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VS-SD1700C30K

Vishay Intertechnology

VS-SD1700C30K by Vishay Intertechnology

VS-SD1700C30K by Vishay Intertechnology is a single rectifier diode with 3000V reverse voltage, 2080A output current, and 1.81V forward voltage. Ideal for high voltage high power applications, this ceramic-metal sealed diode operates b/w -40°C to 150°C, making it suitable for demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,457 parts In-Stock

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7,457

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Nova Conductors

Japan . 150 parts In-Stock

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150

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ComSIT Distribution GmbH

Germany . 41 parts In-Stock

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41

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Distributors (Availability)

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Corohmni

South Africa . 826 parts In-Stock

1+ parts

$0.124

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826

$0.124

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Aztec Data Supply Inc.

USA . 1,576 parts In-Stock

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$0.190

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1,576

$0.190

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Ampacity Inc.

Singapore . 732 parts In-Stock

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$2.010

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732

$2.010

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AZTECH Wire

Italy . 884 parts In-Stock

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$19.544

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884

$19.544

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Microchip USA

USA . 8,382 parts In-Stock

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$361.545

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8,382

$361.545

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Argo Parts USA

USA . 3,278 parts In-Stock

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Continental Prestige Electronics

USA . 2,066 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Unlock the power of high voltage and high power applications with the VS-SD1700C30K by Vishay Intertechnology. Known for their superior quality and reliability, Vishay Intertechnology delivers cutting-edge diodes and rectifiers that exceed industry standards. The VS-SD1700C30K offers customers unmatched value with its high performance capabilities, ensuring optimal efficiency and functionality in a variety of electronic systems. Experience the advantages of Vishay Intertechnology's expertise and innovation with the VS-SD1700C30K today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides excellent durability and resistance to high temperatures, making this diode ideal for high voltage high power applications.

Config: SINGLE

Single configuration makes installation and usage straightforward, suitable for various electronic systems.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient integration onto circuit boards.

Maximum Reverse Current: 75000 uA

Low maximum reverse current ensures efficient performance and reliability of the diode.

Package Shape: ROUND

Round package shape provides uniform distribution of heat and optimal electrical performance.

No. of Terminals: 2

Having two terminals simplifies connection and ensures stability in the circuit.

Package Style (Meter): DISK BUTTON

The disk button package style is compact and easy to handle, suitable for high voltage high power applications.

Application: HIGH VOLTAGE HIGH POWER

Specifically designed for high voltage high power applications, ensuring reliable and efficient operation in demanding environments.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this diode can withstand high temperature conditions without performance degradation.

Minimum Operating Temperature: -40 °C

The diode can operate reliably even at low temperatures as low as -40°C, providing versatility in various environmental conditions.

Terminal Position: END

End terminal position simplifies installation and connection within electronic systems.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC voltage for power transmission and various applications.

Maximum Forward Voltage (VF): 1.81 V

Low forward voltage drop of 1.81 V leads to minimal power loss and efficient performance of the diode.

Maximum Output Current: 2080 A

High maximum output current of 2080 A allows for handling of large power loads and is suitable for high power applications.

Terminal Form: NO LEAD

No lead terminal form simplifies installation and connection, making it easier to integrate into electronic systems.

Maximum Repetitive Peak Reverse Voltage: 3000 V

High maximum repetitive peak reverse voltage of 3000 V ensures reliable performance in high voltage applications.

Maximum Non Repetitive Peak Forward Current: 25150 A

The diode can handle high peak forward currents up to 25150 A, suitable for transient power conditions in high power environments.

Diode Element Material: SILICON

Silicon diode element material provides high reliability, efficiency, and performance in various electronic applications.

Technical Specifications

Diodes & Rectifiers VS-SD1700C30K attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Application:

HIGH VOLTAGE HIGH POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.81 V

JEDEC-95 Code:

DO-200AC

JESD-30 Code:

O-CEDB-N2

Maximum Non Repetitive Peak Forward Current:

25150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

2080 A

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

3000 V

Maximum Reverse Current:

75000 uA

Surface Mount:

YES

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

VS-SD1700C30K Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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