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16 A Insulated Gate Bipolar Transistors (IGBT) 16

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGD3NC120H-1 by STMicroelectronics

STGD3NC120H-1

STMicroelectronics

STGD3NC120H-1 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 16A IC, and 105W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 2.8V and fast turn-off time of 342ns. Package style is IN-LINE with through-hole terminals.

COLLECTOR

16 A

1200 V

SINGLE

5 V

20 V

TO-251

R-PSIP-T3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

105 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

342 ns

18.5 ns

2.8 V

IKW08T120FKSA1 by Infineon Technologies

IKW08T120FKSA1

Infineon Technologies

IKW08T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 16A. It has a nominal turn-off time of 710ns and nominal turn-on time of 66ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.

COLLECTOR

16 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

710 ns

66 ns

IGW08T120FKSA1 by Infineon Technologies

IGW08T120FKSA1

Infineon Technologies

IGW08T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 16A. It has a nominal turn-off time of 710ns and a turn-on time of 66ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 150°C.

COLLECTOR

16 A

1200 V

SINGLE

TO-247AD

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

710 ns

66 ns

FP10R06W1E3BOMA1 by Infineon Technologies

FP10R06W1E3BOMA1

Infineon Technologies

Infineon Technologies' FP10R06W1E3BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 600V, and max. current of 16A. Ideal for power control applications due to its fast turn on/off times (ton: 26ns, toff: 260ns) and operating temp up to 175°C in a rectangular package style.

ISOLATED

16 A

600 V

COMPLEX

R-XUFM-X23

7

23

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

260 ns

26 ns

FS10R06VE3BOMA1 by Infineon Technologies

FS10R06VE3BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; JESD-30 Code: R-XUFM-X13; Maximum Collector-Emitter Voltage: 600 V;

ISOLATED

16 A

600 V

COMPLEX

R-XUFM-X13

1

6

13

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

260 ns

26 ns

FS10R12VT3BOMA1 by Infineon Technologies

FS10R12VT3BOMA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 16 A; No. of Terminals: 11; JESD-30 Code: R-XUFM-X11;

ISOLATED

16 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X11

6

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

540 ns

62 ns

FS10R06VE3B2BOMA1 by Infineon Technologies

FS10R06VE3B2BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Transistor Application: POWER CONTROL; Nominal Turn Off Time (toff): 260 ns;

ISOLATED

16 A

600 V

COMPLEX

R-XUFM-X15

1

6

15

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

260 ns

26 ns

FP10R06W1E3B11BOMA1 by Infineon Technologies

FP10R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 600 V;

ISOLATED

16 A

600 V

COMPLEX

R-XUFM-X23

7

23

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

260 ns

26 ns

IHP10T120 by Infineon Technologies

IHP10T120

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 138 W; Maximum Collector Current (IC): 16 A; Nominal Turn Off Time (toff): 769 ns;

COLLECTOR

16 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

138 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

769 ns

69 ns

IXGT16N170AH1 by IXYS Corporation

IXGT16N170AH1

IXYS Corporation

IXGT16N170AH1 by IXYS Corp is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 16A max collector current, and 190W max power dissipation. Ideal for motor control applications due to its fast turn-off time of 330ns and built-in diode configuration.

COLLECTOR

16 A

1700 V

SINGLE WITH BUILT-IN DIODE

150 ns

5 V

20 V

TO-268AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

190 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

10

MOTOR CONTROL

SILICON

330 ns

97 ns

STGF19NC60HD by STMicroelectronics

STGF19NC60HD

STMicroelectronics

STGF19NC60HD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, a turn-off time of 272ns, and handles up to 16A current. Ideal for applications in industrial motor drives and power converters.

ISOLATED

16 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

35 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

272 ns

32 ns

FB10R06KL4BOMA1 by Infineon Technologies

FB10R06KL4BOMA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Package Shape: RECTANGULAR; No. of Terminals: 17;

ISOLATED

16 A

600 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X17

6

17

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

260 ns

60 ns

FP10R06KL4BOMA1 by Infineon Technologies

FP10R06KL4BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Terminal Form: UNSPECIFIED; Transistor Element Material: SILICON;

ISOLATED

16 A

600 V

COMPLEX

R-XUFM-X23

7

23

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

260 ns

60 ns

STGWA8M120DF3 by STMicroelectronics

STGWA8M120DF3

STMicroelectronics

STGWA8M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with low turn-off times.

COLLECTOR

16 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

356 ns

28.8 ns

2.3 V

FP10R12YT3B4BOMA1 by Infineon Technologies

FP10R12YT3B4BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 70 ns;

ISOLATED

16 A

1200 V

COMPLEX

R-XUFM-X23

7

23

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

SILICON

540 ns

70 ns

STGP8M120DF3 by STMicroelectronics

STGP8M120DF3

STMicroelectronics

STGP8M120DF3 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.3V, operates up to 175 °C, and supports 1200V with a collector current of 16A. Its compact design ensures efficient thermal management in various systems.

COLLECTOR

16 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

356 ns

28.8 ns

2.3 V