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FBGA DRAM 10

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT48H8M32LFB5-75AT:H by Micron Technology

MT48H8M32LFB5-75AT:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: FBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

268435456 bit

SYNCHRONOUS DRAM

32

90

8388608 words

8M

105 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

FBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1.8

Not Qualified

4096

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

IS42S32800G-6BLI-TR by Integrated Silicon Solution

IS42S32800G-6BLI-TR

Integrated Silicon Solution

IS42S32800G-6BLI-TR by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 166 MHz and has a temperature grade of INDUSTRIAL. It is commonly used in applications requiring high-speed data storage and retrieval, such as networking equipment and industrial control systems.

5.4 ns

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

268435456 bit

SYNCHRONOUS DRAM

32

90

8388608 words

8M

85 Cel

-40 Cel

8MX32

3-STATE

PLASTIC/EPOXY

FBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

3.3

Not Qualified

4096

1,2,4,8,FP

.003 Amp

DRAMs

350 mA

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

IS42S32400F-6BL-TR by Integrated Silicon Solution

IS42S32400F-6BL-TR

Integrated Silicon Solution

IS42S32400F-6BL-TR by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, 166 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high memory density and fast data processing in a compact grid array package.

5.4 ns

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

134217728 bit

SYNCHRONOUS DRAM

32

90

4194304 words

4M

70 Cel

0 Cel

4MX32

3-STATE

PLASTIC/EPOXY

FBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

180 mA

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

IS42S16800F-7BL-TR by Integrated Silicon Solution

IS42S16800F-7BL-TR

Integrated Silicon Solution

IS42S16800F-7BL-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 134217728 bit memory density. It operates at a max clock frequency of 143 MHz and has a memory width of 16. Ideal for commercial applications requiring high-speed data processing in devices like networking equipment and industrial control systems.

5.4 ns

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

134217728 bit

SYNCHRONOUS DRAM

16

54

8388608 words

8M

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, FINE PITCH

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

100 mA

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

IS42S83200G-7BLI-TR by Integrated Silicon Solution

IS42S83200G-7BLI-TR

Integrated Silicon Solution

IS42S83200G-7BLI-TR by Integrated Silicon Solution is a 32MX8 Synchronous DRAM with 3.3V supply, 85°C max temp, and 143 MHz clock frequency. Ideal for industrial applications requiring high memory density and fast access times.

5.4 ns

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

268435456 bit

SYNCHRONOUS DRAM

8

54

33554432 words

32M

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

FBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, FINE PITCH

3.3

Not Qualified

8192

1,2,4,8,FP

.004 Amp

DRAMs

130 mA

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

MT42L64M32D1LF-18IT:C by Micron Technology

MT42L64M32D1LF-18IT:C

Micron Technology

Micron Technology's MT42L64M32D1LF-18IT:C is a LPDDR2 DRAM with 168 terminals, operating at 533 MHz. It has a memory density of 2147483648 bits and supports sequential burst lengths of 4, 8, and 16. Ideal for industrial applications requiring high-speed data processing in temperatures ranging from -40 to 85°C.

5.5 ns

533 MHz

COMMON

4,8,16

S-PBGA-B168

2147483648 bit

LPDDR2 DRAM

168

85 Cel

-40 Cel

3-STATE

PLASTIC/EPOXY

FBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, FINE PITCH

1.2,1.8

Not Qualified

8192

4,8,16

.000025 Amp

DRAMs

220 mA

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MT47H512M8WTR-3:C by Micron Technology

MT47H512M8WTR-3:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

COMMON

R-PBGA-B63

e3

4294967296 bit

DDR2 DRAM

8

1

63

536870912 words

512M

85 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

FBGA

BGA63,9X11,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1.8

Not Qualified

8192

DRAMs

1.8

YES

CMOS

OTHER

MATTE TIN

BALL

.8 mm

BOTTOM

MT47H256M8THN-3:H by Micron Technology

MT47H256M8THN-3:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

333 MHz

COMMON

R-PBGA-B63

2147483648 bit

DDR2 DRAM

8

63

268435456 words

256M

85 Cel

0 Cel

256MX8

3-STATE

PLASTIC/EPOXY

FBGA

BGA63,9X11,32

RECTANGULAR

GRID ARRAY, FINE PITCH

260

1.8

Not Qualified

8192

.014 Amp

DRAMs

192 mA

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

30

MT47H512M4THN-3:H by Micron Technology

MT47H512M4THN-3:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

333 MHz

COMMON

R-PBGA-B63

2147483648 bit

DDR2 DRAM

4

63

536870912 words

512M

85 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

FBGA

BGA63,9X11,32

RECTANGULAR

GRID ARRAY, FINE PITCH

260

1.8

Not Qualified

8192

.014 Amp

DRAMs

192 mA

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

30

MT46H256M32L4SA-48WT:C by Micron Technology

MT46H256M32L4SA-48WT:C

Micron Technology

LPDDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

5 ns

208 MHz

COMMON

2,4,8,16

S-PBGA-B168

8589934592 bit

LPDDR1 DRAM

32

168

268435456 words

256M

85 Cel

-25 Cel

256MX32

3-STATE

PLASTIC/EPOXY

FBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, FINE PITCH

260

1.8

Not Qualified

8192

2,4,8,16

.00001 Amp

DRAMs

90 mA

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

30