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80 W Insulated Gate Bipolar Transistors (IGBT) 7

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGFW30NC60V by STMicroelectronics

STGFW30NC60V

STMicroelectronics

STMicroelectronics' STGFW30NC60V is an N-CHANNEL IGBT with 600V VCE, 36A IC, and 80W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.

36 A

600 V

5.75 V

20 V

150 Cel

N-CHANNEL

80 W

Insulated Gate BIP Transistors

NO

STGP7NB60HD by STMicroelectronics

STGP7NB60HD

STMicroelectronics

STGP7NB60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 14A max collector current, and 80W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 220ns.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

220 ns

63 ns

STGB7NB60HDT4 by STMicroelectronics

STGB7NB60HDT4

STMicroelectronics

STGB7NB60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 14A max collector current, and 80W max power dissipation. Ideal for motor control applications due to its built-in diode, fast turn-off time of 220ns, and small outline package style.

COLLECTOR

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

220 ns

63 ns

STGB14NC60KT4 by STMicroelectronics

STGB14NC60KT4

STMicroelectronics

STGB14NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 25 A collector current, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic systems.

25 A

600 V

SINGLE

6.5 V

20 V

R-PDSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

DUAL

POWER CONTROL

SILICON

340 ns

31.5 ns

STGB7NC60HDT4 by STMicroelectronics

STGB7NC60HDT4

STMicroelectronics

STGB7NC60HDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 25A collector current, and a fast turn-off time of 221ns. Ideal for high-performance switching in compact designs.

25 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

POWER CONTROL

SILICON

221 ns

25.5 ns

STGB10NB60ST4 by STMicroelectronics

STGB10NB60ST4

STMicroelectronics

STGB10NB60ST4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 29A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

29 A

600 V

SINGLE

5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

POWER CONTROL

SILICON

3100 ns

1160 ns

STGP7NC60H by STMicroelectronics

STGP7NC60H

STMicroelectronics

STGP7NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 25 A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

25 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

221 ns

25.5 ns