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6 A Insulated Gate Bipolar Transistors (IGBT) 11

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SIGC07T60SNCX1SA3 by Infineon Technologies

SIGC07T60SNCX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; JESD-30 Code: S-XUUC-N2; No. of Terminals: 2;

6 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

318 ns

41 ns

SGP02N60XKSA1 by Infineon Technologies

SGP02N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;

LOW CONDUCTION LOSS

COLLECTOR

6 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

354 ns

34 ns

SKB02N60ATMA1 by Infineon Technologies

SKB02N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW CONDUCTION LOSS;

LOW CONDUCTION LOSS

COLLECTOR

6 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

354 ns

34 ns

SIGC04T60EX1SA2 by Infineon Technologies

SIGC04T60EX1SA2

Infineon Technologies

N-CHANNEL; Maximum Collector Current (IC): 6 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

6 A

600 V

6.5 V

20 V

150 Cel

NOT SPECIFIED

N-CHANNEL

Insulated Gate BIP Transistors

NOT SPECIFIED

STGB3NB60SDT4 by STMicroelectronics

STGB3NB60SDT4

STMicroelectronics

STGB3NB60SDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 6A max collector current, and 70W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 4800ns.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

70 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

4800 ns

275 ns

STGB3NB60FDT4 by STMicroelectronics

STGB3NB60FDT4

STMicroelectronics

STGB3NB60FDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and fast switching times (ton: 16.5ns, toff: 535ns). Its compact design ensures efficient performance in surface mount configurations.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

R-PSSO-G2

e0

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

YES

TIN LEAD

GULL WING

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGP3NB60FD by STMicroelectronics

STGP3NB60FD

STMicroelectronics

STGP3NB60FD by STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 68W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGP3NB60F by STMicroelectronics

STGP3NB60F

STMicroelectronics

STGP3NB60F from STMicroelectronics is a robust N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 68 W, and operates at up to 150 °C. Its fast switching times (ton: 16.5 ns, toff: 535 ns) enhance efficiency in various systems.

6 A

600 V

SINGLE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

68 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

STGF3NB60FD by STMicroelectronics

STGF3NB60FD

STMicroelectronics

STGF3NB60FD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 25W, and a turn-off time of just 535ns. This robust device operates efficiently up to 150 °C.

ISOLATED

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

535 ns

16.5 ns

FGD3N60LSDTM-T by Onsemi

FGD3N60LSDTM-T

Onsemi

FGD3N60LSDTM-T by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.5V and a max IC of 6A. Ideal for MOTOR CONTROL applications, it has a turn-off time of 1420ns and operates at temperatures ranging from -55 to 150 °C.

LOW CONDUCTION LOSS

COLLECTOR

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

25 V

TO-252AA

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

40 W

YES

GULL WING

SINGLE

MOTOR CONTROL

SILICON

1420 ns

85 ns

1.5 V

IXGT6N170AHV-TRL by IXYS Corporation

IXGT6N170AHV-TRL

IXYS Corporation

IXGT6N170AHV-TRL by IXYS Corp is an N-CHANNEL IGBT with VCEsat of 7V, IC of 6A, and Pmax of 75W. Ideal for POWER CONTROL applications, it operates b/w -55 to 150 °C and features a fast turn-off time of 271ns.

COLLECTOR

6 A

1700 V

SINGLE

5 V

20 V

TO-268AA

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

75 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

271 ns

91 ns

7 V