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197 W Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
A1P25S12M3 by STMicroelectronics

A1P25S12M3

STMicroelectronics

A1P25S12M3 by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.45V, supports up to 197W dissipation, and operates b/w -40 °C to 150 °C. Ideal for complex applications requiring robust performance.

ISOLATED

25 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

197 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

326 ns

139 ns

2.45 V

A2C25S12M3-F by STMicroelectronics

A2C25S12M3-F

STMicroelectronics

STMicroelectronics A2C25S12M3-F is an N-CHANNEL IGBT for POWER CONTROL applications. With VCEsat of 2.45V, IC of 25A, and toff of 338ns, it offers efficient power management. Operating b/w -40°C to 150°C, this transistor has a max VCE of 1200V in a RECTANGULAR package with 35 terminals.

ISOLATED

25 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X35

7

35

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

197 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

338 ns

125.2 ns

2.45 V

A2C25S12M3 by STMicroelectronics

A2C25S12M3

STMicroelectronics

A2C25S12M3 by STMicroelectronics is an N-channel IGBT designed for motor control applications. It features a max VCEsat of 2.45V, 1200V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. Its robust design includes a bridge configuration with built-in diodes.

25 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

7 V

20 V

R-XUFM-X35

6

35

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

197 W

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

338 ns

125.2 ns

2.45 V

A1P25S12M3-F by STMicroelectronics

A1P25S12M3-F

STMicroelectronics

A1P25S12M3-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.45V, 197W power dissipation, and operates b/w -40 °C to 150 °C. Ideal for high-efficiency switching in industrial systems.

ISOLATED

25 A

1200 V

COMPLEX

7 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

197 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

326 ns

139 ns

2.45 V