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Cypress Semiconductor SRAM 103

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CY7C1021BNL-15ZSXAT by Cypress Semiconductor

CY7C1021BNL-15ZSXAT

Cypress Semiconductor

CY7C1021BNL-15ZSXAT by Cypress is a 64KX16 SRAM with 3-STATE output, operating at 5V. It has a max access time of 15ns and industrial temperature grade. Commonly used in applications requiring fast and reliable memory storage in harsh environments.

15 ns

COMMON

R-PDSO-G44

1048576 bit

STANDARD SRAM

16

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

Not Qualified

AEC-Q100

.0005 Amp

4.5 V

SRAMs

130 mA

5

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

CY7C1520KV18-250BZIT by Cypress Semiconductor

CY7C1520KV18-250BZIT

Cypress Semiconductor

CY7C1520KV18-250BZIT by Cypress Semiconductor is a 2MX36 SRAM with synchronous operation and 250 MHz clock frequency. It features 3-STATE output, operates at -40 to 85 °C, and has a memory density of 75497472 bit. Ideal for industrial applications requiring fast parallel memory access.

.45 ns

250 MHz

COMMON

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

530 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

CY62147EV30LL-45B2XAT by Cypress Semiconductor

CY62147EV30LL-45B2XAT

Cypress Semiconductor

CY62147EV30LL-45B2XAT by Cypress Semiconductor is a 256Kx16 SRAM with 45 ns access time, operating at 2.5/3.3V. It features a grid array package style, suitable for industrial temperature grades. Ideal for applications requiring fast and reliable memory storage in electronic devices.

45 ns

COMMON

R-PBGA-B48

4194304 bit

STANDARD SRAM

16

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

.000007 Amp

1.5 V

SRAMs

20 mA

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

CY7C1041CV33-8ZSXI by Cypress Semiconductor

CY7C1041CV33-8ZSXI

Cypress Semiconductor

CY7C1041CV33-8ZSXI by Cypress Semiconductor is a 256Kx16 SRAM with 8ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and parallel interface. Ideal for high-speed memory applications in industrial environments.

8 ns

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.194 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY62177ESL-55ZXI by Cypress Semiconductor

CY62177ESL-55ZXI

Cypress Semiconductor

CY62177ESL-55ZXI by Cypress Semiconductor is a 2MX16 SRAM with 55 ns access time, operating at 3.6V. It features a small outline package, suitable for industrial applications requiring fast and reliable memory access in harsh environments. With 48 terminals and 16-bit memory width, it offers high-density storage in a compact form factor.

55 ns

ALSO OPERATES AT 5V SUPPLY

8

COMMON

R-PDSO-G48

e3

18.4 mm

33554432 bit

STANDARD SRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3,5

Not Qualified

1.2 mm

.000017 Amp

1.5 V

SRAMs

45 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

20

12 mm

CY7C1665KV18-450BZXC by Cypress Semiconductor

CY7C1665KV18-450BZXC

Cypress Semiconductor

CY7C1665KV18-450BZXC by Cypress Semiconductor is a 4MX36 QDR SRAM with 450 MHz clock frequency, 1.8V supply, and 0.45ns access time. Ideal for high-speed applications requiring fast data processing and low power consumption in commercial-grade environments.

.45 ns

450 MHz

SEPARATE

R-PBGA-B165

17 mm

150994944 bit

QDR SRAM

36

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.4 mm

.46 Amp

1.7 V

SRAMs

1290 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

15 mm

CY7C1021BN-15VXET by Cypress Semiconductor

CY7C1021BN-15VXET

Cypress Semiconductor

CY7C1021BN-15VXET by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time, operating at 5V. It features a small outline package and is suitable for automotive applications due to AEC-Q100 screening level. With common I/O type and 3-state output characteristics, it offers reliable memory storage in harsh environments.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

AEC-Q100

3.7592 mm

.015 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

CY7C1021BN-15ZSXET by Cypress Semiconductor

CY7C1021BN-15ZSXET

Cypress Semiconductor

CY7C1021BN-15ZSXET by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It is designed for automotive applications, featuring a small outline package and thin profile. The memory IC has a max standby current of 0.015A and offers 3-STATE output characteristics.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

AEC-Q100

1.194 mm

.015 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1041DV33-10BVIT by Cypress Semiconductor

CY7C1041DV33-10BVIT

Cypress Semiconductor

CY7C1041DV33-10BVIT by Cypress Semiconductor is a 256Kx16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast and reliable parallel memory storage in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e0

8 mm

4194304 bit

STANDARD SRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1 mm

.01 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

CY7C1041DV33-10BVJXIT by Cypress Semiconductor

CY7C1041DV33-10BVJXIT

Cypress Semiconductor

CY7C1041DV33-10BVJXIT by Cypress is a 256Kx16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast, common I/O asynchronous memory in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e1

8 mm

4194304 bit

STANDARD SRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1 mm

.01 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

20

6 mm

CY7C1049D-10VXIT by Cypress Semiconductor

CY7C1049D-10VXIT

Cypress Semiconductor

CY7C1049D-10VXIT by Cypress is a 512Kx8 SRAM with 10ns access time, operating at 5V. It features a small outline package and 3-state output, suitable for industrial applications requiring fast and reliable memory storage. With parallel interface and common I/O type, it offers high performance in a compact form factor.

10 ns

COMMON

R-PDSO-J36

e4

23.495 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ36,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1061DV33-10BVXIT by Cypress Semiconductor

CY7C1061DV33-10BVXIT

Cypress Semiconductor

CY7C1061DV33-10BVXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 175mA supply current. Ideal for industrial applications requiring fast and reliable parallel memory storage in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e1

9.5 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1 mm

.025 Amp

2 V

SRAMs

175 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

40

8 mm

CY7C1061DV33-10ZSXIT by Cypress Semiconductor

CY7C1061DV33-10ZSXIT

Cypress Semiconductor

CY7C1061DV33-10ZSXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 175mA max supply current. Ideal for industrial applications requiring high-speed memory operations in a compact thin profile package.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.025 Amp

2 V

SRAMs

175 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1069DV33-10ZSXIT by Cypress Semiconductor

CY7C1069DV33-10ZSXIT

Cypress Semiconductor

CY7C1069DV33-10ZSXIT by Cypress Semiconductor is a 3.3V SRAM with 2Mx8 organization, operating at -40 to 85°C. It features a fast access time of 10ns, ideal for industrial applications requiring high-speed memory solutions in a compact thin profile package.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

8

3

1

54

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.025 Amp

2 V

SRAMs

175 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C131-55JXCT by Cypress Semiconductor

CY7C131-55JXCT

Cypress Semiconductor

CY7C131-55JXCT by Cypress Semiconductor is a 1Kx8 SRAM with 55ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for commercial applications requiring fast memory access in a compact chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C1380D-167AXCT by Cypress Semiconductor

CY7C1380D-167AXCT

Cypress Semiconductor

CY7C1380D-167AXCT by Cypress Semiconductor is a 512Kx36 SRAM with synchronous operation and 3-STATE output. It operates at a max clock frequency of 167 MHz, suitable for applications requiring fast access times such as networking equipment and high-performance computing systems. With a low profile flatpack package style and common I/O type, it offers reliable performance in compact designs.

3.4 ns

PIPELINED ARCHITECTURE

167 MHz

COMMON

R-PQFP-G100

e3

20 mm

18874368 bit

STANDARD SRAM

36

3

1

100

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.07 Amp

SRAMs

275 mA

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

CY7C199CNL-15VXIT by Cypress Semiconductor

CY7C199CNL-15VXIT

Cypress Semiconductor

CY7C199CNL-15VXIT by Cypress Semiconductor is a 32Kx8 SRAM with 3-STATE output, operating at -40 to 85°C. It has a supply voltage of 4.5-5.5V and max access time of 15ns. Ideal for industrial applications requiring fast, asynchronous memory with common I/O type in small outline package.

15 ns

COMMON

R-PDSO-J28

e4

17.907 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.00015 Amp

2 V

SRAMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

30

7.5 mm

CY7C199D-10ZXIT by Cypress Semiconductor

CY7C199D-10ZXIT

Cypress Semiconductor

CY7C199D-10ZXIT by Cypress Semiconductor is a 32Kx8 SRAM with 10ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.

10 ns

COMMON

R-PDSO-G28

e4

11.8 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.003 Amp

2 V

SRAMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.55 mm

DUAL

30

8 mm

CY7C1061AV33-10ZXCT by Cypress Semiconductor

CY7C1061AV33-10ZXCT

Cypress Semiconductor

CY7C1061AV33-10ZXCT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, operating in asynchronous mode. It features 10ns access time, 70°C max temp, and 275mA supply current. Ideal for applications requiring fast memory access in commercial-grade devices.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.05 Amp

2 V

SRAMs

275 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1061AV33-10ZXIT by Cypress Semiconductor

CY7C1061AV33-10ZXIT

Cypress Semiconductor

CY7C1061AV33-10ZXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 16-bit memory width. Ideal for industrial applications requiring fast and reliable parallel memory operations in a compact package.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.05 Amp

2 V

SRAMs

275 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1347G-133AXCT by Cypress Semiconductor

CY7C1347G-133AXCT

Cypress Semiconductor

CY7C1347G-133AXCT by Cypress Semiconductor is a 128KX36 ZBT SRAM with 133 MHz clock frequency, 4 ns access time, and 3.3V supply voltage. Ideal for high-speed synchronous applications requiring fast memory access and low power consumption in commercial-grade environments.

4 ns

PIPELINED ARCHITECTURE

133 MHz

COMMON

R-PQFP-G100

e3

20 mm

4718592 bit

ZBT SRAM

36

3

1

100

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.04 Amp

3.14 V

SRAMs

225 mA

3.63 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

CY7C131E-15NXI by Cypress Semiconductor

CY7C131E-15NXI

Cypress Semiconductor

CY7C131E-15NXI by Cypress Semiconductor is a 1Kx8 SRAM with 15ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for industrial applications requiring fast memory access in a compact square package.

15 ns

COMMON

S-PQFP-G52

e3

10 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

260

5

Not Qualified

2.5 mm

.015 Amp

4.5 V

SRAMs

305 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10 mm

CY7C131E-55JXC by Cypress Semiconductor

CY7C131E-55JXC

Cypress Semiconductor

CY7C131E-55JXC by Cypress Semiconductor is a 1Kx8 SRAM chip with 55ns access time, operating at 5V. It features asynchronous mode, 3-state output, and common I/O type. Ideal for commercial applications requiring fast memory access in a compact square chip carrier package.

55 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C136E-25JXC by Cypress Semiconductor

CY7C136E-25JXC

Cypress Semiconductor

CY7C136E-25JXC by Cypress Semiconductor is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

19.1262 mm

CY7C136E-25NXC by Cypress Semiconductor

CY7C136E-25NXC

Cypress Semiconductor

CY7C136E-25NXC by Cypress Semiconductor is a 2Kx8 MULTI-PORT SRAM with 25 ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G52

e3

10 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

5

Not Qualified

2.5 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10 mm

CY62256NLL-55ZXIT by Cypress Semiconductor

CY62256NLL-55ZXIT

Cypress Semiconductor

CY62256NLL-55ZXIT by Cypress Semiconductor is a 32KX8 SRAM with a max access time of 55 ns. It operates asynchronously at a nominal voltage of 5V and has a small outline, thin profile package style. It is commonly used in industrial applications requiring high-speed memory storage.

55 ns

COMMON

R-PDSO-G28

e4

11.8 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.00001 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.55 mm

DUAL

30

8 mm

CY62256NLL-70SNXCT by Cypress Semiconductor

CY62256NLL-70SNXCT

Cypress Semiconductor

CY62256NLL-70SNXCT by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

70 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

.000005 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

20

7.5057 mm

CY7C1049DV33-10ZSXIT by Cypress Semiconductor

CY7C1049DV33-10ZSXIT

Cypress Semiconductor

CY7C1049DV33-10ZSXIT by Cypress Semiconductor is a 512Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a parallel interface, 10ns access time, and low standby current of 0.01Amp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

8

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.01 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CYD18S36V18-167BBAI by Cypress Semiconductor

CYD18S36V18-167BBAI

Cypress Semiconductor

CYD18S36V18-167BBAI by Cypress Semiconductor is a 512Kx36 MULTI-PORT SRAM with 167 MHz fCLK. Operating at -40 to 85 °C, it has a low profile GRID ARRAY package and consumes up to 780 mA at 1.5/1.8 Vsup. Ideal for industrial applications requiring fast access times and high memory density.

4 ns

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

167 MHz

COMMON

S-PBGA-B256

e0

17 mm

18874368 bit

MULTI-PORT SRAM

36

3

1

2

256

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA256,16X16,40

SQUARE

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8

Not Qualified

1.7 mm

.35 Amp

1.4 V

SRAMs

780 mA

1.58 V

1.42 V

1.5

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

17 mm

CY62256LL-70PC by Cypress Semiconductor

CY62256LL-70PC

Cypress Semiconductor

CY62256LL-70PC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast memory access in a rectangular package.

70 ns

COMMON

R-PDIP-T28

e0

36.322 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.000005 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

CY62256L-70SNC by Cypress Semiconductor

CY62256L-70SNC

Cypress Semiconductor

CY62256L-70SNC by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-STATE output characteristics. Ideal for commercial applications requiring fast memory access in a small outline package.

70 ns

COMMON

R-PDSO-G28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

1

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

2.794 mm

.00002 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

1.27 mm

DUAL

30

7.5057 mm

CY62256LL-70ZI by Cypress Semiconductor

CY62256LL-70ZI

Cypress Semiconductor

CY62256LL-70ZI by Cypress Semiconductor is a 32KX8 SRAM with 70 ns access time, operating at 5V. It features common I/O type, 3-STATE output characteristics, and GULL WING terminal form. Ideal for industrial applications requiring fast and reliable memory storage in a compact package.

70 ns

COMMON

R-PDSO-G28

e0

11.8 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

Not Qualified

1.2 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.55 mm

DUAL

8 mm

CY7C131-25JC by Cypress Semiconductor

CY7C131-25JC

Cypress Semiconductor

CY7C131-25JC by Cypress Semiconductor is a 1Kx8 SRAM with 25ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast memory access in commercial-grade environments.

25 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e0

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

YES

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

170 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

19.1262 mm

CY14MB256J2-SXI by Cypress Semiconductor

CY14MB256J2-SXI

Cypress Semiconductor

CY14MB256J2-SXI by Cypress Semiconductor is a 32Kx8 NON-VOLATILE SRAM with 262144-bit memory density. Operating at 3V, it features SYNCHRONOUS mode and SERIAL interface. Ideal for industrial applications, this SRAM has a small outline package and operates b/w -40 to 85°C.

R-PDSO-G8

e4

4.889 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

Not Qualified

1.727 mm

.00015 Amp

SRAMs

3 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.8985 mm

CY62147EV30LL-45B2XA by Cypress Semiconductor

CY62147EV30LL-45B2XA

Cypress Semiconductor

CY62147EV30LL-45B2XA by Cypress Semiconductor is a 256Kx16 SRAM with 3.6V max supply voltage, 45ns access time, and industrial temperature grade. It features a very thin profile grid array package for common asynchronous applications in parallel memory systems.

45 ns

COMMON

R-PBGA-B48

e1

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1 mm

.000007 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

CY7C09099V-12AC by Cypress Semiconductor

CY7C09099V-12AC

Cypress Semiconductor

CY7C09099V-12AC by Cypress Semiconductor is a 128KX8 MULTI-PORT SRAM with synchronous operation and 3.3V power supply. It is commonly used in applications requiring high-speed data storage and retrieval, such as networking equipment and telecommunications systems.

25 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

50 MHz

COMMON

S-PQFP-G100

e0

14 mm

1048576 bit

MULTI-PORT SRAM

8

3

1

2

100

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1.6 mm

.00025 Amp

3 V

SRAMs

205 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

14 mm

CY7C024AV-25AC by Cypress Semiconductor

CY7C024AV-25AC

Cypress Semiconductor

CY7C024AV-25AC by Cypress Semiconductor is a 4Kx16 SRAM with 3.3V supply, operating at 0-70°C. It features 25ns access time, 100 terminals in a square package, and is ideal for multi-port memory applications.

25 ns

COMMON

S-PQFP-G100

e0

14 mm

65536 bit

MULTI-PORT SRAM

16

3

1

2

100

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1.6 mm

.00005 Amp

2 V

SRAMs

165 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

14 mm

CY7C09349A-12AC by Cypress Semiconductor

CY7C09349A-12AC

Cypress Semiconductor

CY7C09349A-12AC by Cypress Semiconductor is a 4Kx18 SRAM with synchronous operation and 3-STATE output. It operates at 5V, has a max access time of 25ns, and is ideal for applications requiring multi-port memory solutions in commercial-grade environments.

25 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

COMMON

S-PQFP-G100

e0

14 mm

73728 bit

MULTI-PORT SRAM

18

1

2

100

4096 words

4K

SYNCHRONOUS

70 Cel

0 Cel

4KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

5

Not Qualified

1.6 mm

.0005 Amp

4.5 V

SRAMs

300 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

QUAD

14 mm

CY7C1041CV33-12ZSXE by Cypress Semiconductor

CY7C1041CV33-12ZSXE

Cypress Semiconductor

CY7C1041CV33-12ZSXE by Cypress Semiconductor is a 256KX16 SRAM with 3.3V supply, operating at -40 to 125 °C. It features 12 ns access time, 44 terminals in small outline package for automotive applications. With common I/O type and parallel technology, it offers 4194304 bit memory density.

12 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

SRAMs

120 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1020CV33-15ZSXET by Cypress Semiconductor

CY7C1020CV33-15ZSXET

Cypress Semiconductor

CY7C1020CV33-15ZSXET by Cypress Semiconductor is a 32KX16 SRAM with 3.3V supply, 15ns access time, and 44 terminals. Ideal for automotive applications due to AEC-Q100 screening level and small outline package. Operating in asynchronous mode, it offers common I/O type and 3-STATE output characteristics.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

524288 bit

STANDARD SRAM

16

3

1

44

32768 words

32K

ASYNCHRONOUS

125 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

.01 Amp

3 V

SRAMs

85 mA

3.63 V

2.97 V

3.3

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15ZXIT by Cypress Semiconductor

CY7C1021BN-15ZXIT

Cypress Semiconductor

CY7C1021BN-15ZXIT by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15VXIT by Cypress Semiconductor

CY7C1021BN-15VXIT

Cypress Semiconductor

CY7C1021BN-15VXIT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time. Operating at 5V, it features a small outline package and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

15 ns

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

3.7592 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

CY7C1019CV33-12ZXCT by Cypress Semiconductor

CY7C1019CV33-12ZXCT

Cypress Semiconductor

CY7C1019CV33-12ZXCT by Cypress: 128KX8 SRAM with 3.3V, 12ns access time, and 1.27mm terminal pitch. Ideal for commercial applications requiring fast, asynchronous memory operations in a small outline package.

12 ns

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C1021BN-15VXCT by Cypress Semiconductor

CY7C1021BN-15VXCT

Cypress Semiconductor

CY7C1021BN-15VXCT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time, operating at 5V. It is used in commercial applications, featuring a small outline package and J bend terminal form for surface mount assembly.

15 ns

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

3.7592 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

CY7C1518KV18-250BZXC by Cypress Semiconductor

CY7C1518KV18-250BZXC

Cypress Semiconductor

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 250 MHz;

.45 ns

PIPELINED ARCHITECTURE

250 MHz

COMMON

R-PBGA-B165

e1

15 mm

75497472 bit

DDR SRAM

18

3

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

1.5/1.8,1.8

Not Qualified

1.4 mm

1.7 V

SRAMs

430 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

20

13 mm

CY62256VNLL-70ZIT by Cypress Semiconductor

CY62256VNLL-70ZIT

Cypress Semiconductor

CY62256VNLL-70ZIT by Cypress is a 32Kx8 SRAM with 70ns access time, operating at 3V. It has a small outline package suitable for industrial applications. This CMOS memory IC offers parallel operation and 262144-bit memory density.

70 ns

R-PDSO-G28

11.8 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.55 mm

DUAL

8 mm

CY7C1480V33-200AXCT by Cypress Semiconductor

CY7C1480V33-200AXCT

Cypress Semiconductor

CY7C1480V33-200AXCT by Cypress Semiconductor is a 3.3V CACHE SRAM with 2MX36 organization, operating synchronously at 70°C. It has a memory density of 75497472 bit and offers fast access time of 3 ns. Ideal for applications requiring high-speed data storage in commercial-grade environments.

3 ns

PIPELINED ARCHITECTURE

R-PQFP-G100

e3/e4

20 mm

75497472 bit

CACHE SRAM

36

1

100

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

PLASTIC/EPOXY

LQFP

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

Not Qualified

1.6 mm

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN/NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

14 mm

CY7C1061BV33-8ZXI by Cypress Semiconductor

CY7C1061BV33-8ZXI

Cypress Semiconductor

CY7C1061BV33-8ZXI by Cypress Semiconductor is a 3.3V, 1MX16 SRAM with 8ns access time. It operates in industrial temperature range (-40 to 85°C) and has a memory density of 16777216 bits. Ideal for applications requiring fast parallel memory access in compact designs.

8 ns

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm