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LPDDR4 DRAM DRAM 89

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT53D512M32D2NP-053WT:D by Micron Technology

MT53D512M32D2NP-053WT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Access Mode: SINGLE BANK PAGE BURST; No. of Words Code: 512M;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY

1869.1 MHz

COMMON

16,32

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX32

PLASTIC/EPOXY

RECTANGULAR

.8 mm

YES

16,32

1.95 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

10 mm

MT53D512M32D2NP-062WT:D by Micron Technology

MT53D512M32D2NP-062WT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Shape: RECTANGULAR; Maximum Seated Height: .8 mm; Memory Width: 32; Memory Density: 17179869184 bit;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY

1600 MHz

COMMON

16,32

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX32

PLASTIC/EPOXY

RECTANGULAR

.8 mm

YES

16,32

1.95 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

10 mm

MT53D512M32D2NP-046WT:D by Micron Technology

MT53D512M32D2NP-046WT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Shape: RECTANGULAR; Self Refresh: YES; Package Body Material: PLASTIC/EPOXY; No. of Words: 536870912 words;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY

2136.7 MHz

COMMON

16,32

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX32

PLASTIC/EPOXY

RECTANGULAR

.8 mm

YES

16,32

1.95 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

10 mm

MT53D1024M32D4DT-046AIT:D by Micron Technology

MT53D1024M32D4DT-046AIT:D

Micron Technology

Micron Technology's MT53D1024M32D4DT-046AIT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

34359738368 bit

LPDDR4 DRAM

32

1

1

200

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53D512M32D2DS-046AUT:D by Micron Technology

MT53D512M32D2DS-046AUT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046AUT:D is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial systems.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53D512M32D2DS-046AIT:D by Micron Technology

MT53D512M32D2DS-046AIT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53D1024M32D4DT-046AUT:D by Micron Technology

MT53D1024M32D4DT-046AUT:D

Micron Technology

Micron Technology's MT53D1024M32D4DT-046AUT:D is a LPDDR4 DRAM with 1GX32 organization, operating at up to 2136.7 MHz clock frequency. It features common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory in automotive electronics.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

34359738368 bit

LPDDR4 DRAM

32

1

1

200

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53D512M32D2DS-046AAT:D by Micron Technology

MT53D512M32D2DS-046AAT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a wide temperature range from -40 to 105°C.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E512M16D1FW-046AIT:D by Micron Technology

MT53E512M16D1FW-046AIT:D

Micron Technology

Micron Technology's MT53E512M16D1FW-046AIT:D is a LPDDR4 DRAM with 512MX16 organization, operating at up to 2136.7 MHz clock frequency. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed and low-power memory solutions in automotive electronics or mobile devices.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

16

1

1

200

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E512M16D1FW-046AAT:D by Micron Technology

MT53E512M16D1FW-046AAT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Width: 16; Sequential Burst Length: 16,32;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

16

1

1

200

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E512M32D2FW-046AUT:D by Micron Technology

MT53E512M32D2FW-046AUT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; No. of Ports: 1;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E512M32D2FW-046AIT:D by Micron Technology

MT53E512M32D2FW-046AIT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS; Sequential Burst Length: 16,32;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E512M64D2HJ-046WT:B by Micron Technology

MT53E512M64D2HJ-046WT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Terminal Form: BALL; Technology: CMOS;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2136.7 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

556

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX64

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E128M16D1DS-046WT:A by Micron Technology

MT53E128M16D1DS-046WT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 128M; Terminal Form: BALL;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E128M32D2FW-046IT:A by Micron Technology

MT53E128M32D2FW-046IT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 10 mm; Memory Width: 32;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E128M32D2FW-046WT:A by Micron Technology

MT53E128M32D2FW-046WT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.17 V; Minimum Operating Temperature: -25 Cel;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B512M32D2NP-062AAT:C by Micron Technology

MT53B512M32D2NP-062AAT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

DUAL BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0033 Amp

410 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B512M32D2NP-062AIT:C by Micron Technology

MT53B512M32D2NP-062AIT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

DUAL BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0025 Amp

400 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1DS-062AIT:C by Micron Technology

MT53B256M32D1DS-062AIT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0025 Amp

400 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1NP-062AAT:C by Micron Technology

MT53B256M32D1NP-062AAT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0033 Amp

410 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1NP-062AIT:C by Micron Technology

MT53B256M32D1NP-062AIT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; No. of Words: 268435456 words;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0025 Amp

400 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E1G32D2FW-046AUT:B by Micron Technology

MT53E1G32D2FW-046AUT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046AUT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 125 °C, and is suitable for applications requiring high-speed synchronous memory.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

34359738368 bit

LPDDR4 DRAM

32

1

1

200

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX32

PLASTIC/EPOXY

TFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M32D2FW-046AAT:B by Micron Technology

MT53E256M32D2FW-046AAT:B

Micron Technology

Micron Technology's MT53E256M32D2FW-046AAT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial devices.

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E1536M32D4DT-046AIT:A by Micron Technology

MT53E1536M32D4DT-046AIT:A

Micron Technology

Micron Technology's MT53E1536M32D4DT-046AIT:A is a LPDDR4 DRAM with 1536MX32 organization, operating at up to 2136.7 MHz clock frequency. It features common I/O type, self-refresh mode, and operates in synchronous mode. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

51539607552 bit

LPDDR4 DRAM

32

1

1

200

1610612736 words

1536M

SYNCHRONOUS

95 Cel

-40 Cel

1536MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M32D2DS-046AUT:B by Micron Technology

MT53E256M32D2DS-046AUT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-046AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a very thin profile package style with 200 terminals and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M32D2FW-046AIT:B by Micron Technology

MT53E256M32D2FW-046AIT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Ports: 1; Minimum Supply Voltage (Vsup): 1.06 V;

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M16D1FW-046AAT:B by Micron Technology

MT53E256M16D1FW-046AAT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA200,12X22,32/25; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

16

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M32D2DS-046AIT:B by Micron Technology

MT53E256M32D2DS-046AIT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-046AIT:B is a 256MX32 LPDDR4 DRAM with a max clock frequency of 2133 MHz. It operates in synchronous mode, has a self-refresh feature, and is commonly used in automotive applications due to its AEC-Q100 screening level.

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M16D1DS-046AIT:B by Micron Technology

MT53E256M16D1DS-046AIT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Terminal Pitch: .8 mm;

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

16

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E768M32D4DT-053WT:E by Micron Technology

MT53E768M32D4DT-053WT:E

Micron Technology

Micron Technology's MT53E768M32D4DT-053WT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 1866 MHz. It features a very thin profile package style and supports multi-bank page burst access mode. Ideal for applications requiring high-speed and low-power memory solutions.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

85 Cel

-25 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E768M64D4HJ-046AAT:A by Micron Technology

MT53E768M64D4HJ-046AAT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Maximum Standby Current: .0032 Amp; Memory Density: 51539607552 bit;

MULTI BANK PAGE BURST

3.5 ns

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

51539607552 bit

LPDDR4 DRAM

64

1

1

556

805306368 words

768M

SYNCHRONOUS

105 Cel

-40 Cel

768MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0032 Amp

320 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E768M64D4HJ-046AIT:A by Micron Technology

MT53E768M64D4HJ-046AIT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

3.5 ns

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

51539607552 bit

LPDDR4 DRAM

64

1

1

556

805306368 words

768M

SYNCHRONOUS

95 Cel

-40 Cel

768MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0032 Amp

320 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E512M64D4HJ-046AAT:D by Micron Technology

MT53E512M64D4HJ-046AAT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Sequential Burst Length: 16,32; Output Characteristics: 3-STATE;

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

556

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0036 Amp

390 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E512M64D4HJ-046AIT:D by Micron Technology

MT53E512M64D4HJ-046AIT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Maximum Clock Frequency (fCLK): 2133 MHz; Output Characteristics: 3-STATE;

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

556

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0036 Amp

390 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E1536M32D4DE-046AIT:B by Micron Technology

MT53E1536M32D4DE-046AIT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Interleaved Burst Length: 16,32; No. of Ports: 1;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

51539607552 bit

LPDDR4 DRAM

32

1

1

200

1610612736 words

1536M

SYNCHRONOUS

95 Cel

-40 Cel

1536MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.14 mm

YES

16,32

.00075 Amp

260 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E1536M32D4DE-046AAT:B by Micron Technology

MT53E1536M32D4DE-046AAT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00075 Amp; Memory Density: 51539607552 bit;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

51539607552 bit

LPDDR4 DRAM

32

1

1

200

1610612736 words

1536M

SYNCHRONOUS

105 Cel

-40 Cel

1536MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.14 mm

YES

16,32

.00075 Amp

260 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E512M64D4NK-046WT:D by Micron Technology

MT53E512M64D4NK-046WT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 366; Package Code: VFBGA; Package Shape: SQUARE; Maximum Supply Current: 360 mA; Additional Features: SELF REFRESH; IT ALSO REQUIRES 1.8V NOM;

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

S-PBGA-B366

15 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

366

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA366,29X29,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

16,32

360 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.5 mm

BOTTOM

15 mm

MT53E512M64D4NK-053WT:D by Micron Technology

MT53E512M64D4NK-053WT:D

Micron Technology

Micron Technology's MT53E512M64D4NK-053WT:D is a LPDDR4 DRAM with 512MX64 organization, operating at 1866 MHz. It features a very thin profile, fine pitch grid array package style and supports multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact devices.

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

16,32

S-PBGA-B366

15 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

366

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA366,29X29,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

16,32

300 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.5 mm

BOTTOM

15 mm

MT53E512M64D4HJ-046AUT:D by Micron Technology

MT53E512M64D4HJ-046AUT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; No. of Words: 536870912 words; Maximum Operating Temperature: 125 Cel;

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

556

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0036 Amp

390 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E2G32D4NQ-046WT:A by Micron Technology

MT53E2G32D4NQ-046WT:A

Micron Technology

Micron Technology's MT53E2G32D4NQ-046WT:A is a LPDDR4 DRAM with 2GX32 organization, 32-bit memory width, and 68719476736-bit memory density. It operates synchronously at temperatures ranging from -25°C to 85°C. Ideal for applications requiring high-speed and low-power memory solutions in compact form factors.

R-PBGA-B

68719476736 bit

LPDDR4 DRAM

32

1

1

2147483648 words

2G

SYNCHRONOUS

85 Cel

-25 Cel

2GX32

PLASTIC/EPOXY

RECTANGULAR

NO

YES

CMOS

BALL

BOTTOM

MT53E256M32D1KS-046AAT:L by Micron Technology

MT53E256M32D1KS-046AAT:L

Micron Technology

Micron Technology's MT53E256M32D1KS-046AAT:L is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 and ISO 26262 screening levels.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

32768

AEC-Q100, ISO 26262

.95 mm

YES

16,32

.0009 Amp

42.3 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm