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54 SRAM 23

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CY7C1061DV33-10ZSXIT by Cypress Semiconductor

CY7C1061DV33-10ZSXIT

Cypress Semiconductor

CY7C1061DV33-10ZSXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 175mA max supply current. Ideal for industrial applications requiring high-speed memory operations in a compact thin profile package.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.025 Amp

2 V

SRAMs

175 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1069DV33-10ZSXIT by Cypress Semiconductor

CY7C1069DV33-10ZSXIT

Cypress Semiconductor

CY7C1069DV33-10ZSXIT by Cypress Semiconductor is a 3.3V SRAM with 2Mx8 organization, operating at -40 to 85°C. It features a fast access time of 10ns, ideal for industrial applications requiring high-speed memory solutions in a compact thin profile package.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

8

3

1

54

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.025 Amp

2 V

SRAMs

175 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

MT45W2MW16BGB-708AT by Micron Technology

MT45W2MW16BGB-708AT

Micron Technology

SRAMs; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;

70 ns

COMMON

R-PBGA-B54

e3

33554432 bit

16

1

54

2097152 words

2M

105 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, FINE PITCH

1.8,1.8/3.3

Not Qualified

.00011 Amp

Other Memory ICs

35 mA

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.75 mm

BOTTOM

CY7C1061AV33-10ZXCT by Cypress Semiconductor

CY7C1061AV33-10ZXCT

Cypress Semiconductor

CY7C1061AV33-10ZXCT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, operating in asynchronous mode. It features 10ns access time, 70°C max temp, and 275mA supply current. Ideal for applications requiring fast memory access in commercial-grade devices.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.05 Amp

2 V

SRAMs

275 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1061AV33-10ZXIT by Cypress Semiconductor

CY7C1061AV33-10ZXIT

Cypress Semiconductor

CY7C1061AV33-10ZXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 16-bit memory width. Ideal for industrial applications requiring fast and reliable parallel memory operations in a compact package.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.05 Amp

2 V

SRAMs

275 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

W968D6DAGX7I by Winbond Electronics

W968D6DAGX7I

Winbond Electronics

Winbond Electronics' W968D6DAGX7I is a 16Mx16 SRAM with 1.8V supply, 70ns access time, and 3-STATE output. Ideal for industrial applications, it features a very thin profile grid array package with common I/O type and asynchronous operation mode.

70 ns

COMMON

R-PBGA-B54

8 mm

268435456 bit

PSEUDO STATIC RAM

16

1

1

54

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

YES

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

Not Qualified

1 mm

.0004 Amp

1.7 V

Other Memory ICs

40 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

MT45W2MW16BGB-701IT by Micron Technology

MT45W2MW16BGB-701IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

70 ns

SYNCHRONOUS BURST MODE ALSO POSSIBLE

COMMON

R-PBGA-B54

e1

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY

PARALLEL

260

1.8,1.8/3.3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

40 mA

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W8MW16BGX-856AT by Micron Technology

MT45W8MW16BGX-856AT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B54;

85 ns

R-PBGA-B54

e1

10 mm

134217728 bit

PSEUDO STATIC RAM

16

1

54

8388608 words

8M

ASYNCHRONOUS

105 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

Not Qualified

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

8 mm

CY7C1061BV33-8ZXI by Cypress Semiconductor

CY7C1061BV33-8ZXI

Cypress Semiconductor

CY7C1061BV33-8ZXI by Cypress Semiconductor is a 3.3V, 1MX16 SRAM with 8ns access time. It operates in industrial temperature range (-40 to 85°C) and has a memory density of 16777216 bits. Ideal for applications requiring fast parallel memory access in compact designs.

8 ns

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT45W2MW16BGB-701ITTR by Micron Technology

MT45W2MW16BGB-701ITTR

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B54;

70 ns

SYNCHRONOUS BURST MODE ALSO POSSIBLE

R-PBGA-B54

e1

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

Not Qualified

1 mm

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16BCGB-701ITTR by Micron Technology

MT45W4MW16BCGB-701ITTR

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B54;

70 ns

R-PBGA-B54

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

Not Qualified

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W4MW16BCGB-708WTTR by Micron Technology

MT45W4MW16BCGB-708WTTR

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

70 ns

R-PBGA-B54

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-30 Cel

4MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

Not Qualified

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W8MW16BGX-708WTTR by Micron Technology

MT45W8MW16BGX-708WTTR

Micron Technology

Micron Technology's MT45W8MW16BGX-708WTTR is a 8MX16 SRAM with 134217728 bit memory density. Operating at 1.8V, it offers a max access time of 70ns and features a parallel interface. Ideal for applications requiring fast and reliable data storage in compact electronic devices.

70 ns

R-PBGA-B54

e1

10 mm

134217728 bit

PSEUDO STATIC RAM

16

1

54

8388608 words

8M

ASYNCHRONOUS

85 Cel

-30 Cel

8MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

Not Qualified

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

8 mm

MT45W4MW16BFB-706WT by Micron Technology

MT45W4MW16BFB-706WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

70 ns

SYNCHRONOUS BURST MODE POSSIBLE

COMMON

R-PBGA-B54

e0

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

ASYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16BABB-706LWT by Micron Technology

MT45W2MW16BABB-706LWT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 8 mm;

70 ns

COMMON

R-PBGA-B54

e1

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00009 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16BAFB-706WT by Micron Technology

MT45W2MW16BAFB-706WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

70 ns

COMMON

R-PBGA-B54

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16BAFB-856WT by Micron Technology

MT45W2MW16BAFB-856WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -30 Cel;

85 ns

COMMON

R-PBGA-B54

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16BAFB-708WT by Micron Technology

MT45W2MW16BAFB-708WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

70 ns

COMMON

R-PBGA-B54

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W8MW16BGX-701IT by Micron Technology

MT45W8MW16BGX-701IT

Micron Technology

MT45W8MW16BGX-701IT by Micron Technology is a 1.8V SRAM with 8MX16 organization, operating in industrial temperature range. Featuring 3-STATE output and parallel interface, it offers 8388608 words memory density for applications requiring fast access time of 70ns.

70 ns

COMMON

R-PBGA-B54

e1

10 mm

134217728 bit

PSEUDO STATIC RAM

16

1

1

54

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

YES

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.0002 Amp

1.7 V

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

8 mm

MT45W1MW16BDGB-701IT by Micron Technology

MT45W1MW16BDGB-701IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 1MX16;

70 ns

SYNCHRONOUS BURST MODE ALSO POSSIBLE

COMMON

R-PBGA-B54

e1

8 mm

16777216 bit

PSEUDO STATIC RAM

16

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00007 Amp

1.7 V

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16BCGB-701WT by Micron Technology

MT45W4MW16BCGB-701WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

COMMON

R-PBGA-B54

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00014 Amp

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W4MW16BCGB-708WT by Micron Technology

MT45W4MW16BCGB-708WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

70 ns

COMMON

R-PBGA-B54

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00014 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

CY7C1061AV33-10ZXC by Cypress Semiconductor

CY7C1061AV33-10ZXC

Cypress Semiconductor

CY7C1061AV33-10ZXC by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 275mA max supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.05 Amp

3 V

SRAMs

275 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm