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DIP OTP ROM 61

OTP ROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width Write Protection
M27C1001-70B1 by STMicroelectronics

M27C1001-70B1

STMicroelectronics

M27C1001-70B1 by STMicroelectronics is a 128KX8 OTP ROM with 70 ns access time and 5V supply voltage. It features a 32-terminal IN-LINE package, suitable for applications requiring non-volatile memory storage in commercial temperature environments. With a memory density of 1048576 bit and parallel interface, it offers reliable data storage solutions.

70 ns

COMMON

R-PDIP-T32

e3

42.035 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C2001-10B1 by STMicroelectronics

M27C2001-10B1

STMicroelectronics

M27C2001-10B1 by STMicroelectronics is a 256KX8 OTP ROM with 3-STATE output, operating at 5V. It features a max access time of 100ns and memory density of 2097152 bits. Commonly used in applications requiring non-volatile memory storage with parallel interface.

100 ns

COMMON

R-PDIP-T32

e3

41.91 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

35 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

JBP28L22MJ by Texas Instruments

JBP28L22MJ

Texas Instruments

JBP28L22MJ by Texas Instruments is a 256x8 OTP ROM with 2048-bit memory density. Operating at 5V, it has a max access time of 75ns and operates in parallel mode. Ideal for military applications due to its MIL-graded temperature range of -55°C to 125°C.

75 ns

R-GDIP-T20

24.195 mm

2048 bit

OTP ROM

8

1

20

256 words

256

ASYNCHRONOUS

125 Cel

-55 Cel

256X8

CERAMIC, GLASS-SEALED

DIP

DIP20,.3

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

38535Q/M;38534H;883B

5.08 mm

OTP ROMs

5.5 V

4.5 V

5

NO

BIPOLAR

MILITARY

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

JBP28L42MJ by Texas Instruments

JBP28L42MJ

Texas Instruments

JBP28L42MJ by Texas Instruments is a 512x8 OTP ROM with 70ns access time, operating at 25MHz. It has a supply voltage of 5V and operates in military-grade temperature range. Suitable for applications requiring non-volatile memory storage in harsh environments.

70 ns

25 MHz

SEPARATE

R-GDIP-T20

e0

24.195 mm

4096 bit

OTP ROM

8

1

20

512 words

512

ASYNCHRONOUS

125 Cel

-55 Cel

512X8

CERAMIC, GLASS-SEALED

DIP

DIP20,.3

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

38535Q/M;38534H;883B

5.08 mm

OTP ROMs

100 mA

5.25 V

4.75 V

5

NO

BIPOLAR

MILITARY

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

JBP28S42MJ by Texas Instruments

JBP28S42MJ

Texas Instruments

JBP28S42MJ by Texas Instruments is a 512x8 OTP ROM with 70ns access time, operating at up to 25MHz clock frequency. It has a MILITARY temperature grade and operates in ASYNCHRONOUS mode. This rectangular package with 20 terminals is suitable for applications requiring reliable non-volatile memory storage.

70 ns

25 MHz

SEPARATE

R-GDIP-T20

e0

24.195 mm

4096 bit

OTP ROM

8

1

20

512 words

512

ASYNCHRONOUS

125 Cel

-55 Cel

512X8

CERAMIC, GLASS-SEALED

DIP

DIP20,.3

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

38535Q/M;38534H;883B

5.08 mm

OTP ROMs

100 mA

5.25 V

4.75 V

5

NO

BIPOLAR

MILITARY

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

M27W201-80B6 by STMicroelectronics

M27W201-80B6

STMicroelectronics

STMicroelectronics M27W201-80B6 is a 256Kx8 OTP ROM with 80ns access time, operating at 3V. It features a 32-terminal IN-LINE package suitable for industrial applications. The memory density is 2097152 bit, making it ideal for storing large amounts of data efficiently.

80 ns

ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PDIP-T32

e3

42.035 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3/3.3

Not Qualified

4.83 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27W401-80B6 by STMicroelectronics

M27W401-80B6

STMicroelectronics

M27W401-80B6 by STMicroelectronics is a 512Kx8 OTP ROM with 80ns access time. It operates at 3V, has a temperature range of -40 to 85 °C, and consumes up to 15mA. Commonly used in industrial applications requiring non-volatile memory storage.

80 ns

ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PDIP-T32

e3

41.91 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3/3.3

Not Qualified

5.08 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27W402-100B6 by STMicroelectronics

M27W402-100B6

STMicroelectronics

M27W402-100B6 by STMicroelectronics is a 256KX16 OTP ROM with 3-STATE output, operating at 3V. It features an industrial temperature grade, parallel interface, and through-hole terminal form. Ideal for applications requiring non-volatile memory storage in harsh environments.

100 ns

ACCESS TIME 80 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PDIP-T40

e3

52.18 mm

4194304 bit

OTP ROM

16

1

40

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

DIP

DIP40,.6

RECTANGULAR

IN-LINE

PARALLEL

245

3/3.3

Not Qualified

.000015 Amp

OTP ROMs

50 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-10B6 by STMicroelectronics

M27C256B-10B6

STMicroelectronics

STMicroelectronics M27C256B-10B6 is a 32KX8 OTP ROM with 100ns access time, operating at 5V. It features 3-STATE output and CMOS technology, suitable for industrial applications requiring reliable non-volatile memory storage. The device has a compact IN-LINE package style with through-hole terminals, making it ideal for embedded systems in harsh environments.

100 ns

COMMON

R-PDIP-T28

e3

36.83 mm

262144 bit

OTP ROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12.75

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-90B6 by STMicroelectronics

M27C256B-90B6

STMicroelectronics

STMicroelectronics M27C256B-90B6 is a 32KX8 OTP ROM with 3-STATE output, operating at 5V. It has a max access time of 90ns and is ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

90 ns

COMMON

R-PDIP-T28

e3

36.83 mm

262144 bit

OTP ROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12.75

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27V322-100B1 by STMicroelectronics

M27V322-100B1

STMicroelectronics

The STMicroelectronics M27V322-100B1 is a 2MX16 OTP ROM with 3.3V supply, 100ns access time, and 42 terminals in an IN-LINE package. It operates in ASYNCHRONOUS mode with 3-STATE output suitable for commercial applications requiring reliable non-volatile memory storage.

100 ns

COMMON

R-PDIP-T42

e3

52.455 mm

33554432 bit

OTP ROM

16

1

42

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX16

3-STATE

PLASTIC/EPOXY

DIP

DIP42,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

5.08 mm

.00006 Amp

OTP ROMs

30 mA

3.63 V

2.97 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

JBP18S030MJ by Texas Instruments

JBP18S030MJ

Texas Instruments

JBP18S030MJ by Texas Instruments is a 256-bit OTP ROM with 32x8 organization, operating at 5V. It features a max access time of 50ns and operates in MILITARY temperature grade. Suitable for applications requiring reliable non-volatile memory storage in harsh environments.

50 ns

SEPARATE

R-GDIP-T16

e0

19.56 mm

256 bit

OTP ROM

8

1

16

32 words

32

ASYNCHRONOUS

125 Cel

-55 Cel

32X8

CERAMIC, GLASS-SEALED

DIP

DIP16,.3

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

38535Q/M;38534H;883B

5.08 mm

OTP ROMs

110 mA

5.5 V

4.5 V

5

NO

CMOS

MILITARY

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

AT27C010-45PU by Atmel

AT27C010-45PU

Atmel

AT27C010-45PU by Atmel is a 128KX8 OTP ROM with 45 ns access time, operating at 5V. It is commonly used in industrial applications for storing program code due to its high memory density and low standby current of 0.00001 Amp.

45 ns

COMMON

R-PDIP-T32

e3

42.037 mm

1048576 bit

OTP ROM

8

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

245

5

Not Qualified

4.826 mm

.00001 Amp

OTP ROMs

35 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm