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INDUSTRIAL MRAMs 4

MRAMs
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Minimum Data Retention Time Endurance JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width Maximum Write Cycle Time (tWC)
MR25H40CDCR by Everspin Technologies

MR25H40CDCR

Everspin Technologies

MR25H40CDCR by Everspin Technologies is a 512Kx8 MRAM with 3.3V supply, operating from -40 to 85°C. It features synchronous operation, small outline package, and industrial temperature grade. Ideal for applications requiring fast non-volatile memory with high endurance and reliability.

R-PDSO-N8

6 mm

4194304 bit

MRAM

8

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

1.05 mm

SRAMs

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

5 mm

MR4A08BCYS35R by Everspin Technologies

MR4A08BCYS35R

Everspin Technologies

Everspin Technologies' MR4A08BCYS35R is a 2MX8 MRAM with 3.3V supply, operating at -40 to 85 °C. It features a small outline package, parallel interface, and 35ns access time. Ideal for industrial applications requiring fast non-volatile memory with high endurance and low power consumption.

35 ns

20

R-PDSO-G44

18.41 mm

16777216 bit

MRAM

8

3

1

44

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.009 Amp

3 V

SRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

40

10.16 mm

.000035 ms

MR25H40VDFR by Everspin Technologies

MR25H40VDFR

Everspin Technologies

MR25H40VDFR by Everspin Technologies is a 512Kx8 MRAM with 3.3V supply, operating at -40 to 105 °C. It features synchronous mode, small outline package, and CMOS technology. Ideal for industrial applications requiring fast non-volatile memory with 4194304-bit density.

R-PDSO-N8

6 mm

4194304 bit

MRAM

8

3

1

8

524288 words

512K

SYNCHRONOUS

105 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

3.3

Not Qualified

.9 mm

SRAMs

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

5 mm

MR4A16BCMA35R by Everspin Technologies

MR4A16BCMA35R

Everspin Technologies

Everspin Technologies' MR4A16BCMA35R is a 1MX16 MRAM with 3.3V supply, 35ns access time, and 1M words code. It is used in industrial applications requiring fast, non-volatile memory with low power consumption and high reliability.

35 ns

20

S-PBGA-B48

10 mm

16777216 bit

MRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.009 Amp

3 V

SRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

10 mm

.000035 ms