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78 DRAM 167

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT41J256M4JP-15E:G by Micron Technology

MT41J256M4JP-15E:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B78

e1

11.5 mm

1073741824 bit

DDR3 DRAM

4

1

1

78

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

DRAMs

315 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41K512M8RH-125MAIT:E by Micron Technology

MT41K512M8RH-125MAIT:E

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.35; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT41J1G4THD-15E:D by Micron Technology

MT41J1G4THD-15E:D

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

667 MHz

COMMON

R-PBGA-B78

e1

11.5 mm

4294967296 bit

DDR3 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

.024 Amp

DRAMs

337 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41J512M8THD-15E:D by Micron Technology

MT41J512M8THD-15E:D

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

667 MHz

COMMON

R-PBGA-B78

e1

11.5 mm

4294967296 bit

DDR3 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

.024 Amp

DRAMs

337 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41J512M8THD-187E:D by Micron Technology

MT41J512M8THD-187E:D

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.425 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

11.5 mm

4294967296 bit

DDR3 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Not Qualified

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT40A4G4DVN-062H:E by Micron Technology

MT40A4G4DVN-062H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

BOTTOM

MT40A8G4CLU-062H:E by Micron Technology

MT40A8G4CLU-062H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

MT40A8G4CLU-075H:E by Micron Technology

MT40A8G4CLU-075H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

MT40A512M8SA-062EAAT:F by Micron Technology

MT40A512M8SA-062EAAT:F

Micron Technology

Micron Technology's MT40A512M8SA-062EAAT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 105°C.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

.047 Amp

1.14 V

51 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M8SA-062EAIT:F by Micron Technology

MT40A512M8SA-062EAIT:F

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

.045 Amp

1.14 V

49 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M8SA-062EAUT:F by Micron Technology

MT40A512M8SA-062EAUT:F

Micron Technology

DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

.049 Amp

1.14 V

53 mA

1.26 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

AS4C512M8D4-75BCN by Alliance Memory

AS4C512M8D4-75BCN

Alliance Memory

Alliance Memory's AS4C512M8D4-75BCN is a 512MX8 DDR4 DRAM with 1333 MHz clock frequency, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in compact electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333 MHz

COMMON

8

R-PBGA-B78

10.6 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

8

.044 Amp

196 mA

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

AS4C512M8D4-75BIN by Alliance Memory

AS4C512M8D4-75BIN

Alliance Memory

Alliance Memory's AS4C512M8D4-75BIN is a DDR4 DRAM with 512MX8 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333 MHz

COMMON

8

R-PBGA-B78

10.6 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

8

.044 Amp

196 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

AS4C512M8D4-83BIN by Alliance Memory

AS4C512M8D4-83BIN

Alliance Memory

Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200 MHz

COMMON

8

R-PBGA-B78

10.6 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

8

.04 Amp

187 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT41K512M8DA-093:PTR by Micron Technology

MT41K512M8DA-093:PTR

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

1066 MHz

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

8

.012 Amp

150 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT40A1G8SA-062EAAT:ETR by Micron Technology

MT40A1G8SA-062EAAT:ETR

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

105 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT40A1G8WE-075EAIT:BTR by Micron Technology

MT40A1G8WE-075EAIT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-075EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333.33 MHz

COMMON

8

R-PBGA-B78

e1

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.025 Amp

149 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A1G8WE-075E:BTR by Micron Technology

MT40A1G8WE-075E:BTR

Micron Technology

Micron Technology's MT40A1G8WE-075E:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package and common I/O type, suitable for applications requiring high memory density and fast data processing in devices like servers and PCs.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333.33 MHz

COMMON

8

R-PBGA-B78

e1

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

.046 Amp

63 mA

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT40A1G8WE-083EAAT:BTR by Micron Technology

MT40A1G8WE-083EAAT:BTR

Micron Technology

MT40A1G8WE-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 1GX8 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B78

e1

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

105 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.025 Amp

138 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A1G8WE-083EAIT:BTR by Micron Technology

MT40A1G8WE-083EAIT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory performance in automotive electronics and industrial environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B78

e1

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.025 Amp

138 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A1G8WE-083EAUT:BTR by Micron Technology

MT40A1G8WE-083EAUT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083EAUT:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory in automotive electronics and other industrial environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B78

e1

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.025 Amp

138 mA

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT40A1G8WE-083E:BTR by Micron Technology

MT40A1G8WE-083E:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083E:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.48 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices with a max temperature of 95°C.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.48 MHz

COMMON

8

R-PBGA-B78

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

8

.034 Amp

175 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT40A512M8RH-075EAAT:BTR by Micron Technology

MT40A512M8RH-075EAAT:BTR

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 105 Cel; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333.33 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A512M8RH-083EAIT:BTR by Micron Technology

MT40A512M8RH-083EAIT:BTR

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Screening Level: AEC-Q100; Minimum Supply Voltage (Vsup): 1.14 V;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A512M8SA-062EAAT:FTR by Micron Technology

MT40A512M8SA-062EAAT:FTR

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M8SA-062EAIT:FTR by Micron Technology

MT40A512M8SA-062EAIT:FTR

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M8SA-062EAUT:FTR by Micron Technology

MT40A512M8SA-062EAUT:FTR

Micron Technology

Micron Technology's MT40A512M8SA-062EAUT:FTR is a DDR4 DRAM with 512MX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for automotive applications, meeting AEC-Q100 standards. With self-refresh capability and common I/O type, it offers reliable performance in harsh environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M8SA-062EIT:FTR by Micron Technology

MT40A512M8SA-062EIT:FTR

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.16 ns

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A1G4HX-083E:A by Micron Technology

MT40A1G4HX-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 9 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR4 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A1G4HX-093E:A by Micron Technology

MT40A1G4HX-093E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR4 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A512M8HX-083E:A by Micron Technology

MT40A512M8HX-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A512M8HX-093E:A by Micron Technology

MT40A512M8HX-093E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 9 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K128M8DA-107AIT:J by Micron Technology

MT41K128M8DA-107AIT:J

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Memory Width: 8;

MULTI BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

1073741824 bit

DDR3L DRAM

8

1

1

78

134217728 words

128M

SYNCHRONOUS

128MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT41K1G4RG-107:N by Micron Technology

MT41K1G4RG-107:N

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.6 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT41K512M8RG-093:N by Micron Technology

MT41K512M8RG-093:N

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.6 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT41K512M8RG-107:N by Micron Technology

MT41K512M8RG-107:N

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.6 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

MT41K1G8SN-107:A by Micron Technology

MT41K1G8SN-107:A

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K1G8SN-107IT:A by Micron Technology

MT41K1G8SN-107IT:A

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.283 V;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K1G8SN-125:A by Micron Technology

MT41K1G8SN-125:A

Micron Technology

Micron Technology's MT41K1G8SN-125:A is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 8589934592 bits. Ideal for applications requiring high-speed data processing in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT41K1G8SN-125IT:A by Micron Technology

MT41K1G8SN-125IT:A

Micron Technology

Micron Technology's MT41K1G8SN-125IT:A is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K2G4SN-125:A by Micron Technology

MT41K2G4SN-125:A

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A1G8PM-083E:A by Micron Technology

MT40A1G8PM-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A2G4PM-083E:A by Micron Technology

MT40A2G4PM-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K1G8RKB-107:N by Micron Technology

MT41K1G8RKB-107:N

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: DUAL BANK PAGE BURST; Self Refresh: YES;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

10.5 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT41K2G4RKB-107:N by Micron Technology

MT41K2G4RKB-107:N

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

10.5 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

2GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT40A1G4RH-075E:B by Micron Technology

MT40A1G4RH-075E:B

Micron Technology

DDR4 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.14 V;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR4 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm

MT40A1G4RH-083E:B by Micron Technology

MT40A1G4RH-083E:B

Micron Technology

Micron Technology's MT40A1G4RH-083E:B is a DDR4 DRAM with 1GX4 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in a compact form factor.

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR4 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A2G4TRF-093E:A by Micron Technology

MT40A2G4TRF-093E:A

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1067.2 MHz

COMMON

8

R-PBGA-B78

11.5 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

.055 Amp

70 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

9.5 mm