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DDR DRAM DRAM 112

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT44K64M18RB-093E:A by Micron Technology

MT44K64M18RB-093E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Nominal Supply Voltage / Vsup (V): 1.35;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

18

1

1

168

67108864 words

64M

SYNCHRONOUS

64MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K64M18RB-093F:A by Micron Technology

MT44K64M18RB-093F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B168; No. of Words: 67108864 words;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

18

1

1

168

67108864 words

64M

SYNCHRONOUS

64MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K64M18RB-107E:A by Micron Technology

MT44K64M18RB-107E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.28 V; JESD-609 Code: e1;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

18

1

1

168

67108864 words

64M

SYNCHRONOUS

64MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT49H32M9SJ-25:B by Micron Technology

MT49H32M9SJ-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H8M36SJ-25:B by Micron Technology

MT49H8M36SJ-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; No. of Words Code: 8M;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

8MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H8M36SJ-25E:B by Micron Technology

MT49H8M36SJ-25E:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Functions: 1; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

e1

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

8MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

11 mm

MT49H8M36SJ-25IT:B by Micron Technology

MT49H8M36SJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT48H16M32LFB5-75IT:CTR by Micron Technology

MT48H16M32LFB5-75IT:CTR

Micron Technology

Micron Technology's MT48H16M32LFB5-75IT:CTR is a DDR DRAM with 16MX32 organization, 536870912 bit memory density, and 5.4 ns max access time. It is suitable for industrial applications requiring high-speed synchronous operation in a compact grid array package.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

DDR DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT44K16M36RB-093E:B by Micron Technology

MT44K16M36RB-093E:B

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B168; Package Style (Meter): GRID ARRAY, THIN PROFILE;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M36RB-083F:ATR by Micron Technology

MT44K32M36RB-083F:ATR

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT49H16M18CSJ-25IT:BTR by Micron Technology

MT49H16M18CSJ-25IT:BTR

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

MULTI BANK PAGE BURST

AUTO REFRESH; TERM PITCH-MAX

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H16M36SJ-18:BTR by Micron Technology

MT49H16M36SJ-18:BTR

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO REFRESH; TERM PITCH-MAX

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

11 mm

MT49H16M36SJ-18IT:BTR by Micron Technology

MT49H16M36SJ-18IT:BTR

Micron Technology

Micron Technology's MT49H16M36SJ-18IT:BTR is a 16MX36 DDR DRAM with 1.8V supply, operating at -40 to 85°C. It features synchronous operation, industrial temperature grade, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in compact devices.

MULTI BANK PAGE BURST

AUTO REFRESH; TERM PITCH-MAX

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

11 mm

MT49H16M36SJ-25E:BTR by Micron Technology

MT49H16M36SJ-25E:BTR

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

AUTO REFRESH; TERM PITCH-MAX

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

11 mm

MT49H8M36SJ-25E:BTR by Micron Technology

MT49H8M36SJ-25E:BTR

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

MULTI BANK PAGE BURST

AUTO REFRESH; TERM PITCH-MAX

R-PBGA-B144

e1

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

95 Cel

0 Cel

8MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

11 mm

MT49H8M36SJ-25IT:BTR by Micron Technology

MT49H8M36SJ-25IT:BTR

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 8388608 words;

MULTI BANK PAGE BURST

AUTO REFRESH; TERM PITCH-MAX

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm