

BFS460L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 16000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Moisture Sensitivity Level (MSL): 1;

.05 A

90

1

150 Cel

260

NPN

.2 W

Other Transistors

YES

16000 MHz