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78 DRAM 167

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT40A8G4CLU-075H:ETR by Micron Technology

MT40A8G4CLU-075H:ETR

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

MT41K256M8DA-107:KTR by Micron Technology

MT41K256M8DA-107:KTR

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3L DRAM

8

3

1

1

78

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT41K512M4DA-125:KTR by Micron Technology

MT41K512M4DA-125:KTR

Micron Technology

Micron Technology's MT41K512M4DA-125:KTR is a DDR3L DRAM with 512MX4 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and tablets.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3L DRAM

4

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

AS4C1G8MD3L-12BCNTR by Alliance Memory

AS4C1G8MD3L-12BCNTR

Alliance Memory

Alliance Memory's AS4C1G8MD3L-12BCNTR is a DDR3L DRAM with 1GX8 organization, operating at up to 800 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high memory density and fast data access in compact electronic devices.

MULTI BANK PAGE BURST

800 MHz

COMMON

4,8

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

3

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.011 Amp

1.283 V

125 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

IS43TR81024BL-107MBLI by Integrated Silicon Solution

IS43TR81024BL-107MBLI

Integrated Silicon Solution

IS43TR81024BL-107MBLI by Integrated Silicon Solution is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

14 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm

MT40A2G8VA-062E:B by Micron Technology

MT40A2G8VA-062E:B

Micron Technology

Micron Technology's MT40A2G8VA-062E:B is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data processing in devices like servers and high-performance computers.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

e1

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.14 V

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT40A4G4VA-062E:B by Micron Technology

MT40A4G4VA-062E:B

Micron Technology

Micron Technology's MT40A4G4VA-062E:B is a DDR4 DRAM with 4GX4 organization, operating at 1600 MHz. It features a thin profile grid array package with 78 terminals and operates synchronously. Ideal for applications requiring high-speed memory access in devices like servers and high-performance computing systems.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

e1

11 mm

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX4

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.14 V

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT40A8G4BAF-062E:B by Micron Technology

MT40A8G4BAF-062E:B

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;

MULTI BANK PAGE BURST

1600 MHz

COMMON

R-PBGA-B78

11 mm

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

TFBGA

BGA78,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

277 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

10.5 mm

MT40A4G8BAF-062E:B by Micron Technology

MT40A4G8BAF-062E:B

Micron Technology

Micron Technology's MT40A4G8BAF-062E:B is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a density of 34359738368 bits.

MULTI BANK PAGE BURST

1600 MHz

COMMON

R-PBGA-B78

e1

11 mm

34359738368 bit

DDR4 DRAM

8

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

245 mA

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

10.5 mm

MT40A2G8JC-062E:E by Micron Technology

MT40A2G8JC-062E:E

Micron Technology

Micron Technology's MT40A2G8JC-062E:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access such as servers, workstations, and high-performance computing systems.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

e1

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.14 V

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT40A4G4JC-062E:E by Micron Technology

MT40A4G4JC-062E:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

e1

11 mm

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX4

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.14 V

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT40A1G8SA-062EAIT:E by Micron Technology

MT40A1G8SA-062EAIT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EAIT:E is a DDR4 DRAM with 1.2V supply, operating at up to 1600MHz clock frequency. It features 1GX8 organization, 1073741824 words capacity, and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics or industrial systems.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.018 Amp

190 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G8SA-062EAUT:E by Micron Technology

MT40A1G8SA-062EAUT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EAUT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously, supports self-refresh, and has a max temperature of 125°C. Ideal for applications requiring high-speed memory in automotive or industrial environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.022 Amp

200 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G8JE-062EAUT:E by Micron Technology

MT40A2G8JE-062EAUT:E

Micron Technology

Micron Technology's MT40A2G8JE-062EAUT:E is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a thin profile and fine pitch package style.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

125 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.043 Amp

162 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

30

9 mm

MT40A2G8JE-062EAAT:E by Micron Technology

MT40A2G8JE-062EAAT:E

Micron Technology

Micron Technology's MT40A2G8JE-062EAAT:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a common I/O type, synchronous mode, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.043 Amp

162 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT41K2G4RKB-107:P by Micron Technology

MT41K2G4RKB-107:P

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 933 MHz;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

10.5 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

.022 Amp

163 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

30

8 mm

MT40A4G4SA-062E:F by Micron Technology

MT40A4G4SA-062E:F

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX4

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G8SA-062E:F by Micron Technology

MT40A2G8SA-062E:F

Micron Technology

Micron Technology's MT40A2G8SA-062E:F is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G8SA-062E:J by Micron Technology

MT40A1G8SA-062E:J

Micron Technology

Micron Technology's MT40A1G8SA-062E:J is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G4SA-062E:J by Micron Technology

MT40A2G4SA-062E:J

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G4SA-062E:R by Micron Technology

MT40A2G4SA-062E:R

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR; Package Equivalence Code: BGA78,6X13,32;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A8G4NEA-062E:F by Micron Technology

MT40A8G4NEA-062E:F

Micron Technology

Micron Technology's MT40A8G4NEA-062E:F is a DDR4 DRAM with 8GX4 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access and multi-bank page burst functionality.

MULTI BANK PAGE BURST

1600 MHz

COMMON

R-PBGA-B78

11 mm

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

TFBGA

BGA78,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

308 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G8AG-062EAAT:F by Micron Technology

MT40A2G8AG-062EAAT:F

Micron Technology

Micron Technology's MT40A2G8AG-062EAAT:F is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a thin profile grid array package, suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.084 Amp

81 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm