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333 W Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IHW30N110R3FKSA1 by Infineon Technologies

IHW30N110R3FKSA1

Infineon Technologies

IHW30N110R3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1100V and a max collector current of 60A. It has a nominal turn off time of 470ns, making it suitable for power control applications requiring high voltage and current handling capabilities. The package style is flange mount with through-hole terminals, ideal for power electronics designs where efficient heat dissipation is crucial.

60 A

1100 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

333 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

470 ns

FGH15T120SMD_F155 by Fairchild Semiconductor

FGH15T120SMD_F155

Fairchild Semiconductor

Fairchild Semiconductor's FGH15T120SMD_F155 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 333W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 534ns.

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.5 V

25 V

TO-247AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

333 W

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

534 ns

74 ns

FGH40T100SMD-F155 by Onsemi

FGH40T100SMD-F155

Onsemi

FGH40T100SMD-F155 by Onsemi is an N-CHANNEL IGBT with 1000V VCEsat, 80A IC, and 333W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.

COLLECTOR

80 A

1000 V

SINGLE WITH BUILT-IN DIODE

30 ns

6.5 V

20 V

TO-247AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

333 W

64 ns

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

397 ns

305 ns

100 ns

76 ns

2.3 V

AIKW50N60CTXKSA1 by Infineon Technologies

AIKW50N60CTXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 333 W; Maximum Collector Current (IC): 80 A; Terminal Form: THROUGH-HOLE;

80 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

333 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

396 ns

60 ns

2 V

FGH60T65SQD-F155 by Onsemi

FGH60T65SQD-F155

Onsemi

FGH60T65SQD-F155 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 120A, ideal for POWER CONTROL applications. Featuring a package style of FLANGE MOUNT, it has a max operating temperature of 175°C and collector-emitter voltage of 650V.

RC-IGBT

COLLECTOR

120 A

650 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247AB

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

333 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

126.2 ns

36.8 ns

2.1 V