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DGD23892S28-13

Diodes Incorporated

DGD23892S28-13 by Diodes Incorporated

DGD23892S28-13 by Diodes Inc. is a MOSFET gate driver with built-in protections for transient, over current, and under voltage. It features a matte tin terminal finish and supports half bridge based IGBT/MOSFET drivers. With source and sink output current flow direction, it is ideal for applications requiring reliable gate driving in high-power systems.

Median Price

$1.875

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 659 parts In-Stock

1+ parts

$1.875

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$0.694

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$0.525

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659

$1.875

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$0.525

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Vyrian

USA . 3,322 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 659 parts In-Stock

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659

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Dan-Mar Components

USA . 659 parts In-Stock

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659

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Nova Conductors

Japan . 65 parts In-Stock

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65

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 439 parts In-Stock

1+ parts

$9.906

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439

$9.906

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Ampacity Inc.

Singapore . 239 parts In-Stock

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$43.500

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239

$43.500

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Continental Prestige Electronics

USA . 3,388 parts In-Stock

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Argo Parts USA

USA . 3,116 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Microchip USA

USA . 257 parts In-Stock

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Overview

Elevate your device performance with the DGD23892S28-13 by Diodes Incorporated. This cutting-edge MOSFET Gate Driver boasts built-in protections for transient, over current, and under voltage, ensuring optimal operation and longevity. With a matte tin terminal finish and peak reflow temperature of 260°C, this driver excels in reliability and durability. Perfect for half bridge based IGBT/MOSFET applications, the DGD23892S28-13 delivers unmatched value and benefits to customers seeking high-quality, efficient solutions for their electronic systems. Upgrade your technology today with Diodes Incorporated.

Feature Benefit Bullets

Built-in Protections: TRANSIENT; OVER CURRENT; UNDER VOLTAGE

These built-in protections provide added safety and reliability, making this MOSFET gate driver a great choice for protecting the circuit from potential faults.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures a durable and reliable connection, adding to the longevity and performance of this gate driver.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this gate driver is easy to integrate into manufacturing processes, saving time and effort during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering of the gate driver, contributing to its overall robustness and performance.

Interface IC Type: HALF BRIDGE BASED IGBT/MOSFET DRIVER

The half-bridge based IGBT/MOSFET driver interface IC type allows for efficient control and operation of MOSFETs, making it ideal for high-performance applications.

Output Current Flow Direction: SOURCE AND SINK

The bidirectional current flow capability of sourcing and sinking makes this gate driver versatile and suitable for various circuit designs.

Technical Specifications

MOSFET Gate Drivers DGD23892S28-13 attributes and parameters. Explore more MOSFET Gate Drivers devices from Diodes Incorporated

Specs

Built-in Protections:

TRANSIENT; OVER CURRENT; UNDER VOLTAGE

JESD-609 Code:

e3

Output Current Flow Direction:

SOURCE AND SINK

Peak Reflow Temperature (C):

260

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DGD23892S28-13 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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