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Cypress Semiconductor SRAM 103

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CY14E256L-SZ35XI by Cypress Semiconductor

CY14E256L-SZ35XI

Cypress Semiconductor

CY14E256L-SZ35XI by Cypress Semiconductor is a 32Kx8 SRAM with 262144-bit memory density. Operating at 5V, it offers a max access time of 35ns and industrial temperature grade suitability. Ideal for applications requiring fast, non-volatile memory storage in compact designs.

35 ns

R-PDSO-G32

e3

20.726 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.54 mm

.0015 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

7.505 mm

CY7C1019CV33-10ZXCT by Cypress Semiconductor

CY7C1019CV33-10ZXCT

Cypress Semiconductor

CY7C1019CV33-10ZXCT by Cypress Semiconductor is a 128KX8 SRAM with 131072 words, operating at 3.3V. It has a max access time of 10 ns and is ideal for commercial applications requiring fast and reliable memory storage in a small outline package.

10 ns

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

10.16 mm

CY7C1021BL-15ZXIT by Cypress Semiconductor

CY7C1021BL-15ZXIT

Cypress Semiconductor

CY7C1021BL-15ZXIT by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It has a small outline, thin profile package and is suitable for industrial applications requiring fast and reliable parallel memory storage.

15 ns

R-PDSO-G44

18.415 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.194 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

CY6264-55SNXI by Cypress Semiconductor

CY6264-55SNXI

Cypress Semiconductor

CY6264-55SNXI by Cypress Semiconductor is an 8KX8 SRAM with a 55ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.

55 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

65536 bit

STANDARD SRAM

8

3

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

.03 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

20

7.5057 mm

CY7C1021BN-15VXE by Cypress Semiconductor

CY7C1021BN-15VXE

Cypress Semiconductor

CY7C1021BN-15VXE by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features a small outline package and is AEC-Q100 qualified for automotive applications. This asynchronous memory has 44 terminals, offers 3-STATE output characteristics, and supports common I/O type.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

AEC-Q100

3.7592 mm

.015 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1061AV33-10ZXC by Cypress Semiconductor

CY7C1061AV33-10ZXC

Cypress Semiconductor

CY7C1061AV33-10ZXC by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 275mA max supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.05 Amp

3 V

SRAMs

275 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C131E-55JXCT by Cypress Semiconductor

CY7C131E-55JXCT

Cypress Semiconductor

CY7C131E-55JXCT by Cypress Semiconductor is a 1Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a 3-STATE output and operates in ASYNCHRONOUS mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

55 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

19.1262 mm