Loading...

LBGA Flash Memory 107

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
S29GL064N90FFIS10 by Infineon Technologies

S29GL064N90FFIS10

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Width: 11 mm; Sector Size (Words): 64K;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL032N11FFIS13 by Infineon Technologies

S29GL032N11FFIS13

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Type: NOR TYPE; Nominal Supply Voltage / Vsup (V): 3;

110 ns

8

NO

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

1.65 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL032N11FFIS23 by Infineon Technologies

S29GL032N11FFIS23

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V; Minimum Supply Voltage (Vsup): 1.65 V;

110 ns

8

NO

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

1.65 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL032N90FFIS20 by Infineon Technologies

S29GL032N90FFIS20

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V; Maximum Seated Height: 1.4 mm;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL032N90FFIS23 by Infineon Technologies

S29GL032N90FFIS23

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Nominal Supply Voltage / Vsup (V): 3;

90 ns

8

NO

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

S29GL064N11FFIS23 by Infineon Technologies

S29GL064N11FFIS23

Infineon Technologies

FLASH; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Terminal Form: BALL;

110 ns

8

NO

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

YES

1.4 mm

64K

3.6 V

1.65 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

MTFC4GLGDQ-AIT by Micron Technology

MTFC4GLGDQ-AIT

Micron Technology

FLASH; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Technology: CMOS; Package Equivalence Code: BGA100,10X17,40;

52 MHz

NO

NO

R-PBGA-B100

18 mm

34359738368 bit

FLASH

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

3.6 V

2.7 V

YES

CMOS

BALL

1 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC32GJGDQ-AIT by Micron Technology

MTFC32GJGDQ-AIT

Micron Technology

FLASH; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 274877906944 bit; Command User Interface: NO;

52 MHz

NO

NO

R-PBGA-B100

18 mm

274877906944 bit

FLASH

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

3.6 V

2.7 V

YES

CMOS

BALL

1 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC32GAZAQDW-AAT by Micron Technology

MTFC32GAZAQDW-AAT

Micron Technology

MTFC32GAZAQDW-AAT by Micron Technology is a 32GX8 NAND flash memory with 3.3V supply voltage, operating at up to 200MHz clock frequency. AEC-Q100 screening makes it suitable for automotive applications requiring high reliability in harsh environments. Its low profile grid array package and synchronous operation offer compact design and efficient data transfer for automotive electronics.

200 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3.3

AEC-Q100

1.5 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC32GAZAQDW-AATTR by Micron Technology

MTFC32GAZAQDW-AATTR

Micron Technology

Micron Technology's MTFC32GAZAQDW-AATTR is a 32GX8 NAND flash memory with 3.3V supply voltage, operating at up to 200MHz clock frequency. Designed for automotive applications meeting AEC-Q100 standards, it offers high memory density of 274877906944 bits in a compact GRID ARRAY package style.

200 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3.3

AEC-Q100

1.5 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

S29GL064S90FHI020 by Infineon Technologies

S29GL064S90FHI020

Infineon Technologies

S29GL064S90FHI020 by Infineon Technologies is a 64Mb NOR Flash Memory with 4MX16 organization, operating at 3V. It features hardware/software write protection, asynchronous operation, and 100000 Write/Erase cycles endurance. Ideal for applications requiring fast access times and high data density in a compact package.

90 ns

8

YES

YES

YES

20

100000 Write/Erase Cycles

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

128

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

8/16

PARALLEL

3

YES

1.4 mm

64K

.0002 Amp

60 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

60 ms

HARDWARE/SOFTWARE