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134 DRAM 38

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT42L128M32D1GU-25WT:A by Micron Technology

MT42L128M32D1GU-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 134; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

5.5 ns

SELF CONTAINED REFRESH; ALSO OPERATES AT MINIMUM 1.7 V

400 MHz

COMMON

4,8,16

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA134,10X17,25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.7 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

MT42L128M32D2MH-25IT:A by Micron Technology

MT42L128M32D2MH-25IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit; Width: 11 mm;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.65 mm

BOTTOM

11 mm

MT42L256M32D4MG-25IT:A by Micron Technology

MT42L256M32D4MG-25IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: TFBGA; Package Shape: SQUARE; No. of Ports: 1; Organization: 256MX32;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B134

11.5 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

134

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.65 mm

BOTTOM

11.5 mm

MT42L256M32D4MG-3IT:A by Micron Technology

MT42L256M32D4MG-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: TFBGA; Package Shape: SQUARE; Memory Width: 32; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B134

11.5 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

134

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.65 mm

BOTTOM

11.5 mm

MT42L32M32D2AC-25AAT:A by Micron Technology

MT42L32M32D2AC-25AAT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS; Surface Mount: YES;

FOUR BANK PAGE BURST

5.5 ns

SELF REFRESH

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT42L32M32D2AC-25AIT:A by Micron Technology

MT42L32M32D2AC-25AIT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.95 V;

FOUR BANK PAGE BURST

5.5 ns

SELF REFRESH

R-PBGA-B134

e1

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

10 mm

MT42L16M32D1AC-25AAT:A by Micron Technology

MT42L16M32D1AC-25AAT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B134; JESD-609 Code: e1;

FOUR BANK PAGE BURST

5.5 ns

SELF REFRESH

R-PBGA-B134

e1

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

10 mm

MT42L16M32D1AC-25AIT:A by Micron Technology

MT42L16M32D1AC-25AIT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 11.5 mm;

FOUR BANK PAGE BURST

5.5 ns

SELF REFRESH

R-PBGA-B134

e1

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

10 mm

MT42L128M32D1GU-18WT:A by Micron Technology

MT42L128M32D1GU-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 134; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA134,10X17,25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.7 mm

YES

4,8,16

.0001 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

IS43LD32128B-25BLI by Integrated Silicon Solution

IS43LD32128B-25BLI

Integrated Silicon Solution

IS43LD32128B-25BLI by Integrated Silicon Solution is a 128MX32 LPDDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 4,294,967,296 bits. This DRAM is commonly used in applications that require high-speed data storage and retrieval.

MULTI BANK PAGE BURST

also operates with 1.8v nom supply

400 MHz

COMMON

4,8,16

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA134,10X17,25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.1 mm

YES

4,8,16

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.65 mm

BOTTOM

10 mm

MT42L64M32D1TK-18AAT:C by Micron Technology

MT42L64M32D1TK-18AAT:C

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

533 MHz

COMMON

4,8,16

R-PBGA-B134

11.5 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

134

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA134,10X17,25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

AEC-Q100

.7 mm

YES

4,8,16

.000025 Amp

DRAMs

220 mA

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

10 mm

EDB5432BEBH-1DAAT-F-D by Micron Technology

EDB5432BEBH-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm; Organization: 16MX32;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.65 mm

BOTTOM

10 mm

EDB5432BEBH-1DAUT-F-D by Micron Technology

EDB5432BEBH-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB5432BEBH-1DIT-F-D by Micron Technology

EDB5432BEBH-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB4432BBBJ-1DAAT-F-D by Micron Technology

EDB4432BBBJ-1DAAT-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1DAAT-F-D is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Suitable for applications requiring high memory density and low power consumption in compact devices.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.75 mm

YES

1.95 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

10 mm

EDB4432BBBJ-1DAIT-F-D by Micron Technology

EDB4432BBBJ-1DAIT-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1DAIT-F-D is a 128MX32 LPDDR2 DRAM with 134 terminals, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for industrial applications requiring high memory density and low power consumption.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB4432BBBJ-1DAUT-F-D by Micron Technology

EDB4432BBBJ-1DAUT-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1DAUT-F-D is a PLASTIC/EPOXY DRAM with SYNCHRONOUS operating mode and SELF REFRESH capability. It has a memory density of 4294967296 bit and is commonly used in AUTOMOTIVE applications.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.75 mm

YES

1.95 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

10 mm

IS43LD16640C-25BLI by Integrated Silicon Solution

IS43LD16640C-25BLI

Integrated Silicon Solution

IS43LD16640C-25BLI by Integrated Silicon Solution is a 64MX16 LPDDR2 DRAM with 1073741824 bit memory density. It operates synchronously at 1.2V, featuring self-refresh and multi-bank page burst access mode. Ideal for industrial applications requiring high-speed and low-power memory solutions.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10

10 mm

EDB1332BDBH-1DAAT-F-D by Micron Technology

EDB1332BDBH-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Maximum Seated Height: 1 mm;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

EDB4432BBBJ-1D-F-R by Micron Technology

EDB4432BBBJ-1D-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1D-F-R is a 128MX32 LPDDR2 DRAM with 134 terminals in a grid array package. Operating at 1.2V, it offers synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications. The very thin profile and fine pitch make it suitable for compact electronic devices requiring fast and efficient data processing.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

EDB1316BDBH-1DIT-F-D by Micron Technology

EDB1316BDBH-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

EDB1332BDBH-1DIT-F-D by Micron Technology

EDB1332BDBH-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 32MX32;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

10 mm

EDB2432B4MA-1DIT-F-D by Micron Technology

EDB2432B4MA-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Self Refresh: YES;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

134

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

30

10 mm

EDB4416BBBH-1DIT-F-D by Micron Technology

EDB4416BBBH-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

16

1

1

134

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

10 mm

EDB4416BBBH-1DIT-F-RTR by Micron Technology

EDB4416BBBH-1DIT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

16

1

1

134

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

10 mm

EDB4416BBBH-1DIT-F-R by Micron Technology

EDB4416BBBH-1DIT-F-R

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

16

1

1

134

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

10 mm

EDB4432BBBJ-1D-F-D by Micron Technology

EDB4432BBBJ-1D-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1D-F-D is a 128MX32 LPDDR2 DRAM with 134 terminals in a very thin profile grid array package. Operating at 1.2V, it offers synchronous access mode and self-refresh capability for low power consumption. Ideal for applications requiring high memory density and fast data processing in compact devices.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.65 mm

BOTTOM

10 mm

EDB1316BDBH-1DAAT-F-D by Micron Technology

EDB1316BDBH-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm; Length: 11.5 mm;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1316BDBH-1DAAT-F-RTR by Micron Technology

EDB1316BDBH-1DAAT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

SELF REFRESH

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1316BDBH-1DAUT-F-D by Micron Technology

EDB1316BDBH-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words: 67108864 words;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1316BDBH-1DAUT-F-RTR by Micron Technology

EDB1316BDBH-1DAUT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 64M;

SINGLE BANK PAGE BURST

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1332BDBH-1DAUT-F-D by Micron Technology

EDB1332BDBH-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Access Mode: SINGLE BANK PAGE BURST;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1332BDBH-1DAUT-F-RTR by Micron Technology

EDB1332BDBH-1DAUT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 11.5 mm;

SINGLE BANK PAGE BURST

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB2432B4MA-1DAAT-F-D by Micron Technology

EDB2432B4MA-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .65 mm; Technology: CMOS;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

134

67108864 words

64M

SYNCHRONOUS

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB2432B4MA-1DAAT-F-RTR by Micron Technology

EDB2432B4MA-1DAAT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 10 mm;

SINGLE BANK PAGE BURST

SELF REFRESH

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB2432B4MA-1DAUT-F-D by Micron Technology

EDB2432B4MA-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

134

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB2432B4MA-1DAUT-F-RTR by Micron Technology

EDB2432B4MA-1DAUT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

SINGLE BANK PAGE BURST

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

IS43LD32640B-18BLI-TR by Integrated Silicon Solution

IS43LD32640B-18BLI-TR

Integrated Silicon Solution

IS43LD32640B-18BLI-TR by Integrated Silicon Solution is a 64MX32 LPDDR2 DRAM with 67108864 words and 2147483648 bit memory density. Operating at 1.2V, it features synchronous mode, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact grid array package.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

134

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm