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MOSFET Gate Drivers

MOSFET gate drivers are electronic components that are used to control and drive the operation of MOSFETs, which are commonly used as switches in electronic circuits. MOSFETs require a voltage applied to the gate terminal to turn them on or off, and MOSFET gate drivers provide this voltage.

MOSFET gate drivers can be classified into several types based on their specific applications and characteristics. Some of the most common types of MOSFET gate drivers include single-channel drivers, half-bridge drivers, and full-bridge drivers.

Single-channel drivers are used to control a single MOSFET, while half-bridge and full-bridge drivers are used to control multiple MOSFETs in various configurations. MOSFET gate drivers typically include a level shifter, a buffer, and a gate driver circuit.

MOSFET gate drivers are critical components of electronic circuits, providing a way to control and drive the operation of MOSFETs. They are used in a wide range of applications, including motor control, power supplies, and inverters.

MOSFET Gate Drivers

Available Parts 708

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Built-in Protections Driver No. of Bits High Side Driver Input Characteristics Interface IC Type JESD-30 Code JESD-609 Code Length Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Channels No. of Functions No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Output Characteristics Output Current Flow Direction Maximum Output Current Nominal Output Peak Current Limit Output Polarity Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Peak Reflow Temperature (C) Power Supplies (V) Qualification Screening Level Maximum Seated Height Sub-Category Maximum Supply Current Maximum Supply Voltage Minimum Supply Voltage Nominal Supply Voltage Maximum Supply Voltage-1 Minimum Supply Voltage-1 Nominal Supply Voltage-1 Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Turn-off Time Turn-on Time Width
2EDN7424RXUMA1 by Infineon Technologies

2EDN7424RXUMA1

Infineon Technologies

2EDN7424RXUMA1 by Infineon Technologies is a MOSFET Gate Driver with a supply voltage range of 4.5V to 20V, featuring a turn-on/off time of 0.025 us. This driver, in small outline package style, is ideal for applications requiring fast switching speeds and precise control in electronic circuits.

NO

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-G8

e4

3 mm

2A

1

8

PLASTIC/EPOXY

HTSSOP

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

1.04 mm

20 V

4.5 V

12 V

YES

NICKEL PALLADIUM GOLD SILVER

GULL WING

.65 mm

DUAL

.025 us

.025 us

3 mm

1EDI20I12MHXUMA1 by Infineon Technologies

1EDI20I12MHXUMA1

Infineon Technologies

BUFFER OR INVERTER BASED IGBT DRIVER; Temperature Grade: AUTOMOTIVE; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

OVER CURRENT; UNDER VOLTAGE

BUFFER OR INVERTER BASED IGBT DRIVER

R-PDSO-G8

7.5 mm

3

1

8

125 Cel

-40 Cel

SOURCE AND SINK

4.4 A

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

2.65 mm

17 V

3.1 V

5 V

18 V

13 V

15 V

YES

AUTOMOTIVE

NICKEL GOLD PALLADIUM SILVER

GULL WING

1.27 mm

DUAL

.33 us

.33 us

6.3 mm

DGD21042S8-13 by Diodes Incorporated

DGD21042S8-13

Diodes Incorporated

HALF BRIDGE BASED IGBT/MOSFET DRIVER; Temperature Grade: AUTOMOTIVE; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

TRANSIENT

YES

STANDARD

HALF BRIDGE BASED IGBT/MOSFET DRIVER

R-PDSO-G8

e3

4.9 mm

1

8

125 Cel

-40 Cel

PUSH-PULL

SOURCE AND SINK

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

.5 mA

20 V

10 V

15 V

YES

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

30

.22 us

.82 us

3.9 mm

DGD05062FN-7 by Diodes Incorporated

DGD05062FN-7

Diodes Incorporated

HALF BRIDGE BASED MOSFET DRIVER; Temperature Grade: AUTOMOTIVE; Terminal Form: NO LEAD; No. of Terminals: 10; Package Code: HVSON; Package Shape: SQUARE;

YES

STANDARD

HALF BRIDGE BASED MOSFET DRIVER

S-PDSO-N10

e3

3 mm

1

10

125 Cel

-40 Cel

TOTEM-POLE

PLASTIC/EPOXY

HVSON

SOLCC10,.12,20

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

260

.8 mm

14 V

8 V

12 V

YES

AUTOMOTIVE

MATTE TIN

NO LEAD

.5 mm

DUAL

.056 us

.58 us

3 mm

DGD0547FN-7 by Diodes Incorporated

DGD0547FN-7

Diodes Incorporated

HALF BRIDGE BASED MOSFET DRIVER; Temperature Grade: AUTOMOTIVE; Terminal Form: NO LEAD; No. of Terminals: 10; Package Code: HVSON; Package Shape: SQUARE;

YES

STANDARD

HALF BRIDGE BASED MOSFET DRIVER

S-PDSO-N10

e3

3 mm

1

10

125 Cel

-40 Cel

TOTEM-POLE

PLASTIC/EPOXY

HVSON

SOLCC10,.12,20

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

260

.8 mm

14 V

5 V

12 V

YES

AUTOMOTIVE

MATTE TIN

NO LEAD

.5 mm

DUAL

.056 us

.035 us

3 mm

L6498LD by STMicroelectronics

L6498LD

STMicroelectronics

BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER; Terminal Form: GULL WING; No. of Terminals: 14; Package Code: SOP; Package Shape: RECTANGULAR; Technology: BCDMOS;

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER

R-PDSO-G14

8.65 mm

1

14

125 Cel

-40 Cel

2.5 A

TRUE

PLASTIC/EPOXY

SOP

SOP14,.25

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.75 mm

20 V

10 V

15 V

YES

BCDMOS

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

.12 us

.12 us

3.9 mm

NCP81391AMNTXG by Onsemi

NCP81391AMNTXG

Onsemi

NCP81391AMNTXG by Onsemi is a MOSFET Gate Driver with 31 terminals, operating voltage range of 4.5V to 13.2V, and temperature grade suitable for automotive applications. It features high side driver capability, matte tin terminal finish, and compact chip carrier package style ideal for space-constrained designs in automotive electronics.

YES

BUFFER OR INVERTER BASED MOSFET DRIVER

S-PQCC-N31

e3

5 mm

3

1

31

100 Cel

-40 Cel

PLASTIC/EPOXY

HVQCCN

LCC31(UNSPEC)

RECTANGULAR

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

260

1 mm

70 mA

13.2 V

4.5 V

5 V

YES

AUTOMOTIVE

MATTE TIN

NO LEAD

.5 mm

QUAD

30

5 mm

NCP81391MNTXG by Onsemi

NCP81391MNTXG

Onsemi

NCP81391MNTXG by Onsemi is a MOSFET Gate Driver with 31 terminals, operating temperature range of -40 to 100°C, and supply voltage ranging from 4.5V to 13.2V. It is designed for automotive applications requiring high side drivers and features a compact chip carrier package suitable for surface mount assembly.

YES

BUFFER OR INVERTER BASED MOSFET DRIVER

S-PQCC-N31

e3

5 mm

3

31

100 Cel

-40 Cel

PLASTIC/EPOXY

HVQCCN

LCC31(UNSPEC)

RECTANGULAR

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

260

1 mm

70 mA

13.2 V

4.5 V

5 V

YES

AUTOMOTIVE

MATTE TIN

NO LEAD

.5 mm

QUAD

30

5 mm

1EDI05I12AHXUMA1 by Infineon Technologies

1EDI05I12AHXUMA1

Infineon Technologies

1EDI05I12AHXUMA1 by Infineon Technologies is a MOSFET Gate Driver with 8 terminals, operating voltage range of 3.1V to 17V, and built-in protections for over current and under voltage. This rectangular package driver has a turn-on/off time of 0.33us, suitable for automotive applications due to its temperature grade and moisture sensitivity level of 3.

OVER CURRENT; UNDER VOLTAGE

BUFFER OR INVERTER BASED IGBT DRIVER

R-PDSO-G8

7.5 mm

3

1

8

125 Cel

-40 Cel

SOURCE AND SINK

1.3 A

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

2.65 mm

17 V

3.1 V

5 V

35 V

13 V

15 V

YES

AUTOMOTIVE

NICKEL GOLD PALLADIUM SILVER

GULL WING

1.27 mm

DUAL

.33 us

.33 us

6.3 mm

1EDI20H12AHXUMA1 by Infineon Technologies

1EDI20H12AHXUMA1

Infineon Technologies

BUFFER OR INVERTER BASED IGBT DRIVER; Temperature Grade: AUTOMOTIVE; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

OVER CURRENT; UNDER VOLTAGE

NO

BUFFER OR INVERTER BASED IGBT DRIVER

R-PDSO-G8

7.5 mm

3

1

8

125 Cel

-40 Cel

SOURCE AND SINK

4 A

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

2.65 mm

17 V

3.1 V

5 V

35 V

13 V

15 V

YES

AUTOMOTIVE

NICKEL GOLD PALLADIUM SILVER

GULL WING

1.27 mm

DUAL

.33 us

.33 us

6.3 mm

1EDI20I12AHXUMA1 by Infineon Technologies

1EDI20I12AHXUMA1

Infineon Technologies

1EDI20I12AHXUMA1 by Infineon Technologies is a MOSFET Gate Driver with 8 terminals, operating voltage range of 3.1V to 17V, and built-in protections for over current and under voltage. It has a turn-on/off time of 0.33us, suitable for automotive applications due to its small outline package style and dual terminal position.

OVER CURRENT; UNDER VOLTAGE

BUFFER OR INVERTER BASED IGBT DRIVER

R-PDSO-G8

7.5 mm

3

1

8

125 Cel

-40 Cel

SOURCE AND SINK

4 A

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

2.65 mm

17 V

3.1 V

5 V

35 V

13 V

15 V

YES

AUTOMOTIVE

NICKEL GOLD PALLADIUM SILVER

GULL WING

1.27 mm

DUAL

.33 us

.33 us

6.3 mm

PE29102A-X by Psemi

PE29102A-X

Psemi

PE29102A-X by Psemi is a MOSFET Gate Driver with 16 terminals, operating at -40 to 105 °C. It features a max supply voltage of 6 V and a very thin profile package style. Ideal for industrial applications requiring a CMOS technology-based half-bridge MOSFET driver with standard input characteristics.

YES

STANDARD

HALF BRIDGE BASED MOSFET DRIVER

R-PBGA-B16

2.04 mm

1

16

105 Cel

-40 Cel

3-STATE

PLASTIC/EPOXY

VFBGA

BGA16,4X5,16

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.318 mm

11.6 mA

6 V

4 V

5 V

6 V

4 V

5 V

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

NOT SPECIFIED

1.64 mm

DGD23892S28-13 by Diodes Incorporated

DGD23892S28-13

Diodes Incorporated

DGD23892S28-13 by Diodes Inc. is a MOSFET gate driver with built-in protections for transient, over current, and under voltage. It features a matte tin terminal finish and supports half bridge based IGBT/MOSFET drivers. With source and sink output current flow direction, it is ideal for applications requiring reliable gate driving in high-power systems.

TRANSIENT; OVER CURRENT; UNDER VOLTAGE

HALF BRIDGE BASED IGBT/MOSFET DRIVER

e3

SOURCE AND SINK

260

MATTE TIN

30

UCC21520AQDWQ1 by Texas Instruments

UCC21520AQDWQ1

Texas Instruments

UCC21520AQDWQ1 by Texas Instruments is a MOSFET gate driver with 2 channels, 6A output current, and under-voltage protection. Ideal for automotive applications, it operates b/w -40 to 125°C, has a supply voltage range of 3-18V, and features a half-bridge IGBT/MOSFET driver interface.

UNDER VOLTAGE

YES

HALF BRIDGE BASED IGBT/MOSFET DRIVER

R-PDSO-G16

e4

10.3 mm

3

2

1

16

125 Cel

-40 Cel

SOURCE AND SINK

6 A

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

260

AEC-Q100

2.65 mm

18 V

3 V

3.3 V

25 V

6.5 V

12 V

YES

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

.03 us

.03 us

7.5 mm

HIP2104FRAANZ-T7A by Renesas Electronics

HIP2104FRAANZ-T7A

Renesas Electronics

HALF BRIDGE BASED MOSFET DRIVER; Terminal Form: NO LEAD; No. of Terminals: 12; Package Code: HVSON; Package Shape: SQUARE; No. of Functions: 1;

YES

HALF BRIDGE BASED MOSFET DRIVER

S-PDSO-N12

e3

4 mm

3

1

12

125 Cel

-40 Cel

2 A

TRUE

PLASTIC/EPOXY

HVSON

SOLCC12,.16,20

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

260

1 mm

1.04 mA

50 V

5 V

18 V

14 V

4.5 V

12 V

YES

MATTE TIN

NO LEAD

.5 mm

DUAL

.039 us

.037 us

4 mm

NCP81156MNTBG by Onsemi

NCP81156MNTBG

Onsemi

HALF BRIDGE BASED MOSFET DRIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 8; Package Code: HVSON; Package Shape: SQUARE;

YES

HALF BRIDGE BASED MOSFET DRIVER

S-PDSO-N8

e3

3 mm

1

1

8

125 Cel

-10 Cel

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE

260

1 mm

13.2 V

4.5 V

12 V

YES

OTHER

MATTE TIN

NO LEAD

.5 mm

DUAL

30

.03 us

.03 us

3 mm

STGAP2SM by STMicroelectronics

STGAP2SM

STMicroelectronics

BUFFER OR INVERTER BASED MOSFET DRIVER; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;

BUFFER OR INVERTER BASED MOSFET DRIVER

e4

3

260

NICKEL PALLADIUM GOLD

30

DGD2012S8-13 by Diodes Incorporated

DGD2012S8-13

Diodes Incorporated

HALF BRIDGE BASED MOSFET DRIVER; Temperature Grade: AUTOMOTIVE; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

YES

STANDARD

HALF BRIDGE BASED MOSFET DRIVER

R-PDSO-G8

e3

4.9 mm

1

8

125 Cel

-40 Cel

PUSH-PULL

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

.24 mA

20 V

10 V

15 V

YES

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

30

.33 us

.27 us

3.9 mm

ADUM4138WBRNZ by Analog Devices

ADUM4138WBRNZ

Analog Devices

ADUM4138WBRNZ by Analog Devices is a MOSFET Gate Driver with 28 terminals, operating voltage range of 6-25V, and AEC-Q100 screening for automotive applications. It features high side driver, turn-on time of 130us, and turn-off time of 121us. Ideal for automotive systems requiring reliable gate driving in harsh environments.

YES

BUFFER OR INVERTER BASED IGBT DRIVER

R-PDSO-G28

10.3 mm

3

1

28

125 Cel

-40 Cel

6 A

PLASTIC/EPOXY

SSOP

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

260

AEC-Q100

2.65 mm

25 V

6 V

12 V

25 V

12 V

16 V

YES

AUTOMOTIVE

GULL WING

.65 mm

DUAL

30

121 us

130 us

7.5 mm

ADUM4121-1TRIZ-EP by Analog Devices

ADUM4121-1TRIZ-EP

Analog Devices

ADUM4121-1TRIZ-EP by Analog Devices is a MOSFET Gate Driver with 8 terminals, operating voltage range of 2.5V to 35V, and turn-on time of 0.042 us. Ideal for military applications due to its MILITARY temperature grade, it features a CMOS technology and high side driver capability.

YES

BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER

R-PDSO-G8

e4

7.5 mm

3

1

8

125 Cel

-55 Cel

2.3 A

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

260

2.65 mm

6.5 V

2.5 V

5 V

35 V

7.5 V

15 V

YES

CMOS

MILITARY

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

.053 us

.042 us

5.85 mm

ADUM4137WBRNZ by Analog Devices

ADUM4137WBRNZ

Analog Devices

ADUM4137WBRNZ by Analog Devices is a MOSFET Gate Driver with 28 terminals, suitable for high side driving applications. It operates at supply voltages ranging from 4.5V to 25V and offers a turn-on time of 0.131 us and turn-off time of 0.137 us. The package style is small outline, shrink pitch, making it ideal for compact designs in automotive electronics.

YES

BUFFER OR INVERTER BASED IGBT DRIVER

R-PDSO-G28

10.3 mm

3

1

28

6 A

PLASTIC/EPOXY

SSOP

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

260

AEC-Q100

2.65 mm

25 V

4.5 V

12 V

25 V

12 V

15 V

YES

GULL WING

.65 mm

DUAL

.137 us

.131 us

7.5 mm

DRV3245AEPHPRQ1 by Texas Instruments

DRV3245AEPHPRQ1

Texas Instruments

DRV3245AEPHPRQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 45V, suitable for automotive applications. It features a high side driver and interface IC type as half bridge based MOSFET driver. With a package style including flatpack and thin profile, it operates in temperatures ranging from -40 to 150°C.

YES

HALF BRIDGE BASED MOSFET DRIVER

S-PQFP-G48

e4

7 mm

3

1

48

150 Cel

-40 Cel

1 A

PLASTIC/EPOXY

HTFQFP

SQUARE

FLATPACK, HEAT SINK/SLUG, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

45 V

4.5 V

45 V

4.5 V

YES

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

QUAD

30

7 mm

A4918KJPTR-3-T by Allegro MicroSystems

A4918KJPTR-3-T

Allegro MicroSystems

Allegro MicroSystems' A4918KJPTR-3-T is a MOSFET gate driver with 48 terminals, suitable for automotive applications. It operates b/w -40°C to 150°C and supports a supply voltage range of 4.5V to 50V. This half bridge-based driver comes in a rectangular package with gull wing terminals, making it ideal for high side driving in automotive systems.

YES

HALF BRIDGE BASED MOSFET DRIVER

R-PQFP-G48

2

1

48

150 Cel

-40 Cel

PLASTIC/EPOXY

HQFP

RECTANGULAR

FLATPACK, HEAT SINK/SLUG

AEC-Q100

50 V

4.5 V

YES

AUTOMOTIVE

GULL WING

QUAD

DRV3245BEPHPRQ1 by Texas Instruments

DRV3245BEPHPRQ1

Texas Instruments

DRV3245BEPHPRQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 45V, suitable for automotive applications. It features a terminal finish of Ni/Pd/Au and operates in temperatures ranging from -40 to 150°C. With a nominal output peak current limit of 1A, it is designed for high side driver applications.

YES

HALF BRIDGE BASED MOSFET DRIVER

S-PQFP-G48

e4

7 mm

3

1

48

150 Cel

-40 Cel

1 A

PLASTIC/EPOXY

HTFQFP

SQUARE

FLATPACK, HEAT SINK/SLUG, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

45 V

4.5 V

45 V

4.5 V

YES

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

QUAD

30

7 mm

UCC21540ADWK by Texas Instruments

UCC21540ADWK

Texas Instruments

UCC21540ADWK by Texas Instruments is a MOSFET gate driver with 2 channels, capable of driving high side and low side drivers. It operates at temperatures ranging from -40 to 125°C, with a supply voltage range of 3-18V. With a compact rectangular package style and dual terminal position, it is ideal for automotive applications requiring precise control over MOSFETs or IGBTs.

YES

HALF BRIDGE BASED IGBT/MOSFET DRIVER

R-PDSO-G14

e4

10.3 mm

2

2

1

14

125 Cel

-40 Cel

6 A

6 A

PLASTIC/EPOXY

SOP

SOP14/16,.4

RECTANGULAR

SMALL OUTLINE

260

2.65 mm

5.5 V

3 V

3.3 V

18 V

6 V

12 V

YES

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

.04 us

.04 us

7.5 mm

1SP0635V2M1-33 by Power Integrations

1SP0635V2M1-33

Power Integrations

BUFFER OR INVERTER BASED IGBT DRIVER; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

BUFFER OR INVERTER BASED IGBT DRIVER

NOT SPECIFIED

NOT SPECIFIED

MCP1401T-E/OTVAO by Microchip Technology

MCP1401T-E/OTVAO

Microchip Technology

MCP1401T-E/OTVAO by Microchip is a MOSFET Gate Driver with 18V max supply voltage, AEC-Q100 screening level, and -40 to 125°C operating temperature range. Ideal for automotive applications, it features a small outline package style, inverted output polarity, and Schmitt trigger input characteristics.

INVERTED OUTPUT

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-G5

2.9 mm

1

5

125 Cel

-40 Cel

TOTEM-POLE

.5 A

INVERTED

PLASTIC/EPOXY

LSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

AEC-Q100; TS 16949

1.45 mm

1.1 mA

18 V

4.5 V

18 V

4.5 V

YES

AUTOMOTIVE

GULL WING

.95 mm

DUAL

.079 us

.081 us

1.55 mm

MCP1404-E/SNVAO by Microchip Technology

MCP1404-E/SNVAO

Microchip Technology

MCP1404-E/SNVAO by Microchip is a MOSFET Gate Driver with 18V max supply voltage, AEC-Q100 screening level, and -40 to 125°C operating temperature range. Ideal for automotive applications, it features 2 functions, totem-pole output characteristics, and Schmitt trigger input for precise control in compact small outline package.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-G8

e3

4.9 mm

2

8

125 Cel

-40 Cel

TOTEM-POLE

4.5 A

TRUE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

AEC-Q100; TS 16949

1.75 mm

3 mA

18 V

4.5 V

18 V

4.5 V

YES

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

.105 us

.105 us

3.9 mm

MCP1404T-E/SNVAO by Microchip Technology

MCP1404T-E/SNVAO

Microchip Technology

MCP1404T-E/SNVAO by Microchip: MOSFET Gate Driver with 18V max supply voltage, AEC-Q100 screening level. Ideal for automotive applications, featuring 2 functions, totem-pole output polarity, and 4.5A peak current limit.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-G8

e3

4.9 mm

2

8

125 Cel

-40 Cel

TOTEM-POLE

4.5 A

TRUE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

AEC-Q100; TS 16949

1.75 mm

3 mA

18 V

4.5 V

18 V

4.5 V

YES

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

.105 us

.105 us

3.9 mm

MCP1406-E/MFVAO by Microchip Technology

MCP1406-E/MFVAO

Microchip Technology

MCP1406-E/MFVAO by Microchip Technology is a MOSFET Gate Driver with 18V max supply voltage, AEC-Q100 screening level, and -40 to 125 °C operating temperature. Ideal for automotive applications, it features a totem-pole output polarity and Schmitt trigger input characteristics for precise control in compact dimensions of 6mm x 5mm.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-N8

e3

6 mm

1

8

125 Cel

-40 Cel

TOTEM-POLE

6 A

INVERTED

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

AEC-Q100; TS 16949

1 mm

.5 mA

18 V

4.5 V

18 V

4.5 V

YES

AUTOMOTIVE

MATTE TIN

NO LEAD

1.27 mm

DUAL

.105 us

.105 us

5 mm

MCP1415T-E/OTVAO by Microchip Technology

MCP1415T-E/OTVAO

Microchip Technology

MCP1415T-E/OTVAO by Microchip is a MOSFET Gate Driver with 18V max supply voltage, AEC-Q100 screening level, and -40 to 125°C operating temperature range. Ideal for automotive applications, it features a small outline package style, inverted output polarity, and Schmitt trigger input characteristics.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-G5

e3

2.9 mm

1

5

125 Cel

-40 Cel

TOTEM-POLE

1.5 A

INVERTED

PLASTIC/EPOXY

LSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

AEC-Q100; TS 16949

1.45 mm

1.5 mA

18 V

4.5 V

18 V

4.5 V

YES

AUTOMOTIVE

MATTE TIN

GULL WING

.95 mm

DUAL

.11 us

.119 us

1.55 mm

MCP1416RT-E/OTVAO by Microchip Technology

MCP1416RT-E/OTVAO

Microchip Technology

MCP1416RT-E/OTVAO by Microchip is a MOSFET Gate Driver with 18V max supply voltage, AEC-Q100 screening, and -40 to 125°C operating temp. Ideal for automotive applications, it features a small outline package, Schmitt trigger input characteristics, and 1.5A output peak current limit.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-G5

e3

2.9 mm

1

5

125 Cel

-40 Cel

TOTEM-POLE

1.5 A

TRUE

PLASTIC/EPOXY

LSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

AEC-Q100; TS 16949

1.45 mm

1.5 mA

18 V

4.5 V

18 V

4.5 V

YES

AUTOMOTIVE

MATTE TIN

GULL WING

.95 mm

DUAL

.112 us

.107 us

1.55 mm

MCP1416T-E/OTVAO by Microchip Technology

MCP1416T-E/OTVAO

Microchip Technology

MCP1416T-E/OTVAO by Microchip is a MOSFET Gate Driver with 18V max supply voltage, AEC-Q100 screening level, and -40 to 125°C operating temperature range. Ideal for automotive applications, it features a small outline package with Schmitt trigger input characteristics and 1.5A output peak current limit.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-G5

e3

2.9 mm

1

5

125 Cel

-40 Cel

TOTEM-POLE

1.5 A

TRUE

PLASTIC/EPOXY

LSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

AEC-Q100; TS 16949

1.45 mm

1.5 mA

18 V

4.5 V

18 V

4.5 V

YES

AUTOMOTIVE

MATTE TIN

GULL WING

.95 mm

DUAL

.112 us

.107 us

1.55 mm

MCP14E4T-E/SNVAO by Microchip Technology

MCP14E4T-E/SNVAO

Microchip Technology

MCP14E4T-E/SNVAO by Microchip is a MOSFET gate driver with 2 functions, operating at -40 to 125 °C. It has a max supply voltage of 18 V and output polarity is TRUE. Ideal for automotive applications due to AEC-Q100 screening level and TS 16949 certification.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-G8

e3

4.9 mm

2

8

125 Cel

-40 Cel

TOTEM-POLE

4 A

TRUE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

AEC-Q100; TS 16949

1.75 mm

3 mA

18 V

4.5 V

12 V

18 V

4.5 V

12 V

YES

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

.11 us

.11 us

3.9 mm

MIC4605-1YM-TRVAO by Microchip Technology

MIC4605-1YM-TRVAO

Microchip Technology

MIC4605-1YM-TRVAO by Microchip is a MOSFET gate driver with 16V max supply voltage, AEC-Q100 screening level, and 1A output peak current limit. Ideal for automotive applications due to its high side driver feature and small outline package style. Operating temperature range from -40°C to 125°C makes it suitable for harsh environments.

YES

STANDARD

HALF BRIDGE BASED MOSFET DRIVER

R-PDSO-G8

e3

4.93 mm

1

8

125 Cel

-40 Cel

1 A

TRUE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

AEC-Q100

1.73 mm

.5 mA

16 V

5.25 V

12 V

YES

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

.075 us

.075 us

3.94 mm

TC4427AVOA-VAO by Microchip Technology

TC4427AVOA-VAO

Microchip Technology

TC4427AVOA-VAO by Microchip Technology is a MOSFET gate driver with 2 functions, operating at supply voltages b/w 4.5V to 18V. It features a Schmitt trigger input, totum-pole output, and is designed for automotive applications due to AEC-Q100 screening level.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-G8

e3

4.9 mm

1

2

8

125 Cel

-40 Cel

TOTEM-POLE

1.5 A

TRUE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

260

AEC-Q100; TS 16949

1.75 mm

2 mA

18 V

4.5 V

18 V

4.5 V

YES

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

.09 us

.09 us

3.9 mm

TC4427AVOA713-VAO by Microchip Technology

TC4427AVOA713-VAO

Microchip Technology

TC4427AVOA713-VAO by Microchip Technology is a MOSFET gate driver with 2 functions, operating at supply voltages b/w 4.5V to 18V. It features a totem-pole output configuration and Schmitt trigger input characteristics, making it suitable for automotive applications requiring high side drivers. With a small outline package style and AEC-Q100 screening level, this driver offers fast turn-on/off times of 0.09 us for efficient performance in automotive systems.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-G8

e3

4.9 mm

1

2

8

125 Cel

-40 Cel

TOTEM-POLE

1.5 A

TRUE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

260

AEC-Q100; TS 16949

1.75 mm

2 mA

18 V

4.5 V

18 V

4.5 V

YES

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

.09 us

.09 us

3.9 mm

TC4428VOA713-VAO by Microchip Technology

TC4428VOA713-VAO

Microchip Technology

Microchip TC4428VOA713-VAO is a MOSFET gate driver with 18V max supply voltage, AEC-Q100 screening. It has 2 functions, operates at -40 to 125 °C, and offers 1.5A output peak current limit. Ideal for automotive applications requiring high side drivers with Schmitt trigger input characteristics.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-G8

e3

4.9 mm

1

2

8

125 Cel

-40 Cel

TOTEM-POLE

1.5 A

COMPLEMENTARY

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

260

AEC-Q100; TS 16949

1.75 mm

8 mA

18 V

4.5 V

18 V

4.5 V

YES

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

.1 us

.08 us

3.9 mm

L9945 by STMicroelectronics

L9945

STMicroelectronics

L9945 by STMicroelectronics is a high-performance MOSFET gate driver with a max supply voltage of 36V and operates in extreme temps from -40 °C to 150 °C. It features a compact flatpack design with 64 terminals for efficient integration. Ideal for automotive applications, it ensures reliable performance under AEC-100 standards.

YES

STANDARD

HALF BRIDGE BASED MOSFET DRIVER

S-PQFP-G64

10 mm

3

1

64

150 Cel

-40 Cel

PLASTIC/EPOXY

HTFQFP

TQFP64,.47SQ,20

SQUARE

FLATPACK, HEAT SINK/SLUG, THIN PROFILE, FINE PITCH

AEC-100; TS 16949

1.2 mm

50 mA

36 V

3.8 V

8 V

YES

GULL WING

.5 mm

QUAD

1.5 us

1.5 us

10 mm

1EDI2004ASXUMA1 by Infineon Technologies

1EDI2004ASXUMA1

Infineon Technologies

BUFFER OR INVERTER BASED IGBT DRIVER; Terminal Form: GULL WING; No. of Terminals: 36; Package Code: SSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

NO

BUFFER OR INVERTER BASED IGBT DRIVER

R-PDSO-G36

12.8 mm

3

-4 V

1

36

.02 A

PLASTIC/EPOXY

SSOP

SSOP36,.4

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

AEC-Q100

2.65 mm

5.5 V

4.65 V

5 V

18 V

13.5 V

16.5 V

YES

NICKEL GOLD PALLADIUM SILVER

GULL WING

.65 mm

DUAL

.255 us

.255 us

7.6 mm

MCP14A0305-E/MS by Microchip Technology

MCP14A0305-E/MS

Microchip Technology

MCP14A0305-E/MS by Microchip is a MOSFET gate driver with 2 functions, operating voltage of 4.5-18V, and output polarity as complementary. Ideal for automotive applications due to its TS 16949 screening level, Schmitt trigger input characteristics, and totem-pole output configuration. It features a small outline package style with dimensions of 3x3mm and gull wing terminal form.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

S-PDSO-G8

3 mm

2

8

125 Cel

-40 Cel

TOTEM-POLE

3 A

COMPLEMENTARY

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TS 16949

1.1 mm

1.1 mA

18 V

4.5 V

18 V

4.5 V

YES

AUTOMOTIVE

GULL WING

.65 mm

DUAL

.05 us

.046 us

3 mm

MCP14A0902T-E/MS by Microchip Technology

MCP14A0902T-E/MS

Microchip Technology

MCP14A0902T-E/MS by Microchip is a MOSFET Gate Driver with 18V max supply voltage, TS 16949 screening level, and -40 to 125 °C operating temperature. Ideal for automotive applications, it features a small outline package style, true output polarity, and Schmitt trigger input characteristics.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

S-PDSO-G8

3 mm

1

8

125 Cel

-40 Cel

TOTEM-POLE

9 A

TRUE

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TS 16949

1.1 mm

.75 mA

18 V

4.5 V

18 V

4.5 V

YES

AUTOMOTIVE

GULL WING

.65 mm

DUAL

.068 us

.068 us

3 mm

TC4432VOA by Microchip Technology

TC4432VOA

Microchip Technology

TC4432VOA by Microchip Technology is a MOSFET Gate Driver with a max supply voltage of 30V, suitable for automotive applications. It features a small outline package style, Schmitt trigger input characteristics, and a turn-on time of 0.18 us. Ideal for driving high side switches in automotive systems.

YES

SCHMITT TRIGGER

BUFFER OR INVERTER BASED MOSFET DRIVER

R-PDSO-G8

e3

4.9 mm

1

1

8

125 Cel

-40 Cel

TOTEM-POLE

3 A

TRUE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

TS 16949

1.75 mm

6 mA

30 V

4.5 V

30 V

4.5 V

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

.16 us

.18 us

3.9 mm

MIC5019YFT-T5 by Microchip Technology

MIC5019YFT-T5

Microchip Technology

MIC5019YFT-T5 by Microchip Technology is a MOSFET Gate Driver with 4 terminals, operating voltage range of 2.7V to 9V, and automotive temperature grade up to 125°C. It features a high side driver in a square package suitable for various applications requiring buffer or inverter based MOSFET driving in tight spaces.

YES

BUFFER OR INVERTER BASED MOSFET DRIVER

S-XQCC-N4

e4

1.2 mm

1

4

125 Cel

-40 Cel

UNSPECIFIED

VQCCN

SQUARE

CHIP CARRIER, VERY THIN PROFILE

.6 mm

9 V

2.7 V

3.3 V

YES

AUTOMOTIVE

NICKEL PALLADIUM GOLD

NO LEAD

.65 mm

QUAD

1.2 mm

NXV04V120DB1 by Onsemi

NXV04V120DB1

Onsemi

The Onsemi NXV04V120DB1 is a MOSFET Gate Driver with AEC-Q100 screening. It features a turn-on time of 0.102 us and turn-off time of 0.091 us, suitable for automotive applications. This full bridge based driver operates b/w -40 to 150 °C, making it ideal for high-temperature environments in vehicles.

FULL BRIDGE BASED MOSFET DRIVER

R-PDIP-T19

44 mm

1

19

150 Cel

-40 Cel

PLASTIC/EPOXY

HDIP

RECTANGULAR

IN-LINE, HEAT SINK/SLUG

AEC-Q100

5.2 mm

NO

AUTOMOTIVE

THROUGH-HOLE

2.54 mm

DUAL

.091 us

.102 us

29 mm

VN7004CLH by STMicroelectronics

VN7004CLH

STMicroelectronics

STMicroelectronics' VN7004CLH is a MOSFET gate driver with 8 terminals, operating voltage range of 4-28V, and AEC-Q100 screening. It has high side driver, true output polarity, and turn-on/off times of 120/100µs. Ideal for automotive applications due to its compact size (6.5mm x 6.1mm) and wide temperature range (-40 to 150°C).

YES

STANDARD

BUFFER OR INVERTER BASED PERIPHERAL DRIVER

R-PSSO-G8

e3

6.5 mm

3

1

8

150 Cel

-40 Cel

TRUE

PLASTIC/EPOXY

SMSIP8H,.39,34TB

RECTANGULAR

260

AEC-Q100

2.55 mm

28 V

4 V

13 V

YES

MATTE TIN

GULL WING

.85 mm

SINGLE

100 us

120 us

6.1 mm

TC4469EOE713 by Microchip Technology

TC4469EOE713

Microchip Technology

Microchip Technology's TC4469EOE713 is a MOSFET gate driver with 4 functions, operating at -40 to 85 °C. It has a supply voltage range of 4.5-18 V and peak current limit of 1.2 A. Ideal for industrial applications requiring inverted output polarity and fast turn-on/off times.

NO

STANDARD

AND GATE BASED MOSFET DRIVER

R-PDSO-G16

e3

10.3 mm

4

16

85 Cel

-40 Cel

1.2 A

INVERTED

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

TS 16949

2.64 mm

8 mA

18 V

4.5 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

.15 us

.15 us

7.49 mm

FDMF6840C-F013 by Onsemi

FDMF6840C-F013

Onsemi

FDMF6840C-F013 by Onsemi is a MOSFET gate driver with 40 terminals, operating at -40 to 125 °C. It has a max supply voltage of 5.5 V and is designed for automotive applications requiring a half-bridge based MOSFET driver in a square package shape.

YES

HALF BRIDGE BASED MOSFET DRIVER

S-XQCC-N40

e3

6 mm

1

1

40

125 Cel

-40 Cel

UNSPECIFIED

HQCCN

LCC40,.24SQ,20

SQUARE

CHIP CARRIER, HEAT SINK/SLUG

260

1.1 mm

5.5 V

4.5 V

5 V

5.5 V

4.5 V

5 V

YES

AUTOMOTIVE

Matte Tin (Sn) - annealed

NO LEAD

.5 mm

QUAD

30

6 mm