Loading...

68 W Insulated Gate Bipolar Transistors (IGBT) 6

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGB3NB60KDT4 by STMicroelectronics

STGB3NB60KDT4

STMicroelectronics

STGB3NB60KDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 10A collector current, and fast switching times (ton: 19ns, toff: 220ns). Ideal for applications in energy conversion and motor drives.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

220 ns

19 ns

STGP3NB60KD by STMicroelectronics

STGP3NB60KD

STMicroelectronics

STGP3NB60KD by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 220ns, and can handle up to 68W dissipation. Ideal for high-performance switching in industrial systems.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

220 ns

19 ns

STGB3NB60FDT4 by STMicroelectronics

STGB3NB60FDT4

STMicroelectronics

STGB3NB60FDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and fast switching times (ton: 16.5ns, toff: 535ns). Its compact design ensures efficient performance in surface mount configurations.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

R-PSSO-G2

e0

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGP3NB60FD by STMicroelectronics

STGP3NB60FD

STMicroelectronics

STGP3NB60FD by STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGP3NB60F by STMicroelectronics

STGP3NB60F

STMicroelectronics

STGP3NB60F from STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 68 W, and operates at up to 150 °C. Its fast switching times (ton: 16.5 ns, toff: 535 ns) enhance efficiency in various systems.

6 A

600 V

SINGLE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGB4M65DF2 by STMicroelectronics

STGB4M65DF2

STMicroelectronics

STGB4M65DF2 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.1V, supports up to 68W power dissipation, and operates b/w -55 °C to 175 °C. Ideal for efficient switching in compact designs.

COLLECTOR

8 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

68 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

296 ns

19.6 ns

2.1 V