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714 W Insulated Gate Bipolar Transistors (IGBT) 7

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IGW100N60H3FKSA1 by Infineon Technologies

IGW100N60H3FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 140 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

140 A

600 V

SINGLE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

714 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

333 ns

72 ns

2.3 V

STGSB200M65DF2AG by STMicroelectronics

STGSB200M65DF2AG

STMicroelectronics

STGSB200M65DF2AG from STMicroelectronics is a high-performance N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05V, supports up to 216A collector current, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management and reliability.

ISOLATED

216 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PDSO-G9

1

9

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

714 W

AEC-Q101; UL RECOGNIZED

YES

GULL WING

DUAL

NOT SPECIFIED

POWER CONTROL

SILICON

412.6 ns

193.6 ns

2.05 V

NXH800A100L4Q2F2S1G by Onsemi

NXH800A100L4Q2F2S1G

Onsemi

NXH800A100L4Q2F2S1G by Onsemi is an N-CHANNEL IGBT with 1000V VCEsat, 309A IC, and 714W power dissipation. Ideal for POWER CONTROL applications due to its high voltage handling capacity and low saturation voltage. Suitable for complex configurations requiring precise control in industrial settings.

ISOLATED

309 A

1000 V

COMPLEX

6.7 V

20 V

R-XUFM-P17

4

17

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

714 W

NO

PIN/PEG

UPPER

POWER CONTROL

SILICON

1121.94 ns

223.8 ns

2.3 V

NXH800A100L4Q2F2S2G by Onsemi

NXH800A100L4Q2F2S2G

Onsemi

NXH800A100L4Q2F2S2G by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.3V, Max Collector-Emitter Voltage of 1000V, and Max Collector Current of 309A. This COMPLEX transistor has a Nominal Turn Off Time of 1121.94ns and operates b/w -40 to 175 °C temperature range.

ISOLATED

309 A

1000 V

COMPLEX

6.7 V

20 V

R-XUFM-P17

4

17

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

714 W

NO

PIN/PEG

UPPER

POWER CONTROL

SILICON

1121.94 ns

223.8 ns

2.3 V

IKQ100N60TAXKSA1 by Infineon Technologies

IKQ100N60TAXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 160 A; Maximum Collector-Emitter Voltage: 600 V;

160 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

714 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

393 ns

83 ns

2 V

AIKQ100N60CTXKSA1 by Infineon Technologies

AIKQ100N60CTXKSA1

Infineon Technologies

AIKQ100N60CTXKSA1 by Infineon is an N-CHANNEL IGBT with a VCEsat of 2V and IC of 160A. Ideal for power control applications, it has a toff of 393ns and ton of 83ns. With a max operating temperature of 175°C, it's designed for high-power dissipation up to 714W in automotive environments.

160 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

714 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

393 ns

83 ns

2 V

FS820R08A6P2BBPSA1 by Infineon Technologies

FS820R08A6P2BBPSA1

Infineon Technologies

Infineon's FS820R08A6P2BBPSA1 is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED, CENTER TAP configuration. It has 6 elements, 820 A IC, and 714 W power dissipation for POWER CONTROL applications. With VCEsat of 1.35V and toff of 1110ns, it operates b/w -40 to 150 °C effectively.

ISOLATED

820 A

750 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X33

6

33

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

714 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1110 ns

380 ns

1.35 V