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192 W Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NGTB20N120IHLWG by Onsemi

NGTB20N120IHLWG

Onsemi

NGTB20N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 40A max collector current, and 485ns nominal turn off time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.

COLLECTOR

40 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

192 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

485 ns

NGTB20N120LWG by Onsemi

NGTB20N120LWG

Onsemi

NGTB20N120LWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 40A. It has a nominal turn-off time of 485ns and is ideal for motor control applications due to its single configuration with built-in diode. The transistor operates at a max temperature of 150 °C, making it suitable for high-power applications.

COLLECTOR

40 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

192 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

485 ns

110 ns

NGTB25N120IHLWG by Onsemi

NGTB25N120IHLWG

Onsemi

NGTB25N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 475ns toff. Ideal for power control applications due to its 192W Pdiss, FLANGE MOUNT package style, and built-in diode configuration.

COLLECTOR

50 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

192 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

475 ns

NGTB25N120LWG by Onsemi

NGTB25N120LWG

Onsemi

NGTB25N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 50A max collector current, and 192W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 475ns.

COLLECTOR

50 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

192 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

475 ns

117 ns

NGTB25N120FLWG by Onsemi

NGTB25N120FLWG

Onsemi

NGTB25N120FLWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 192W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.

50 A

1200 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

192 W

Insulated Gate BIP Transistors

NO

TIN