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45 A Insulated Gate Bipolar Transistors (IGBT) 14

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSM35GP120GBOSA1 by Infineon Technologies

BSM35GP120GBOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 45 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 1200 V;

ISOLATED

45 A

1200 V

COMPLEX

R-XUFM-X35

e3

7

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

MATTE TIN

UNSPECIFIED

UPPER

SILICON

390 ns

105 ns

BSM25GP120BOSA1 by Infineon Technologies

BSM25GP120BOSA1

Infineon Technologies

Infineon's BSM25GP120BOSA1 is an N-CHANNEL IGBT with 7 elements, 1200V max collector-emitter voltage, and 45A max collector current. It has a toff of 420ns and ton of 90ns, suitable for applications requiring high power switching in complex configurations. The package style is flange mount with isolated case connection, ideal for industrial settings with temperatures up to 150°C.

ISOLATED

45 A

1200 V

COMPLEX

R-XUFM-X24

e3

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

MATTE TIN

UNSPECIFIED

UPPER

SILICON

420 ns

90 ns

BSM35GP120BOSA1 by Infineon Technologies

BSM35GP120BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 45 A; Terminal Position: UPPER; Nominal Turn On Time (ton): 105 ns;

ISOLATED

45 A

1200 V

COMPLEX

R-XUFM-X24

e3

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

MATTE TIN

UNSPECIFIED

UPPER

SILICON

390 ns

105 ns

FS25R12W1T4BOMA1 by Infineon Technologies

FS25R12W1T4BOMA1

Infineon Technologies

FS25R12W1T4BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 505ns, making it ideal for power control applications. With a max collector current of 45A and operating temperature of up to 175°C, this IGBT is designed for high-power industrial systems.

ISOLATED

45 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X23

6

23

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

505 ns

80 ns

FS30R06W1E3BOMA1 by Infineon Technologies

FS30R06W1E3BOMA1

Infineon Technologies

FS30R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, max. collector current of 45A, and turn off time of 355ns. It is used for power control applications, featuring a max operating temp. of 175°C and max. collector-emitter voltage of 600V in a rectangular package style with flange mount.

ISOLATED

45 A

600 V

COMPLEX

R-XUFM-X15

6

15

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

355 ns

52 ns

FS25R12W1T4B11BOMA1 by Infineon Technologies

FS25R12W1T4B11BOMA1

Infineon Technologies

Infineon FS25R12W1T4B11BOMA1 is an N-CHANNEL IGBT with 1200V VCE, 45A IC, and 205W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 505ns and UL approval. Operating from -40°C to 150°C, it features a complex configuration in a rectangular package with flange mount style.

ISOLATED

45 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

205 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

505 ns

80 ns

2.25 V

FS30R06W1E3B11BOMA1 by Infineon Technologies

FS30R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 45 A; Transistor Application: POWER CONTROL;

ISOLATED

45 A

600 V

COMPLEX

6.5 V

20 V

R-XUFM-X22

6

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

355 ns

52 ns

2 V

FS3L30R07W2H3FB11BPSA1 by Infineon Technologies

FS3L30R07W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 45 A; Nominal Turn Off Time (toff): 350 ns; Transistor Application: POWER CONTROL;

ISOLATED

45 A

650 V

COMPLEX

R-XUFM-X32

12

32

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

350 ns

88 ns

IXGR32N60CD1 by IXYS Corporation

IXGR32N60CD1

IXYS Corporation

IXGR32N60CD1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 45A max collector current, and 140W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 210ns.

FAST

ISOLATED

45 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

140 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

210 ns

50 ns

FGP30N6S2D by Fairchild Semiconductor

FGP30N6S2D

Fairchild Semiconductor

Fairchild Semiconductor's FGP30N6S2D is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 45A max collector current. It has a built-in diode, 100ns fall time, and 163ns turn off time. Ideal for power control applications with a max power dissipation of 167W at up to 150°C operating temperature.

LOW CONDUCTION LOSS

45 A

600 V

SINGLE WITH BUILT-IN DIODE

100 ns

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

167 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

163 ns

28 ns

FS3L30R07W2H3FB11BPSA2 by Infineon Technologies

FS3L30R07W2H3FB11BPSA2

Infineon Technologies

Infineon Technologies' FS3L30R07W2H3FB11BPSA2 is an N-CHANNEL IGBT with 12 elements, 32 terminals, and a max. collector-emitter voltage of 650V. It has a complex configuration for power control applications, offering a nominal turn-off time of 350ns and max. collector current of 45A. The transistor's silicon material and UL approval make it suitable for high-power systems requiring fast switching capabilities.

ISOLATED

45 A

650 V

COMPLEX

R-XUFM-X32

12

32

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

350 ns

88 ns

F3L75R12W1H3B11BPSA1 by Infineon Technologies

F3L75R12W1H3B11BPSA1

Infineon Technologies

Infineon's F3L75R12W1H3B11BPSA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring N-channel complex configuration with 4 elements, such as power electronics and motor drives.

ISOLATED

45 A

1200 V

COMPLEX

R-XUFM-X21

4

21

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

GENERAL PURPOSE

SILICON

385 ns

42 ns

F3L75R12W1H3B27BOMA1 by Infineon Technologies

F3L75R12W1H3B27BOMA1

Infineon Technologies

Infineon's F3L75R12W1H3B27BOMA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring high power switching such as motor drives and renewable energy systems.

ISOLATED

45 A

1200 V

COMPLEX

R-XUFM-X21

4

21

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

GENERAL PURPOSE

SILICON

385 ns

42 ns

F3L25R12W1T4B27BOMA1 by Infineon Technologies

F3L25R12W1T4B27BOMA1

Infineon Technologies

Infineon's F3L25R12W1T4B27BOMA1 IGBT features 1200V VCEsat, 375ns toff, and 215W power dissipation. Ideal for power control applications with N-CHANNEL polarity, it offers fast switching and high current handling capabilities in a complex configuration.

ISOLATED

45 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X19

4

19

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

215 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

375 ns

54 ns

2.25 V