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END Diodes & Rectifiers 175

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
BAS85-M-18 by Vishay Intertechnology

BAS85-M-18

Vishay Intertechnology

Vishay Intertechnology's BAS85-M-18 is a Schottky rectifier diode with 0.24V VF, 0.2A output current, and 30V repetitive peak reverse voltage. Ideal for applications requiring fast switching speeds and low forward voltage drop in compact electronic devices. Its glass package body material and surface mount configuration make it suitable for high-temperature environments up to 125°C.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.24 V

O-LELF-R2

.6 A

1

1

2

125 Cel

.2 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

.2 W

Not Qualified

30 V

.005 us

Rectifier Diodes

YES

SCHOTTKY

WRAP AROUND

END

NOT SPECIFIED

LL5819L0 by Taiwan Semiconductor

LL5819L0

Taiwan Semiconductor

LL5819L0 by Taiwan Semiconductor is a Schottky rectifier diode with 40V peak reverse voltage and 1A output current. It comes in a plastic/epoxy package, suitable for surface mount applications. Operating temperature ranges from -65°C to 125°C, making it ideal for various electronic circuits.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

1

1

2

125 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

40 V

YES

SCHOTTKY

WRAP AROUND

END

NOT SPECIFIED

1N5817M-13 by Diodes Incorporated

1N5817M-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

150 Cel

-65 Cel

1 A

GLASS

ROUND

LONG FORM

Not Qualified

20 V

YES

SCHOTTKY

WRAP AROUND

END

1N5819M-13 by Diodes Incorporated

1N5819M-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

150 Cel

-65 Cel

1 A

GLASS

ROUND

LONG FORM

Not Qualified

40 V

YES

SCHOTTKY

WRAP AROUND

END

BAS383TR3 by Vishay Telefunken

BAS383TR3

Vishay Telefunken

Vishay Telefunken's BAS383TR3 is a RECTIFIER DIODE in GLASS package with 2 terminals for surface mount applications. Its ROUND shape and LONG FORM style make it ideal for end terminal positions. Perfect for various electronic circuits requiring efficient rectification.

RECTIFIER DIODE

O-LELF-R2

2

GLASS

ROUND

LONG FORM

Not Qualified

YES

WRAP AROUND

END

VS-SD1500C30L by Vishay Intertechnology

VS-SD1500C30L

Vishay Intertechnology

VS-SD1500C30L by Vishay Intertechnology is a single rectifier diode with 3000V peak reverse voltage, 1600A output current, and 1.64V forward voltage. Ideal for high voltage applications, it operates b/w -40°C to 180°C. The ceramic-metal sealed co-fired package ensures reliability in extreme conditions.

HIGH VOLTAGE

SINGLE

SILICON

RECTIFIER DIODE

1.64 V

DO-200AB

O-CEDB-N2

17400 A

1

1

2

180 Cel

-40 Cel

1600 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

3000 V

50000 uA

YES

NO LEAD

END

NOT SPECIFIED

VS-SD1100C30C by Vishay Intertechnology

VS-SD1100C30C

Vishay Intertechnology

VS-SD1100C30C by Vishay Intertechnology is a single rectifier diode with 3000V reverse voltage, 1100A output current, and 1.44V forward voltage. Its ceramic-metal-sealed co-fired body makes it suitable for high-voltage, high-power applications. With an operating temperature range of -40 to 150°C, it's ideal for demanding environments.

HIGH VOLTAGE HIGH POWER

SINGLE

SILICON

RECTIFIER DIODE

1.44 V

O-CEDB-N2

11000 A

1

1

2

150 Cel

-40 Cel

1100 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

3000 V

35000 uA

YES

NO LEAD

END

NOT SPECIFIED

VS-SD2000C04L by Vishay Intertechnology

VS-SD2000C04L

Vishay Intertechnology

VS-SD2000C04L by Vishay Intertechnology is a single rectifier diode with 400V max reverse voltage and 2100A max output current. Its ceramic-metal package makes it suitable for high voltage, high power applications. With a max operating temp of 180°C, it is ideal for demanding environments.

HIGH VOLTAGE HIGH POWER

SINGLE

SILICON

RECTIFIER DIODE

1.55 V

DO-200AB

O-CEDB-N2

25000 A

1

1

2

180 Cel

-40 Cel

2100 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

400 V

60000 uA

YES

NO LEAD

END

NOT SPECIFIED

VS-SD2500C20K by Vishay Intertechnology

VS-SD2500C20K

Vishay Intertechnology

VS-SD2500C20K by Vishay Intertechnology is a single rectifier diode with a max reverse current of 75000uA and max output current of 3000A. It operates in high voltage applications, with a max repetitive peak reverse voltage of 2000V and can withstand temperatures from -40 to 180°C.

HIGH VOLTAGE

SINGLE

SILICON

RECTIFIER DIODE

1.41 V

DO-200AC

O-CEDB-N2

32460 A

1

1

2

180 Cel

-40 Cel

3000 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

2000 V

75000 uA

YES

NO LEAD

END

NOT SPECIFIED

VS-SD3000C10K by Vishay Intertechnology

VS-SD3000C10K

Vishay Intertechnology

VS-SD3000C10K by Vishay Intertechnology is a single rectifier diode with max output current of 1925A and max repetitive peak reverse voltage of 1000V. Ideal for applications requiring high power efficiency, it operates b/w -40 to 180°C, making it suitable for various industrial and electronic systems.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.22 V

DO-200AC

O-CEDB-N2

37500 A

1

1

2

180 Cel

-40 Cel

1925 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

1000 V

75000 uA

YES

NO LEAD

END

NOT SPECIFIED

VS-SD400C20C by Vishay Intertechnology

VS-SD400C20C

Vishay Intertechnology

VS-SD400C20C by Vishay Intertechnology is a single rectifier diode with a max reverse current of 15mA. It operates in high voltage, high power applications with a max output current of 800A and a max repetitive peak reverse voltage of 2000V. The diode is designed for use in extreme temperatures ranging from -40°C to 190°C.

HIGH VOLTAGE HIGH POWER

SINGLE

SILICON

RECTIFIER DIODE

1.86 V

DO-200AA

O-CEDB-N2

8640 A

1

1

2

190 Cel

-40 Cel

800 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

2000 V

15000 uA

YES

NO LEAD

END

NOT SPECIFIED

VS-SD1553C18S20K by Vishay Intertechnology

VS-SD1553C18S20K

Vishay Intertechnology

VS-SD1553C18S20K by Vishay Intertechnology is a ceramic, metal-sealed co-fired rectifier diode with 2μs reverse recovery time and 75000μA reverse current. Ideal for high voltage, high power applications requiring fast soft recovery. Features include 1825A output current, 1800V peak reverse voltage, and -40 to 150°C operating temperature range.

FREE WHEELING DIODE

HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

2.23 V

DO-200AC

O-CEDB-N2

26180 A

1

1

2

150 Cel

-40 Cel

1825 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

1800 V

75000 uA

2 us

YES

NO LEAD

END

NOT SPECIFIED

VS-SD1553C18S30K by Vishay Intertechnology

VS-SD1553C18S30K

Vishay Intertechnology

VS-SD1553C18S30K by Vishay Intertechnology is a ceramic, metal-sealed co-fired diode with 3us reverse recovery time and 75000uA reverse current. Ideal for high voltage, high power applications requiring fast soft recovery. Features include 1650A output current, 1800V peak reverse voltage, and -40 to 150°C operating temperature range.

FREE WHEELING DIODE

HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

2.6 V

DO-200AC

O-CEDB-N2

23000 A

1

1

2

150 Cel

-40 Cel

1650 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

1800 V

75000 uA

3 us

YES

NO LEAD

END

NOT SPECIFIED

VS-SD1553C25S20K by Vishay Intertechnology

VS-SD1553C25S20K

Vishay Intertechnology

VS-SD1553C25S20K by Vishay Intertechnology is a single rectifier diode with a max reverse recovery time of 2 us and max output current of 1825 A. Ideal for high voltage, high power applications requiring fast soft recovery. Features a ceramic, metal-sealed cofired package body material and operates b/w -40 to 150 °C.

FREE WHEELING DIODE

HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

2.23 V

DO-200AC

O-CEDB-N2

26180 A

1

1

2

150 Cel

-40 Cel

1825 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

2500 V

75000 uA

2 us

YES

NO LEAD

END

NOT SPECIFIED

VS-SD1553C25S30K by Vishay Intertechnology

VS-SD1553C25S30K

Vishay Intertechnology

VS-SD1553C25S30K by Vishay Intertechnology is a single rectifier diode with a max reverse recovery time of 3 us and max output current of 1650 A. Ideal for high voltage, high power applications requiring fast soft recovery, it has a max repetitive peak reverse voltage of 2500 V. The diode's ceramic, metal-sealed cofired package body material ensures reliable performance in temperatures ranging from -40 to 150 °C.

FREE WHEELING DIODE

HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

2.6 V

DO-200AC

O-CEDB-N2

23000 A

1

1

2

150 Cel

-40 Cel

1650 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

2500 V

75000 uA

3 us

YES

NO LEAD

END

NOT SPECIFIED

VS-SD1553C30S30K by Vishay Intertechnology

VS-SD1553C30S30K

Vishay Intertechnology

VS-SD1553C30S30K by Vishay Intertechnology is a single rectifier diode with 3000V max reverse voltage and 1650A max output current. Ideal for high voltage, high power applications requiring fast soft recovery. Features include 3us max reverse recovery time and ceramic/metal-sealed cofired package body material.

FREE WHEELING DIODE

HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

2.6 V

DO-200AC

O-CEDB-N2

23000 A

1

1

2

150 Cel

-40 Cel

1650 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

3000 V

75000 uA

3 us

YES

NO LEAD

END

NOT SPECIFIED

VS-SD300C04C by Vishay Intertechnology

VS-SD300C04C

Vishay Intertechnology

VS-SD300C04C by Vishay Intertechnology is a single rectifier diode with a max output current of 650A and max repetitive peak reverse voltage of 400V. It is designed for high voltage, high power applications, featuring a ceramic, metal-sealed cofired package body material. With a max operating temperature of 180°C and min of -40°C, it is suitable for demanding environments.

HIGH VOLTAGE HIGH POWER

SINGLE

SILICON

RECTIFIER DIODE

2.08 V

DO-200AA

O-CEDB-N2

6335 A

1

1

2

180 Cel

-40 Cel

650 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

400 V

15000 uA

YES

NO LEAD

END

NOT SPECIFIED

VS-SD1700C30K by Vishay Intertechnology

VS-SD1700C30K

Vishay Intertechnology

VS-SD1700C30K by Vishay Intertechnology is a single rectifier diode with 3000V reverse voltage, 2080A output current, and 1.81V forward voltage. Ideal for high voltage high power applications, this ceramic-metal sealed diode operates b/w -40°C to 150°C, making it suitable for demanding environments.

HIGH VOLTAGE HIGH POWER

SINGLE

SILICON

RECTIFIER DIODE

1.81 V

DO-200AC

O-CEDB-N2

25150 A

1

1

2

150 Cel

-40 Cel

2080 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

3000 V

75000 uA

YES

NO LEAD

END

NOT SPECIFIED

VS-SD703C25S30L by Vishay Intertechnology

VS-SD703C25S30L

Vishay Intertechnology

VS-SD703C25S30L by Vishay Intertechnology is a single rectifier diode with 3us reverse recovery time, 50000uA reverse current, and 2500V peak reverse voltage. Ideal for high voltage, high power applications requiring fast soft recovery. Operates b/w -40 to 150 °C with a max output current of 790A.

FREE WHEELING DIODE, SNUBBER DIODE

HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.85 V

DO-200AB

O-CEDB-N2

10050 A

1

1

2

150 Cel

-40 Cel

790 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

NOT SPECIFIED

2500 V

50000 uA

3 us

YES

NO LEAD

END

NOT SPECIFIED

BYM10-400HE3/97 by Vishay Intertechnology

BYM10-400HE3/97

Vishay Intertechnology

Vishay Intertechnology's BYM10-400HE3/97 is a single rectifier diode with a max forward voltage of 1.1V and max output current of 1A. It is commonly used in applications requiring high voltage rectification, such as power supplies and automotive electronics.

FREE WHEELING DIODE, HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-213AB

O-PELF-R2

e3

1

30 A

1

1

2

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

AEC-Q101

400 V

Rectifier Diodes

YES

MATTE TIN

WRAP AROUND

END

BYD17D,115 by NXP Semiconductors

BYD17D,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

225 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

200 V

1 uA

3 us

200 V

YES

AVALANCHE

WRAP AROUND

END

BYD17G,115 by NXP Semiconductors

BYD17G,115

NXP Semiconductors

BYD17G,115 by NXP Semiconductors is a single rectifier diode with a max reverse recovery time of 3 us and a max reverse current of 1 uA. It has a package shape of round and can handle a max reverse test voltage of 400 V. This diode is suitable for applications requiring high efficiency and low forward voltage drop in electronic circuits.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

450 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

400 V

1 uA

3 us

400 V

YES

AVALANCHE

WRAP AROUND

END

BYD17J,115 by NXP Semiconductors

BYD17J,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

650 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

600 V

1 uA

3 us

600 V

YES

AVALANCHE

WRAP AROUND

END

BYD17K,135 by NXP Semiconductors

BYD17K,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

800 V

3 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYD37M,115 by NXP Semiconductors

BYD37M,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

FAST SOFT RECOVERY

1100 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

1000 V

1 uA

.3 us

1000 V

YES

AVALANCHE

WRAP AROUND

END

BYD77B,115 by NXP Semiconductors

BYD77B,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

.85 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

100 V

.025 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYD77D,115 by NXP Semiconductors

BYD77D,115

NXP Semiconductors

BYD77D,115 by NXP Semiconductors is a single rectifier diode with a max output current of 0.85A and a max repetitive peak reverse voltage of 200V. It has a fast max reverse recovery time of 0.025us, making it suitable for applications requiring high-speed switching such as power supplies and inverters. The diode's technology is avalanche-based, ensuring efficient performance even at an operating temperature of up to 175°C.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

.85 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

200 V

.025 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

PRLL4001,115 by NXP Semiconductors

PRLL4001,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

.68 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

50 V

YES

WRAP AROUND

END

NOT SPECIFIED

MR3025 by Onsemi

MR3025

Onsemi

The Onsemi MR3025 is a single rectifier diode with a max output current of 25A and a max repetitive peak reverse voltage of 250V. It features a ceramic, metal-sealed cofired package body material and is surface mountable. Ideal for applications requiring high current rectification in compact spaces.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.18 V

O-CEDB-N2

e3

400 A

1

1

2

175 Cel

25 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

260

Not Qualified

250 V

Rectifier Diodes

YES

TIN

NO LEAD

END

TRA2525 by Onsemi

TRA2525

Onsemi

TRA2525 by Onsemi is a single rectifier diode with a max output current of 25A and a max repetitive peak reverse voltage of 250V. It is designed for applications requiring high power efficiency and reliability, such as in power supplies, industrial equipment, and automotive systems. The diode's ceramic-metal-sealed co-fired package body material ensures durability at temperatures up to 175 °C.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.18 V

O-CEDB-N2

e3

400 A

1

1

2

175 Cel

25 A

CERAMIC, METAL-SEALED COFIRED

ROUND

DISK BUTTON

260

Not Qualified

250 V

Rectifier Diodes

YES

TIN

NO LEAD

END

SDMP0340LCT-7 by Diodes Incorporated

SDMP0340LCT-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.37 V

R-PDSO-G3

e0

.2 A

2

3

125 Cel

.03 A

PLASTIC/EPOXY

RECTANGULAR

LONG FORM

.15 W

Not Qualified

40 V

Rectifier Diodes

YES

SCHOTTKY

TIN LEAD

GULL WING

END

SDMP0340LT-7 by Diodes Incorporated

SDMP0340LT-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

.37 V

R-PDSO-G3

e0

.2 A

1

1

3

125 Cel

.03 A

PLASTIC/EPOXY

RECTANGULAR

LONG FORM

.15 W

Not Qualified

40 V

Rectifier Diodes

YES

SCHOTTKY

TIN LEAD

GULL WING

END

LLSD101A-13 by Diodes Incorporated

LLSD101A-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

e2

1

1

2

125 Cel

-55 Cel

.015 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

60 V

.001 us

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD101A-7 by Diodes Incorporated

LLSD101A-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

e2

1

1

2

125 Cel

-55 Cel

.015 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

60 V

.001 us

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD101B-7 by Diodes Incorporated

LLSD101B-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

e2

1

1

2

125 Cel

-55 Cel

.015 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

50 V

.001 us

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD101C-13 by Diodes Incorporated

LLSD101C-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

e2

1

1

2

125 Cel

-55 Cel

.015 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

40 V

.001 us

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD101C-7 by Diodes Incorporated

LLSD101C-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

e2

1

1

2

125 Cel

-55 Cel

.015 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

40 V

.001 us

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD103A-13 by Diodes Incorporated

LLSD103A-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.37 V

O-LELF-R2

e2

7.5 A

1

1

2

125 Cel

-55 Cel

.35 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

40 V

.01 us

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD103A-7 by Diodes Incorporated

LLSD103A-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.37 V

O-LELF-R2

e2

1

7.5 A

1

1

2

125 Cel

-55 Cel

.35 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

40 V

.01 us

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD103B-13 by Diodes Incorporated

LLSD103B-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.37 V

O-LELF-R2

e2

7.5 A

1

1

2

125 Cel

-55 Cel

.35 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

30 V

.01 us

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD103B-7 by Diodes Incorporated

LLSD103B-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.37 V

O-LELF-R2

e2

7.5 A

1

1

2

125 Cel

-55 Cel

.35 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

30 V

.01 us

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD103C-13 by Diodes Incorporated

LLSD103C-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.37 V

O-LELF-R2

e2

7.5 A

1

1

2

125 Cel

-55 Cel

.35 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

20 V

.01 us

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

LLSD103C-7 by Diodes Incorporated

LLSD103C-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.37 V

O-LELF-R2

e2

7.5 A

1

1

2

125 Cel

-55 Cel

.35 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

20 V

.01 us

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

BAV103-7 by Diodes Incorporated

BAV103-7

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

.125 A

GLASS

ROUND

LONG FORM

.5 W

Not Qualified

250 V

.05 us

YES

WRAP AROUND

END

DL4001-13 by Diodes Incorporated

DL4001-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

O-PELF-R2

e0

30 A

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

235

Not Qualified

50 V

Rectifier Diodes

YES

Tin/Lead (Sn/Pb)

WRAP AROUND

END

10

DL4002-13 by Diodes Incorporated

DL4002-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

O-PELF-R2

e0

30 A

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

100 V

Rectifier Diodes

YES

TIN LEAD

WRAP AROUND

END

DL4003-13 by Diodes Incorporated

DL4003-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

O-PELF-R2

e0

30 A

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

Rectifier Diodes

YES

TIN LEAD

WRAP AROUND

END

DL4004-13 by Diodes Incorporated

DL4004-13

Diodes Incorporated

DL4004-13 by Diodes Inc. is a single rectifier diode with max VF of 1.1V and 400V peak reverse voltage. It's a surface mount component in plastic/epoxy package, suitable for applications requiring up to 1A output current at 150°C operating temperature.

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

O-PELF-R2

e0

30 A

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

400 V

Rectifier Diodes

YES

TIN LEAD

WRAP AROUND

END