Loading...

TBGA DRAM 176

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT44K32M18RB-093EIT:A by Micron Technology

MT44K32M18RB-093EIT:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; Memory Width: 18;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093IT:A by Micron Technology

MT44K32M18RB-093IT:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Memory Density: 603979776 bit;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-107:A by Micron Technology

MT44K32M18RB-107:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Words Code: 32M; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-107E:A by Micron Technology

MT44K32M18RB-107E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS; Length: 13.5 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-125:A by Micron Technology

MT44K32M18RB-125:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; Length: 13.5 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-125E:A by Micron Technology

MT44K32M18RB-125E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Self Refresh: YES; Memory Width: 18;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-125EIT:A by Micron Technology

MT44K32M18RB-125EIT:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Width: 18; Terminal Pitch: 1 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT46V16M16CY-5BAAT:M by Micron Technology

MT46V16M16CY-5BAAT:M

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

AEC-Q100

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

175 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT46V16M16CY-5BAIT:M by Micron Technology

MT46V16M16CY-5BAIT:M

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

175 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

8 mm

UPD48288118AFF-E24-DW1-A by Renesas Electronics

UPD48288118AFF-E24-DW1-A

Renesas Electronics

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

e6

18.5 mm

301989888 bit

DDR1 DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.8,2.5

Not Qualified

1.17 mm

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN BISMUTH

BALL

1 mm

BOTTOM

11 mm

UPD48288118AFF-E24-DW1 by Renesas Electronics

UPD48288118AFF-E24-DW1

Renesas Electronics

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 16777216 words;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR1 DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.8,2.5

Not Qualified

1.17 mm

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT44K16M36RB-125F:A by Micron Technology

MT44K16M36RB-125F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Self Refresh: YES; Terminal Pitch: 1 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

13.5 mm

MT49H16M18CBM-25IT:B by Micron Technology

MT49H16M18CBM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M18BM-18:B by Micron Technology

MT49H16M18BM-18:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8; Technology: CMOS;

MULTI BANK PAGE BURST

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

830 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H16M18BM-25IT:B by Micron Technology

MT49H16M18BM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 18.5 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M18FM-25:B by Micron Technology

MT49H16M18FM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Ports: 1; Output Characteristics: 3-STATE;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H16M18FM-25IT:B by Micron Technology

MT49H16M18FM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 11 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M18FM-33:B by Micron Technology

MT49H16M18FM-33:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA144,12X18,40/32; Maximum Clock Frequency (fCLK): 300 MHz;

MULTI BANK PAGE BURST

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

530 mA

1.9 V

1.7 V

1.8

YES

CMOS

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT49H32M9BM-25:B by Micron Technology

MT49H32M9BM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H32M9BM-33:B by Micron Technology

MT49H32M9BM-33:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm; Maximum Clock Frequency (fCLK): 300 MHz;

MULTI BANK PAGE BURST

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H32M9FM-25:B by Micron Technology

MT49H32M9FM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 9; Input/Output Type: COMMON;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H32M9FM-33:B by Micron Technology

MT49H32M9FM-33:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 9; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H8M36BM-18:B by Micron Technology

MT49H8M36BM-18:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm; Input/Output Type: COMMON;

MULTI BANK PAGE BURST

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

885 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H8M36BM-25:B by Micron Technology

MT49H8M36BM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm; Package Equivalence Code: BGA144,12X18,40/32;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H8M36BM-25E:B by Micron Technology

MT49H8M36BM-25E:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Functions: 1; Package Style (Meter): GRID ARRAY, THIN PROFILE;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H8M36BM-25IT:B by Micron Technology

MT49H8M36BM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 301989888 bit;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H8M36BM-33:B by Micron Technology

MT49H8M36BM-33:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER; JESD-609 Code: e1;

MULTI BANK PAGE BURST

AUTO REFRESH

333 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

565 mA

1.9 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H8M36BM-33IT:B by Micron Technology

MT49H8M36BM-33IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA144,12X18,40/32;

MULTI BANK PAGE BURST

AUTO REFRESH

333 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

565 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H8M36FM-25:B by Micron Technology

MT49H8M36FM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V; Width: 11 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H8M36FM-25IT:B by Micron Technology

MT49H8M36FM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Sequential Burst Length: 2,4,8;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT46V16M16CY-5B:M by Micron Technology

MT46V16M16CY-5B:M

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

175 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT44K32M18RB-125F:A by Micron Technology

MT44K32M18RB-125F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Width: 13.5 mm; No. of Words: 33554432 words;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

13.5 mm

MT46V64M8BN-6IT:FTR by Micron Technology

MT46V64M8BN-6IT:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT46V128M4FN-6:FTR by Micron Technology

MT46V128M4FN-6:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 4;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8FN-6IT:FTR by Micron Technology

MT46V64M8FN-6IT:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT49H16M36BM-25:A by Micron Technology

MT49H16M36BM-25:A

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.048 Amp

DRAMs

1100 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT46V16M16BG-6:F by Micron Technology

MT46V16M16BG-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PBGA-B60

e1

14 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

440 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT46V16M16FG-75:F by Micron Technology

MT46V16M16FG-75:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

14 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

400 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

8 mm

MT46V32M16BN-5B:C by Micron Technology

MT46V32M16BN-5B:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-6:C by Micron Technology

MT46V32M16BN-6:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-75:C by Micron Technology

MT46V32M16BN-75:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-75IT:C by Micron Technology

MT46V32M16BN-75IT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-75L:C by Micron Technology

MT46V32M16BN-75L:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-5B:C by Micron Technology

MT46V32M16FN-5B:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-6:C by Micron Technology

MT46V32M16FN-6:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-6IT:C by Micron Technology

MT46V32M16FN-6IT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

30

10 mm

MT46V32M16FN-75:C by Micron Technology

MT46V32M16FN-75:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-75IT:C by Micron Technology

MT46V32M16FN-75IT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm