Loading...

147 W Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGP20H65DFB2 by STMicroelectronics

STGP20H65DFB2

STMicroelectronics

STGP20H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 40A, and Ptot of 147W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 178ns and high collector-emitter voltage rating of 650V. Package style is FLANGE MOUNT with through-hole terminals.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

147 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

STGWA20HP65FB2 by STMicroelectronics

STGWA20HP65FB2

STMicroelectronics

STGWA20HP65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 40A collector current, and operates in temps from -55 °C to 175 °C. Ideal for high-performance applications like motor drives and power converters.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

147 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

178 ns

2.1 V

STGB20H65FB2 by STMicroelectronics

STGB20H65FB2

STMicroelectronics

STGB20H65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, 650V collector-emitter voltage, and operates at temperatures up to 175 °C. Ideal for high-performance applications in energy conversion systems.

COLLECTOR

40 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

147 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

STGP20H65FB2 by STMicroelectronics

STGP20H65FB2

STMicroelectronics

STGP20H65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.

COLLECTOR

40 A

650 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

147 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

STGB20H65DFB2 by STMicroelectronics

STGB20H65DFB2

STMicroelectronics

STGB20H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 40A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode functionality.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

147 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V