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FLAT Transient Suppression Devices 248

Transient Suppression Devices
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Minimum Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
SMA6F11A by STMicroelectronics

SMA6F11A

STMicroelectronics

SMA6F11A by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 600 W, operates b/w -55 °C to 175 °C, and has a breakdown voltage range of 12.3-13.7 V. This device is perfect for applications requiring robust surge protection in compact designs.

13.7 V

12.3 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

11 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F154A by STMicroelectronics

SMA6F154A

STMicroelectronics

SMA6F154A by STMicroelectronics is a unidirectional transient voltage suppressor diode, ideal for protecting sensitive electronics. It features a max reverse power dissipation of 600 W, operates b/w -55 °C to 175 °C, and has a breakdown voltage range of 171-189 V. This device is suitable for applications requiring robust surge protection in compact designs.

189 V

171 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2

154 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F15A by STMicroelectronics

SMA6F15A

STMicroelectronics

SMA6F15A by STMicroelectronics is a unidirectional transient voltage suppressor diode, ideal for protecting sensitive electronics. It features a max reverse power dissipation of 600 W, operates b/w -55 °C to 175 °C, and has a breakdown voltage range of 16.7-18.5 V. This device is perfect for applications requiring robust surge protection in compact designs.

18.5 V

16.7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

15 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F18A by STMicroelectronics

SMA6F18A

STMicroelectronics

SMA6F18A by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection in electronic circuits. It features a max reverse power dissipation of 600 W, operates b/w -55 °C to 175 °C, and has a breakdown voltage range of 20-22.2 V. Ideal for safeguarding sensitive components against voltage spikes, it meets IEC-61000-4-2 standards.

22.2 V

20 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

18 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F20A by STMicroelectronics

SMA6F20A

STMicroelectronics

SMA6F20A by STMicroelectronics is a unidirectional transient voltage suppressor diode, ideal for protecting sensitive electronics. It features a max reverse power dissipation of 600 W, operates b/w -55 °C to 175 °C, and has a breakdown voltage range of 22.2-24.6 V. This device is perfect for applications requiring robust surge protection in compact designs.

24.6 V

22.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

20 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F22A by STMicroelectronics

SMA6F22A

STMicroelectronics

SMA6F22A by STMicroelectronics is a unidirectional transient voltage suppressor diode, ideal for protecting sensitive electronics. It features a max reverse power dissipation of 600 W and operates b/w -55 °C to 175 °C. With a breakdown voltage range of 24.4-27 V, it's perfect for robust circuit protection applications.

27 V

24.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

22 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F23A by STMicroelectronics

SMA6F23A

STMicroelectronics

SMA6F23A by STMicroelectronics is a unidirectional avalanche diode with 600W peak power dissipation. It operates b/w -55°C to 175°C, with breakdown voltage ranging from 25.7V to 28.4V. Ideal for transient suppression in electronics, meeting IEC-61000-4-2 standards.

28.4 V

25.7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

23 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F24A by STMicroelectronics

SMA6F24A

STMicroelectronics

SMA6F24A by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 600 W, operates b/w -55 °C to 175 °C, and has a breakdown voltage range of 26.7-29.5 V. This device is perfect for applications requiring robust surge protection in compact designs.

29.5 V

26.7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

24 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F28A by STMicroelectronics

SMA6F28A

STMicroelectronics

SMA6F28A by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection in electronic circuits. It features a max reverse power dissipation of 600 W, operates b/w -55 °C to 175 °C, and has a breakdown voltage range of 31.1-34.3 V. Ideal for safeguarding sensitive components against voltage spikes, it meets IEC-61000-4-2 standards.

34.3 V

31.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

28 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F30A by STMicroelectronics

SMA6F30A

STMicroelectronics

SMA6F30A by STMicroelectronics is a unidirectional avalanche diode with a breakdown voltage of 36.8V, ideal for transient suppression applications. With a max power dissipation of 600W and operating temperature range from -55 to 175°C, it offers reliable protection in various electronic circuits. This surface-mount device follows the IEC-61000-4-2 standard and features a small outline package suitable for compact designs.

36.8 V

33.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

30 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F31A by STMicroelectronics

SMA6F31A

STMicroelectronics

SMA6F31A by STMicroelectronics is a single-configured transient suppression device with a max non-repetitive peak reverse power dissipation of 600W. It is used for voltage suppression in applications such as IEC-61000-4-2 reference standard compliance and protection against transient voltage spikes.

37.8 V

34.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

31 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F33A by STMicroelectronics

SMA6F33A

STMicroelectronics

SMA6F33A by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection in electronic circuits. It features a max reverse power dissipation of 600 W, operates b/w -55 °C to 175 °C, and has a breakdown voltage range of 36.7-40.5 V. Ideal for safeguarding sensitive components against voltage spikes, it meets IEC-61000-4-2 standards.

40.5 V

36.7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

33 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F36A by STMicroelectronics

SMA6F36A

STMicroelectronics

SMA6F36A by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection in electronic circuits. It features a max reverse power dissipation of 600 W, operates b/w -55 °C to 175 °C, and has a breakdown voltage range of 40-44.2 V. Ideal for safeguarding sensitive components against voltage spikes, it meets IEC-61000-4-2 standards.

44.2 V

40 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

36 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

SMA6F85A by STMicroelectronics

SMA6F85A

STMicroelectronics

SMA6F85A by STMicroelectronics is a unidirectional avalanche diode with 85V peak reverse voltage and 600W power dissipation. Ideal for transient suppression in electronic circuits, it operates b/w -55°C to 175°C, meeting IEC-61000-4-2 standards.

105 V

95 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-221AC

R-PDSO-F2

e3

1

600 W

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

UNIDIRECTIONAL

IEC-61000-4-2

85 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

ESD7361XV2T5G by Onsemi

ESD7361XV2T5G

Onsemi

ESD7361XV2T5G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 16V max repetitive peak reverse voltage and 34V max clamping voltage. It operates b/w -55 to 125 °C, complies with IEC-61000-4-2, 4-4, 4-5 standards, and is ideal for transient suppression in electronic circuits.

LOW CAPACITANCE, ULTRA LOW CAPACITANCE

16.5 V

34 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5; ISO 10605

16 V

1 uA

15 V

YES

AVALANCHE

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SZESD7351XV2T5G by Onsemi

SZESD7351XV2T5G

Onsemi

SZESD7351XV2T5G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 3.3V reverse test voltage and 10V max clamping voltage. It is designed for transient suppression applications in automotive electronics, meeting AEC-Q101 and IEC-61000-4-2, 4-5 standards. The device operates b/w -55 to 150 °C with a small outline package style suitable for surface mount assembly.

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

5 V

10 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.15 W

AEC-Q101; IEC-61000-4-2, 4-5

3.3 V

.05 uA

3.3 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SZESD7361XV2T5G by Onsemi

SZESD7361XV2T5G

Onsemi

SZESD7361XV2T5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max reverse current of 1 uA and a min breakdown voltage of 16.5 V. It is designed for transient suppression applications in electronics, offering high reliability with an operating temperature range from -55 to 125 °C.

LOW CAPACITANCE, ULTRA LOW CAPACITANCE

16.5 V

34 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-2, 4-4, 4-5; ISO 10605

16 V

1 uA

15 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SZESD7371XV2T5G by Onsemi

SZESD7371XV2T5G

Onsemi

SZESD7371XV2T5G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 20V. It operates in temperatures ranging from -55 to 150 °C and has a reverse test voltage of 5.3V. Ideal for transient suppression applications, this device meets AEC-Q101 and IEC-61000-4-2, 4-5 standards.

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

7 V

20 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.3 W

AEC-Q101; IEC-61000-4-2, 4-5

5.3 V

.05 uA

5.3 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

DFLT16AQ-7 by Diodes Incorporated

DFLT16AQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

19.7 V

17.8 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

225 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101

16 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

DFLT26AQ-7 by Diodes Incorporated

DFLT26AQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

31.9 V

28.9 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

225 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101

26 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

SMPC51ANHM3/H by Vishay Intertechnology

SMPC51ANHM3/H

Vishay Intertechnology

Vishay Intertechnology's SMPC51ANHM3/H is a single-config transient suppression device with 1500W power dissipation, ideal for protecting circuits. With a breakdown voltage of 59.7V and max clamping voltage of 82.4V, it ensures reliable performance in various applications. This AEC-Q101 compliant diode features avalanche technology and is suitable for automotive electronics due to its high reliability and wide operating temperature range from -55°C to 150°C.

EXCELLENT CLAMPING CAPABILITY

62.7 V

56.7 V

59.7 V

CATHODE

82.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

TO-277A

R-PDSO-F3

e3

1

1500 W

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1.25 W

AEC-Q101

51 V

1 uA

51 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF4L12A-Q by Bourns

SMF4L12A-Q

Bourns

The Bourns SMF4L12A-Q is a single avalanche diode with 400W peak power dissipation, ideal for transient suppression in automotive applications. With a breakdown voltage range of 13.3V to 14.7V, it offers unidirectional protection at temperatures from -55°C to 150°C. AEC-Q101 compliant, this surface-mount device has a flat terminal finish and dual position for reliable performance.

14.7 V

13.3 V

14 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

AEC-Q101

12 V

1 uA

12 V

YES

AVALANCHE

TIN

FLAT

DUAL

SMF4L43A-Q by Bourns

SMF4L43A-Q

Bourns

Bourns SMF4L43A-Q is a unidirectional avalanche diode with 400W peak power dissipation, ideal for transient suppression in automotive applications. With a breakdown voltage range of 47.8V to 52.8V and AEC-Q101 compliance, it operates b/w -55°C to 150°C, making it suitable for harsh environments. This single-configured diode has a flat terminal finish and is surface mountable with two terminals.

52.8 V

47.8 V

50.3 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

AEC-Q101

43 V

1 uA

43 V

YES

AVALANCHE

TIN

FLAT

DUAL

DTVS20SP4UR-7 by Diodes Incorporated

DTVS20SP4UR-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

24.5 V

22.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1.5 W

20 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

P6SMAJ24ADFQ-13 by Diodes Incorporated

P6SMAJ24ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

30.7 V

26.7 V

28.7 V

38.9 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

24 V

1 uA

24 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ45ADFQ-13 by Diodes Incorporated

P6SMAJ45ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

57.5 V

50 V

53.75 V

72.7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

45 V

1 uA

45 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ85ADFQ-13 by Diodes Incorporated

P6SMAJ85ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

108.2 V

94.4 V

101.3 V

137 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

85 V

1 uA

85 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ20ADFQ-13 by Diodes Incorporated

P6SMAJ20ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

25.5 V

22.2 V

23.85 V

32.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

20 V

1 uA

20 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ22ADFQ-13 by Diodes Incorporated

P6SMAJ22ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

28 V

24.4 V

26.2 V

35.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

22 V

1 uA

22 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ28ADFQ-13 by Diodes Incorporated

P6SMAJ28ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

35.8 V

31.1 V

33.45 V

45.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

28 V

1 uA

28 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ30ADFQ-13 by Diodes Incorporated

P6SMAJ30ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

38.3 V

33.3 V

35.8 V

48.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

30 V

1 uA

30 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ33ADFQ-13 by Diodes Incorporated

P6SMAJ33ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

42.2 V

36.7 V

39.45 V

53.3 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

33 V

1 uA

33 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ36ADFQ-13 by Diodes Incorporated

P6SMAJ36ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

46 V

40 V

43 V

58.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

36 V

1 uA

36 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ43ADFQ-13 by Diodes Incorporated

P6SMAJ43ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

54.9 V

47.8 V

51.35 V

69.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

43 V

1 uA

43 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ48ADFQ-13 by Diodes Incorporated

P6SMAJ48ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

61.3 V

53.3 V

57.3 V

77.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

48 V

1 uA

48 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ58ADFQ-13 by Diodes Incorporated

P6SMAJ58ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

74.6 V

64.4 V

69.5 V

93.6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

58 V

1 uA

58 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ64ADFQ-13 by Diodes Incorporated

P6SMAJ64ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

81.8 V

71.1 V

76.45 V

103 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

64 V

1 uA

64 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ11ADFQ-13 by Diodes Incorporated

P6SMAJ11ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

14.4 V

12.2 V

13.3 V

18.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

11 V

1 uA

11 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ15ADFQ-13 by Diodes Incorporated

P6SMAJ15ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

19.2 V

16.7 V

17.95 V

24.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

15 V

1 uA

15 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ16ADFQ-13 by Diodes Incorporated

P6SMAJ16ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

20.5 V

17.8 V

19.15 V

26 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

16 V

1 uA

16 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ54ADFQ-13 by Diodes Incorporated

P6SMAJ54ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

69 V

60 V

64.5 V

87.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

54 V

1 uA

54 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ60ADFQ-13 by Diodes Incorporated

P6SMAJ60ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

76.7 V

66.7 V

71.7 V

96.8 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

60 V

1 uA

60 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ75ADFQ-13 by Diodes Incorporated

P6SMAJ75ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

95.8 V

83.3 V

89.55 V

121 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

75 V

1 uA

75 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ10ADFQ-13 by Diodes Incorporated

P6SMAJ10ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

12.8 V

11.1 V

11.95 V

17 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

10 V

5 uA

10 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ12ADFQ-13 by Diodes Incorporated

P6SMAJ12ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

15.3 V

13.3 V

14.3 V

19.9 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

12 V

1 uA

12 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ17ADFQ-13 by Diodes Incorporated

P6SMAJ17ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

21.7 V

18.9 V

20.3 V

27.6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

17 V

1 uA

17 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ18ADFQ-13 by Diodes Incorporated

P6SMAJ18ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

23.3 V

20 V

21.65 V

29.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

18 V

1 uA

18 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ26ADFQ-13 by Diodes Incorporated

P6SMAJ26ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

33.2 V

28.9 V

31.05 V

42.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

26 V

1 uA

26 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30