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DDR DRAM DRAM 112

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT49H32M9BM-25:B by Micron Technology

MT49H32M9BM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H32M9BM-33:B by Micron Technology

MT49H32M9BM-33:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm; Maximum Clock Frequency (fCLK): 300 MHz;

MULTI BANK PAGE BURST

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H32M9FM-25:B by Micron Technology

MT49H32M9FM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 9; Input/Output Type: COMMON;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H32M9FM-33:B by Micron Technology

MT49H32M9FM-33:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 9; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H8M36BM-18:B by Micron Technology

MT49H8M36BM-18:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm; Input/Output Type: COMMON;

MULTI BANK PAGE BURST

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

885 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H8M36BM-25:B by Micron Technology

MT49H8M36BM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm; Package Equivalence Code: BGA144,12X18,40/32;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H8M36BM-25E:B by Micron Technology

MT49H8M36BM-25E:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Functions: 1; Package Style (Meter): GRID ARRAY, THIN PROFILE;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H8M36BM-25IT:B by Micron Technology

MT49H8M36BM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 301989888 bit;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H8M36BM-33:B by Micron Technology

MT49H8M36BM-33:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER; JESD-609 Code: e1;

MULTI BANK PAGE BURST

AUTO REFRESH

333 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

565 mA

1.9 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H8M36BM-33IT:B by Micron Technology

MT49H8M36BM-33IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA144,12X18,40/32;

MULTI BANK PAGE BURST

AUTO REFRESH

333 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

565 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H8M36FM-25:B by Micron Technology

MT49H8M36FM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V; Width: 11 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H8M36FM-25IT:B by Micron Technology

MT49H8M36FM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Sequential Burst Length: 2,4,8;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT44K32M18RB-125F:A by Micron Technology

MT44K32M18RB-125F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Width: 13.5 mm; No. of Words: 33554432 words;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

13.5 mm

MT48H16M32LFB5-75IT:C by Micron Technology

MT48H16M32LFB5-75IT:C

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

536870912 bit

DDR DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8

.00001 Amp

DRAMs

95 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48H32M16LFB4-75IT:C by Micron Technology

MT48H32M16LFB4-75IT:C

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

536870912 bit

DDR DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT49H16M36BM-25:A by Micron Technology

MT49H16M36BM-25:A

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.048 Amp

DRAMs

1100 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H16M18BM-33 by Micron Technology

MT49H16M18BM-33

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Additional Features: AUTO REFRESH; No. of Words Code: 16M;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

260

1.5/1.8,1.8,2.5

Not Qualified

.93 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H16M18CFM-5IT by Micron Technology

MT49H16M18CFM-5IT

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 301989888 bit;

MULTI BANK PAGE BURST

.5 ns

AUTO REFRESH

200 MHz

SEPARATE

2,4,8

R-PBGA-B144

e0

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.5/1.8,1.8,2.5

Not Qualified

.93 mm

.026 Amp

DRAMs

597 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT44K32M36RB-107EIT:A by Micron Technology

MT44K32M36RB-107EIT:A

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 1.42 V;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

-40 Cel

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093EIT:B by Micron Technology

MT44K16M36RB-093EIT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093F:B by Micron Technology

MT44K16M36RB-093F:B

Micron Technology

Micron Technology's MT44K16M36RB-093F:B is a DDR DRAM with 16MX36 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and a memory density of 603979776 bits. Ideal for applications requiring high-speed data processing in compact devices.

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-107E:B by Micron Technology

MT44K16M36RB-107E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Density: 603979776 bit;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-107EIT:B by Micron Technology

MT44K16M36RB-107EIT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093E:B by Micron Technology

MT44K32M18RB-093E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093F:B by Micron Technology

MT44K32M18RB-093F:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Technology: CMOS;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-107E:B by Micron Technology

MT44K32M18RB-107E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

IS43QR16512A-083TBLI by Integrated Silicon Solution

IS43QR16512A-083TBLI

Integrated Silicon Solution

IS43QR16512A-083TBLI by Integrated Silicon Solution is a 512MX16 DDR DRAM with 1200 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200 MHz

COMMON

4,8

R-PBGA-B96

14 mm

8589934592 bit

DDR DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

4,8

.025 Amp

353 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm

IS43QR16512A-083TBL by Integrated Silicon Solution

IS43QR16512A-083TBL

Integrated Silicon Solution

IS43QR16512A-083TBL by Integrated Silicon Solution is a 512MX16 DDR DRAM with 1200 MHz clock frequency, 1.2V supply voltage, and 95°C operating temperature. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in compact electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200 MHz

COMMON

4,8

R-PBGA-B96

14 mm

8589934592 bit

DDR DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

4,8

.025 Amp

353 mA

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm

MT49H16M18CFM-25:B by Micron Technology

MT49H16M18CFM-25:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

11 mm

MT49H16M18CBM-25:B by Micron Technology

MT49H16M18CBM-25:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

11 mm

MT49H16M18CSJ-25:B by Micron Technology

MT49H16M18CSJ-25:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

11 mm

MT49H16M18CSJ-25IT:B by Micron Technology

MT49H16M18CSJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M18SJ-25:B by Micron Technology

MT49H16M18SJ-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Ports: 1; Width: 11 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H16M18SJ-25IT:B by Micron Technology

MT49H16M18SJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M36SJ-18IT:B by Micron Technology

MT49H16M36SJ-18IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

11 mm

MT49H16M36SJ-25:B by Micron Technology

MT49H16M36SJ-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 11 mm; No. of Functions: 1;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

30

11 mm

MT49H16M36SJ-25IT:B by Micron Technology

MT49H16M36SJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CSJ-18:B by Micron Technology

MT49H32M18CSJ-18:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 11 mm; No. of Functions: 1;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H32M18CSJ-25E:B by Micron Technology

MT49H32M18CSJ-25E:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8; Maximum Supply Voltage (Vsup): 1.9 V;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CSJ-25EIT:B by Micron Technology

MT49H32M18CSJ-25EIT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H32M18SJ-18:B by Micron Technology

MT49H32M18SJ-18:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H32M18SJ-25:B by Micron Technology

MT49H32M18SJ-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 33554432 words; Width: 11 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H64M9SJ-25E:B by Micron Technology

MT49H64M9SJ-25E:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

9

1

1

144

67108864 words

64M

SYNCHRONOUS

64MX9

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT44K32M36RB-083F:A by Micron Technology

MT44K32M36RB-083F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Ports: 1; Nominal Supply Voltage / Vsup (V): 1.35;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M36RB-093E:A by Micron Technology

MT44K32M36RB-093E:A

Micron Technology

Micron Technology's MT44K32M36RB-093E:A is a DDR DRAM with 32MX36 organization, operating at 1.35V. It features synchronous mode, multi-bank page burst access, and thin profile grid array package style. Ideal for high-density memory applications requiring fast data processing and low power consumption.

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M36RB-093F:A by Micron Technology

MT44K32M36RB-093F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 1.35; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M36RB-107E:A by Micron Technology

MT44K32M36RB-107E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Terminal Form: BALL; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K64M18RB-083F:A by Micron Technology

MT44K64M18RB-083F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Words: 67108864 words; Minimum Supply Voltage (Vsup): 1.28 V;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

18

1

1

168

67108864 words

64M

SYNCHRONOUS

64MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

13.5 mm