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SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Insulated Gate Bipolar Transistors (IGBT) 110

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FF450R17ME4PB11BOSA1 by Infineon Technologies

FF450R17ME4PB11BOSA1

Infineon Technologies

Infineon Technologies' FF450R17ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. Ideal for POWER CONTROL applications, it has a max voltage of 1700V, current of 600A, and turn-off time of 1600ns. With a package style of FLANGE MOUNT and operating temp up to 175°C, it offers efficient performance in various power control systems.

ISOLATED

600 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1600 ns

380 ns

FF600R12ME4B72BOSA1 by Infineon Technologies

FF600R12ME4B72BOSA1

Infineon Technologies

FF600R12ME4B72BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, making it ideal for POWER CONTROL applications. With a turn off time of 770ns and turn on time of 310ns, this rectangular package transistor operates at temperatures up to 175°C.

ISOLATED

995 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

770 ns

310 ns

FF600R12ME4B73BPSA1 by Infineon Technologies

FF600R12ME4B73BPSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 995 A; Transistor Element Material: SILICON; Transistor Application: POWER CONTROL;

ISOLATED

995 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

770 ns

310 ns

FF600R12ME4PB11BOSA1 by Infineon Technologies

FF600R12ME4PB11BOSA1

Infineon Technologies

Infineon's FF600R12ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring VCEsat of 2.1V and toff of 770ns. Ideal for POWER CONTROL applications, it operates up to 1200V at temperatures from -40°C to 150°C.

ISOLATED

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X11

2

11

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

770 ns

310 ns

2.1 V

FF600R17ME4PB11BOSA1 by Infineon Technologies

FF600R17ME4PB11BOSA1

Infineon Technologies

Infineon Technologies' FF600R17ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V and max current of 950A for POWER CONTROL applications. Featuring a toff of 980ns and ton of 320ns, this rectangular package transistor is ideal for high-power systems.

ISOLATED

950 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

980 ns

320 ns

FF900R12IE4VPBOSA1 by Infineon Technologies

FF900R12IE4VPBOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PUFM-X10; No. of Terminals: 10;

ISOLATED

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-PUFM-X10

2

10

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

940 ns

350 ns

FF1200R17IP5BPSA1 by Infineon Technologies

FF1200R17IP5BPSA1

Infineon Technologies

FF1200R17IP5BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1700V and Nominal Turn Off Time of 970ns, ideal for POWER CONTROL applications. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material, suitable for high-power systems requiring fast switching speeds.

ISOLATED

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-PUFM-X10

2

10

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

970 ns

460 ns

FF1800R17IP5PBPSA1 by Infineon Technologies

FF1800R17IP5PBPSA1

Infineon Technologies

FF1800R17IP5PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V and turn on time of 530ns. Ideal for power control applications due to its PLASTIC/EPOXY package and -40°C min operating temperature.

ISOLATED

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-PUFM-X14

2

14

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1060 ns

530 ns

FF1500R12IE5BPSA1 by Infineon Technologies

FF1500R12IE5BPSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel; Maximum Collector-Emitter Voltage: 1200 V;

ISOLATED

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.35 V

20 V

R-PUFM-X14

2

14

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

720 ns

460 ns

2.15 V

FF1500R17IP5BPSA1 by Infineon Technologies

FF1500R17IP5BPSA1

Infineon Technologies

FF1500R17IP5BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max VCEsat of 2.2V and can operate at temperatures up to 175°C. Ideal for power control applications due to its high collector-emitter voltage of 1700V and fast turn-off time of 970ns.

ISOLATED

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.25 V

20 V

R-PUFM-X14

2

14

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

970 ns

480 ns

2.2 V

CM225DX-24T by Mitsubishi Electric

CM225DX-24T

Mitsubishi Electric

Mitsubishi Electric's CM225DX-24T is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2V and can handle up to 225A IC for power control applications. With a package style of FLANGE MOUNT, it operates b/w -40 to 150 °C with UL recognition.

ISOLATED

225 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

400 ns

6.6 V

20 V

R-PUFM-X11

2

11

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1470 W

UL RECOGNIZED

200 ns

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1200 ns

800 ns

2 V

FF1500R17IP5PBPSA1 by Infineon Technologies

FF1500R17IP5PBPSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1500 A; Nominal Turn Off Time (toff): 970 ns; Terminal Form: UNSPECIFIED;

ISOLATED

1500 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.25 V

20 V

R-PUFM-X14

2

14

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

970 ns

480 ns

2.2 V

NXH450N65L4Q2F2SG by Onsemi

NXH450N65L4Q2F2SG

Onsemi

NXH450N65L4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 280A IC, and 633W power dissipation. Ideal for power control applications due to its series connected configuration with built-in diode and thermistor. Operating temperature ranges from -40 °C to 125°C making it suitable for various industrial uses.

ISOLATED

280 A

650 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

5.2 V

20 V

R-XUFM-X40

2

40

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

633 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

978 ns

192 ns

2.2 V

NXH450N65L4Q2F2PG by Onsemi

NXH450N65L4Q2F2PG

Onsemi

NXH450N65L4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.2V and can handle a collector current of up to 280A. Ideal for power control applications due to its high power dissipation capability of 633W and operating temperature range from -40 °C to 125°C.

ISOLATED

280 A

650 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

5.2 V

20 V

R-XUFM-X36

2

36

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

633 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

978 ns

192 ns

2.2 V