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TBGA DRAM 176

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT46V32M16FN-75L:C by Micron Technology

MT46V32M16FN-75L:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M8FG-6L:G by Micron Technology

MT46V32M8FG-6L:G

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

14 mm

268435456 bit

DDR1 DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

410 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

8 mm

MT46V64M4FG-75:G by Micron Technology

MT46V64M4FG-75:G

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

14 mm

268435456 bit

DDR1 DRAM

4

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX4

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

365 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

8 mm

MT46V64M8BN-5B:D by Micron Technology

MT46V64M8BN-5B:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

450 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8BN-75L:D by Micron Technology

MT46V64M8BN-75L:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8FN-75:D by Micron Technology

MT46V64M8FN-75:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8FN-75IT:D by Micron Technology

MT46V64M8FN-75IT:D

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V16M16FG-6L:F by Micron Technology

MT46V16M16FG-6L:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PBGA-B60

e0

14 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

440 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

8 mm

MT46V128M4BN-6:F by Micron Technology

MT46V128M4BN-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX4

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-5B:F by Micron Technology

MT46V32M16BN-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-5BIT:F by Micron Technology

MT46V32M16BN-5BIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-5BLIT:F by Micron Technology

MT46V32M16BN-5BLIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-6IT:F by Micron Technology

MT46V32M16BN-6IT:F

Micron Technology

Micron Technology's MT46V32M16BN-6IT:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-5B:F by Micron Technology

MT46V32M16FN-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-6:F by Micron Technology

MT46V32M16FN-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-6IT:F by Micron Technology

MT46V32M16FN-6IT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

30

10 mm

MT46V64M8BN-5B:F by Micron Technology

MT46V64M8BN-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

450 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT46V64M8BN-6:F by Micron Technology

MT46V64M8BN-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8BN-6IT:F by Micron Technology

MT46V64M8BN-6IT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT46V64M8BN-6L:F by Micron Technology

MT46V64M8BN-6L:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8FN-6IT:F by Micron Technology

MT46V64M8FN-6IT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

30

10 mm

IS43R16320D-6BL by Integrated Silicon Solution

IS43R16320D-6BL

Integrated Silicon Solution

IS43R16320D-6BL by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with a max clock frequency of 166 MHz. It operates synchronously and has a memory density of 536870912 bit. It is commonly used in applications requiring high-speed data storage and retrieval.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

13 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.025 Amp

DRAMs

370 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT44K32M36RB-107EIT:A by Micron Technology

MT44K32M36RB-107EIT:A

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 1.42 V;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

-40 Cel

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093EIT:B by Micron Technology

MT44K16M36RB-093EIT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093F:B by Micron Technology

MT44K16M36RB-093F:B

Micron Technology

Micron Technology's MT44K16M36RB-093F:B is a DDR DRAM with 16MX36 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and a memory density of 603979776 bits. Ideal for applications requiring high-speed data processing in compact devices.

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-107E:B by Micron Technology

MT44K16M36RB-107E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Density: 603979776 bit;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-107EIT:B by Micron Technology

MT44K16M36RB-107EIT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093E:B by Micron Technology

MT44K32M18RB-093E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093F:B by Micron Technology

MT44K32M18RB-093F:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Technology: CMOS;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-107E:B by Micron Technology

MT44K32M18RB-107E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT46V16M16CY-5B:KTR by Micron Technology

MT46V16M16CY-5B:KTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 268435456 bit;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

12.5 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

1.2 mm

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

8 mm

MT44K16M36RB-093E:BTR by Micron Technology

MT44K16M36RB-093E:BTR

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Package Equivalence Code: BGA168,13X13,40;

MULTI BANK PAGE BURST

1075 MHz

COMMON

2,4

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR3 DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

100 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

2,4

.225 Amp

2840 mA

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093EIT:BTR by Micron Technology

MT44K16M36RB-093EIT:BTR

Micron Technology

DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Interleaved Burst Length: 2,4;

MULTI BANK PAGE BURST

1075 MHz

COMMON

2,4

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR3 DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

100 Cel

-40 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

YES

2,4

.225 Amp

2840 mA

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-093F:BTR by Micron Technology

MT44K16M36RB-093F:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Clock Frequency (fCLK): 1075.2 MHz; No. of Functions: 1;

MULTI BANK PAGE BURST

AUTO REFRESH

1075.2 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

603979776 bit

RLDRAM3

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

2840 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-107E:BTR by Micron Technology

MT44K16M36RB-107E:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Organization: 16MX36; Width: 13.5 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

603979776 bit

RLDRAM3

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

2665 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-093E:BTR by Micron Technology

MT44K32M18RB-093E:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.28 V; Maximum Clock Frequency (fCLK): 1075.2 MHz;

MULTI BANK PAGE BURST

AUTO REFRESH

1075.2 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

603979776 bit

RLDRAM3

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

2620 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-107E:BTR by Micron Technology

MT44K32M18RB-107E:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; JESD-609 Code: e1; Length: 13.5 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

603979776 bit

RLDRAM3

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

2565 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-107EIT:BTR by Micron Technology

MT44K32M18RB-107EIT:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Supply Current: 2565 mA; Package Style (Meter): GRID ARRAY, THIN PROFILE;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

13.5 mm

603979776 bit

RLDRAM3

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

-40 Cel

32MX18

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

NO

2,4,8

.225 Amp

2565 mA

1.45 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-125E:ATR by Micron Technology

MT44K32M18RB-125E:ATR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Terminal Form: BALL; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

800 MHz

COMMON

2,4,8

S-PBGA-B168

13.5 mm

603979776 bit

RLDRAM3

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

NO

2,4,8

1.45 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

13.5 mm

MT44K32M36RB-093E:ATR by Micron Technology

MT44K32M36RB-093E:ATR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.28 V; Organization: 32MX36;

MULTI BANK PAGE BURST

AUTO REFRESH

1075.2 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

1207959552 bit

RLDRAM3

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

1140 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M36RB-107E:ATR by Micron Technology

MT44K32M36RB-107E:ATR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Width: 36; Memory Density: 1207959552 bit;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

1207959552 bit

RLDRAM3

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

1070 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M36RB-107EIT:ATR by Micron Technology

MT44K32M36RB-107EIT:ATR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Sequential Burst Length: 2,4,8; Minimum Operating Temperature: -40 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

13.5 mm

1207959552 bit

RLDRAM3

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

-40 Cel

32MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

NO

2,4,8

.225 Amp

1070 mA

1.45 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT49H16M18CFM-25:B by Micron Technology

MT49H16M18CFM-25:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

11 mm

MT49H16M18CBM-25:B by Micron Technology

MT49H16M18CBM-25:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

11 mm

MT49H16M18CSJ-25:B by Micron Technology

MT49H16M18CSJ-25:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

11 mm

MT49H16M18CSJ-25IT:B by Micron Technology

MT49H16M18CSJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M18SJ-25:B by Micron Technology

MT49H16M18SJ-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Ports: 1; Width: 11 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H16M18SJ-25IT:B by Micron Technology

MT49H16M18SJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm