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36 SRAM 10

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
DS1270W-100-IND by Dallas Semiconductor

DS1270W-100-IND

Dallas Semiconductor

DS1270W-100-IND by Dallas Semiconductor is a 2MX8 NON-VOLATILE SRAM with 16777216 bit memory density. It operates at 3.3V, has a max access time of 100ns, and is designed for INDUSTRIAL applications requiring reliable data storage in harsh environments.

100 ns

R-PDIP-T36

e0

16777216 bit

NON-VOLATILE SRAM

8

36

2097152 words

2M

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

3.3

Not Qualified

.0002 Amp

SRAMs

50 mA

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

CY7C1049D-10VXIT by Cypress Semiconductor

CY7C1049D-10VXIT

Cypress Semiconductor

CY7C1049D-10VXIT by Cypress is a 512Kx8 SRAM with 10ns access time, operating at 5V. It features a small outline package and 3-state output, suitable for industrial applications requiring fast and reliable memory storage. With parallel interface and common I/O type, it offers high performance in a compact form factor.

10 ns

COMMON

R-PDSO-J36

e4

23.495 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ36,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

10.16 mm

AS7C34096A-12JINTR by Alliance Memory

AS7C34096A-12JINTR

Alliance Memory

Alliance Memory's AS7C34096A-12JINTR is a 512Kx8 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it offers parallel interface, small outline package style, and moisture sensitivity level of 3.

12 ns

R-PDSO-J36

e3/e6

23.495 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.7592 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

DUAL

10.16 mm

M48Z2M1Y-70PL1 by STMicroelectronics

M48Z2M1Y-70PL1

STMicroelectronics

M48Z2M1Y-70PL1 by STMicroelectronics is a 2MX8 SRAM with 16777216 bit memory density, operating at 5V. It features an access time of 70ns, output enable function, and operates in parallel mode. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

70 ns

R-PDIP-T36

e0

52.96 mm

16777216 bit

NON-VOLATILE SRAM

8

1

1

36

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

3-STATE

YES

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

9.52 mm

.008 Amp

SRAMs

140 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

AS6C4008-55BIN by Alliance Memory

AS6C4008-55BIN

Alliance Memory

Alliance Memory's AS6C4008-55BIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and common I/O type. Ideal for industrial applications requiring fast and reliable memory performance.

55 ns

COMMON

R-PBGA-B36

8 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA36,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3/5

Not Qualified

1.2 mm

.00003 Amp

2 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

M48Z2M1V-85PL1 by STMicroelectronics

M48Z2M1V-85PL1

STMicroelectronics

M48Z2M1V-85PL1 by STMicroelectronics is a 2Mx8 non-volatile SRAM with a max access time of 85 ns. It operates asynchronously at a supply voltage of 3.3V and supports temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention, it features a compact in-line package with 36 terminals.

85 ns

R-PDIP-T36

e0

52.96 mm

16777216 bit

NON-VOLATILE SRAM

8

1

36

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.001 Amp

SRAMs

70 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

IS63LV1024L-12BLI by Integrated Silicon Solution

IS63LV1024L-12BLI

Integrated Silicon Solution

IS63LV1024L-12BLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a thin profile grid array package and offers a fast access time of 12ns. Ideal for industrial applications requiring high-speed memory in compact form factors.

12 ns

COMMON

R-PBGA-B36

e1

10 mm

1048576 bit

STANDARD SRAM

8

3

1

36

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA36,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0015 Amp

2 V

SRAMs

100 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

8 mm

IS61LV5128AL-10KLI by Integrated Silicon Solution

IS61LV5128AL-10KLI

Integrated Silicon Solution

IS61LV5128AL-10KLI by Integrated Silicon Solution is a 512KX8 SRAM with 3.3V supply, 10ns access time, and 95mA max supply current. It's used in industrial applications requiring fast, common I/O asynchronous memory with 36 terminals and small outline package style.

10 ns

COMMON

R-PDSO-J36

e3

23.495 mm

4194304 bit

STANDARD SRAM

8

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ36,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.75 mm

.02 Amp

3.14 V

SRAMs

95 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

10.16 mm

CY7C1049D-10VXI by Cypress Semiconductor

CY7C1049D-10VXI

Cypress Semiconductor

CY7C1049D-10VXI by Cypress Semiconductor is a 512Kx8 SRAM with 10ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Widely used in industrial applications for its small outline package and parallel interface.

10 ns

COMMON

R-PDSO-J36

e4

23.495 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ36,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

10.16 mm

DS1270Y-70IND by Maxim Integrated

DS1270Y-70IND

Maxim Integrated

DS1270Y-70IND by Maxim Integrated is a 2MX8 SRAM with 2097152 words, 16777216 bit memory density, and 70 ns max access time. It operates in industrial temperature range (-40 to 85 °C) and is ideal for applications requiring non-volatile memory storage in microelectronic assemblies.

70 ns

5 YEAR DATA RETENTION

R-PDMA-P36

e0

16777216 bit

NON-VOLATILE SRAM MODULE

8

1

36

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

Not Qualified

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

PIN/PEG

DUAL