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42 A Insulated Gate Bipolar Transistors (IGBT) 10

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGW19NC60WD by STMicroelectronics

STGW19NC60WD

STMicroelectronics

STGW19NC60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 42A collector current, and a fast turn-off time of 204ns. Ideal for high-performance switching in industrial systems.

42 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

204 ns

33 ns

STGW19NC60H by STMicroelectronics

STGW19NC60H

STMicroelectronics

STGW19NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 140 W power dissipation, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

42 A

600 V

SINGLE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

140 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

272 ns

32 ns

STGW19NC60W by STMicroelectronics

STGW19NC60W

STMicroelectronics

STGW19NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 140W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.

42 A

600 V

SINGLE

5.75 V

20 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

140 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

204 ns

33 ns

AFGHL30T65RQDN by Onsemi

AFGHL30T65RQDN

Onsemi

AFGHL30T65RQDN by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.82V and a max IC of 42A. It is designed for power control applications, featuring a single configuration with built-in diode. With a max operating temperature of 175 °C, it offers high power dissipation up to 230.8W in a rectangular package style suitable for flange mount installations.

COLLECTOR

42 A

650 V

SINGLE WITH BUILT-IN DIODE

6.3 V

20 V

TO-247

R-PSFM-T3

e3

1

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

230.8 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

POWER CONTROL

SILICON

139 ns

48 ns

1.82 V

IGP20N65F5XKSA1 by Infineon Technologies

IGP20N65F5XKSA1

Infineon Technologies

IGP20N65F5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 650V and a max collector current of 42A. It has a nominal turn-off time of 211ns and a turn-on time of 32ns, making it suitable for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.

COLLECTOR

42 A

650 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

211 ns

32 ns

IGP20N65H5XKSA1 by Infineon Technologies

IGP20N65H5XKSA1

Infineon Technologies

IGP20N65H5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 42A max collector current. It has a single configuration, through-hole terminals, and is ideal for power control applications. With a turn-off time of 218ns and turn-on time of 28ns, it offers efficient switching performance.

COLLECTOR

42 A

650 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

218 ns

28 ns

IKP20N65F5XKSA1 by Infineon Technologies

IKP20N65F5XKSA1

Infineon Technologies

IKP20N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 42A max collector current. It has a turn-off time of 211ns and turn-on time of 32ns, suitable for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.

COLLECTOR

42 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

211 ns

32 ns

IKP20N65H5XKSA1 by Infineon Technologies

IKP20N65H5XKSA1

Infineon Technologies

IKP20N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 650V and a Max Collector Current of 42A. It has a Nominal Turn Off Time of 218ns and Nominal Turn On Time of 28ns, making it ideal for POWER CONTROL applications. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals and built-in diode configuration.

COLLECTOR

42 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

218 ns

28 ns

NXH40T120L3Q1PG by Onsemi

NXH40T120L3Q1PG

Onsemi

Onsemi's NXH40T120L3Q1PG is an N-CHANNEL IGBT with 1200V VCEsat, 2.2V, and 42A IC. Ideal for POWER CONTROL applications due to its 146W power dissipation, -40 to 150 °C operating temp range, and fast switching times of 83ns turn on and 305ns turn off.

ISOLATED

42 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X44

12

44

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

146 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

305 ns

83 ns

2.2 V

NXH40T120L3Q1SG by Onsemi

NXH40T120L3Q1SG

Onsemi

NXH40T120L3Q1SG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 305ns toff, and 146W power dissipation. Ideal for POWER CONTROL applications, it features a max operating temperature of 150 °C and 42A IC.

ISOLATED

42 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X44

12

44

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

146 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

305 ns

83 ns

2.2 V