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SMA6F154A

STMicroelectronics

SMA6F154A by STMicroelectronics

SMA6F154A by STMicroelectronics is a unidirectional transient voltage suppressor diode, ideal for protecting sensitive electronics. It features a max reverse power dissipation of 600 W, operates b/w -55 °C to 175 °C, and has a breakdown voltage range of 171-189 V. This device is suitable for applications requiring robust surge protection in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 10,000 parts In-Stock

1+ parts

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10,000

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Vyrian

USA . 7,501 parts In-Stock

1+ parts

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7,501

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Anansix

USA . 2,160 parts In-Stock

1+ parts

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2,160

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Digiode

USA . 364 parts In-Stock

1+ parts

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100+ parts

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364

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,204 parts In-Stock

1+ parts

$0.061

100+ parts

-

1k+ parts

$0.055

10k+ parts

-

2,204

$0.061

-

$0.055

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MKK Technologies

India . 1,905 parts In-Stock

1+ parts

$0.114

100+ parts

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10k+ parts

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1,905

$0.114

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DigiPath Technology Company

USA . 1,905 parts In-Stock

1+ parts

$0.114

100+ parts

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10k+ parts

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1,905

$0.114

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AZTECH Wire

Italy . 1,060 parts In-Stock

1+ parts

$9.320

100+ parts

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1,060

$9.320

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Corphita

USA . 2,230 parts In-Stock

1+ parts

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2,230

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Parana Technologies

USA . 2,036 parts In-Stock

1+ parts

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100+ parts

$0.073

1k+ parts

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10k+ parts

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2,036

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$0.073

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Overview

Elevate your designs with the SMA6F154A from STMicroelectronics, a leader in reliable electronic solutions. This robust transient suppression device offers exceptional protection against voltage spikes, ensuring your applications run smoothly and safely. With its compact surface-mount design and high-temperature resilience, it’s perfect for diverse industries, from automotive to telecommunications. Trust in STMicroelectronics’ legacy of quality and innovation—your projects deserve nothing less!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent durability and resistance to environmental factors, ensuring longevity and reliability in various applications.

Config: SINGLE

A single configuration simplifies the design and integration into circuits, making this product easy to implement without complex arrangements.

Surface Mount: YES

Surface mount technology allows for compact design, increasing board space efficiency and enabling more advanced circuit designs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high peak reverse power dissipation capability, this device can handle sudden voltage spikes effectively, protecting sensitive components.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCB layouts and provides better thermal management compared to other shapes, enhancing performance.

No. of Terminals: 2

Having only two terminals simplifies the electrical connections, making it user-friendly and suitable for a wide range of applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a reduced footprint on the PCB, facilitating high-density designs.

Maximum Operating Temperature: 175 °C

The ability to operate at high temperatures ensures reliability and performance in demanding environments, which is crucial for automotive and industrial applications.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55 °C, this device is suitable for extreme conditions, making it ideal for aerospace and military applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability and ease of assembly.

Terminal Position: DUAL

Dual terminal positioning enhances connection stability and mechanical support, improving performance in dynamic environments.

Minimum Breakdown Voltage: 171 V

A minimum breakdown voltage of 171 V offers effective protection against voltage spikes, safeguarding connected electronic components.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for compatibility with lead-free soldering processes, meeting modern manufacturing standards.

Maximum Breakdown Voltage: 189 V

The maximum breakdown voltage capability provides assurance against overvoltage conditions, enhancing the safety and reliability of the device.

Reference Standard: IEC-61000-4-2

Compliance with IEC-61000-4-2 standards ensures electromagnetic compatibility and reliability, making it a trustworthy choice for industrial applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, this device is specifically designed to protect against voltage transients, ensuring the safety of sensitive electronic circuits.

Technology: AVALANCHE

Avalanche technology allows for fast response to transient events, providing exceptional protection in high-speed applications.

Terminal Form: FLAT

Flat terminals facilitate easier and more reliable soldering to printed circuit boards, reducing the risk of connection failures.

Maximum Repetitive Peak Reverse Voltage: 154 V

This specification indicates strong protection capabilities against repeated surges, ensuring system reliability and performance under stress.

Polarity: UNIDIRECTIONAL

Being unidirectional makes this device suitable for specific applications where only one direction of voltage needs to be suppressed, optimizing its effectiveness.

Diode Element Material: SILICON

Silicon material provides good thermal conductivity and electronic properties, ensuring efficient performance and longevity of the device.

Technical Specifications

Transient Suppression Devices SMA6F154A attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

189 V

Minimum Breakdown Voltage:

171 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-221AC

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

154 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMA6F154A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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