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160 A Insulated Gate Bipolar Transistors (IGBT) 11

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSM100GD120DLCBOSA1 by Infineon Technologies

BSM100GD120DLCBOSA1

Infineon Technologies

Infineon's BSM100GD120DLCBOSA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current of 160A, and turn-off time of 480ns. Ideal for high-power applications requiring fast switching such as motor drives and inverters.

ISOLATED

160 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X39

6

39

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

480 ns

110 ns

MG12100D-BA1MM by Littelfuse

MG12100D-BA1MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 160 A; Transistor Application: POWER CONTROL; Nominal Turn On Time (ton): 350 ns;

ISOLATED

160 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

7 V

20 V

R-XUFM-X7

2

7

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

615 ns

350 ns

SGL160N60UFTU by Fairchild Semiconductor

SGL160N60UFTU

Fairchild Semiconductor

SGL160N60UFTU by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 160A. It is designed for MOTOR CONTROL applications, featuring a Nominal Turn Off Time of 262ns and Max Power Dissipation of 250W.

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

160 A

600 V

SINGLE

150 ns

6.5 V

20 V

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

262 ns

150 ns

NGTB40N120FL2WAG by Onsemi

NGTB40N120FL2WAG

Onsemi

NGTB40N120FL2WAG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 536W power dissipation. Ideal for power control applications, it features a built-in diode, 360ns turn-off time, and -55 to 175 °C operating temperature range.

160 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T4

e3

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

536 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

360 ns

65 ns

2.4 V

NGTB40N120S3WG by Onsemi

NGTB40N120S3WG

Onsemi

NGTB40N120S3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 1.95V VCEsat. Ideal for POWER CONTROL applications due to its high power dissipation of 454W and operating temperature range of -55 to 175°C. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

160 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

454 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

1.95 V

IKQ100N60TXKSA1 by Infineon Technologies

IKQ100N60TXKSA1

Infineon Technologies

IKQ100N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 160A. It is designed for power control applications and has a nominal turn-off time of 393ns.

160 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

393 ns

83 ns

IKQ100N60TAXKSA1 by Infineon Technologies

IKQ100N60TAXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 160 A; Maximum Collector-Emitter Voltage: 600 V;

160 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

714 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

393 ns

83 ns

2 V

IKQ120N60TAXKSA1 by Infineon Technologies

IKQ120N60TAXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 833 W; Maximum Collector Current (IC): 160 A; JEDEC-95 Code: TO-247;

160 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

833 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

398 ns

84 ns

2 V

AIKQ100N60CTXKSA1 by Infineon Technologies

AIKQ100N60CTXKSA1

Infineon Technologies

AIKQ100N60CTXKSA1 by Infineon is an N-CHANNEL IGBT with a VCEsat of 2V and IC of 160A. Ideal for power control applications, it has a toff of 393ns and ton of 83ns. With a max operating temperature of 175°C, it's designed for high-power dissipation up to 714W in automotive environments.

160 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

714 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

393 ns

83 ns

2 V

AIKQ120N60CTXKSA1 by Infineon Technologies

AIKQ120N60CTXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 833 W; Maximum Collector Current (IC): 160 A; Nominal Turn On Time (ton): 84 ns;

160 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

833 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

398 ns

84 ns

2 V

FGH40T120SQDNL4 by Onsemi

FGH40T120SQDNL4

Onsemi

FGH40T120SQDNL4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.95V and a max collector-emitter voltage of 1200V. Ideal for power control applications, it has a nominal turn off time of 372ns and can handle a max collector current of 160A.

160 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

454 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

372 ns

80 ns

1.95 V