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RECTANGULAR Bridge Rectifier Diodes 282

Bridge Rectifier Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
NTE5391 by Nte Electronics

NTE5391

Nte Electronics

NTE5391 by Nte Electronics is a BRIDGE RECTIFIER DIODE with 4 elements, 400V reverse test voltage, and 35A max output current. Ideal for applications requiring high power rectification in electronic circuits. Operates b/w -55°C to 150°C temperature range efficiently.

400 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-XSIP-T4

300 A

4

1

4

150 Cel

-55 Cel

35 A

UNSPECIFIED

RECTANGULAR

IN-LINE

400 V

5 uA

400 V

NO

THROUGH-HOLE

SINGLE

NTE5392 by Nte Electronics

NTE5392

Nte Electronics

NTE5392 by Nte Electronics is a BRIDGE RECTIFIER DIODE with 4 elements, capable of handling 35A output current and 600V reverse voltage. Ideal for applications requiring high power rectification in industrial electronics, automation systems, and power supplies.

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-XSIP-T4

300 A

4

1

4

150 Cel

-55 Cel

35 A

UNSPECIFIED

RECTANGULAR

IN-LINE

600 V

5 uA

600 V

NO

THROUGH-HOLE

SINGLE

NTE5393 by Nte Electronics

NTE5393

Nte Electronics

NTE5393 by Nte Electronics is a BRIDGE RECTIFIER DIODE with 4 elements, 800V reverse test voltage, and 35A max output current. Ideal for applications requiring high voltage rectification such as power supplies and industrial equipment due to its robust design and wide operating temperature range from -55°C to 150°C.

800 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-XSIP-T4

300 A

4

1

4

150 Cel

-55 Cel

35 A

UNSPECIFIED

RECTANGULAR

IN-LINE

800 V

5 uA

800 V

NO

THROUGH-HOLE

SINGLE

NTE5394 by Nte Electronics

NTE5394

Nte Electronics

NTE5394 by Nte Electronics is a BRIDGE RECTIFIER DIODE with 4 elements, capable of handling up to 35A output current and 1000V reverse voltage. Ideal for applications requiring high power rectification in industrial electronics, automation systems, and power supplies.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-XSIP-T4

300 A

4

1

4

150 Cel

-55 Cel

35 A

UNSPECIFIED

RECTANGULAR

IN-LINE

1000 V

5 uA

1000 V

NO

THROUGH-HOLE

SINGLE

DB107S-G by Comchip Technology

DB107S-G

Comchip Technology

Comchip Technology's DB107S-G is a bridge rectifier diode with 4 elements, 1000V reverse test voltage, and 1A max output current. It is used in applications requiring high voltage rectification such as power supplies and battery chargers.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDSO-G4

50 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

1000 V

10 uA

1000 V

YES

GULL WING

DUAL

TS6P07G by Taiwan Semiconductor

TS6P07G

Taiwan Semiconductor

TS6P07G by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, max output current of 6A, and max repetitive peak reverse voltage of 1000V. It is used in applications requiring high voltage rectification such as power supplies and battery chargers.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PSFM-T4

e3

1

150 A

4

1

4

150 Cel

-55 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

Not Qualified

UL RECOGNIZED

1000 V

10 uA

Bridge Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

VUB116-16NOXT by IXYS Corporation

VUB116-16NOXT

IXYS Corporation

IXYS Corporation's VUB116-16NOXT is a BRIDGE RECTIFIER DIODE with 6 elements, built-in IGBT, and thermistor. It has a max output current of 116A, max forward voltage of 2.75V, and max repetitive peak reverse voltage of 1600V. Ideal for applications requiring high power rectification in industrial settings.

ISOLATED

BRIDGE, 6 ELEMENTS WITH BUILT-IN IGBT AND THERMISTOR

SILICON

BRIDGE RECTIFIER DIODE

2.75 V

R-XUFM-X22

700 A

6

3

22

125 Cel

-40 Cel

116 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

1600 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUB145-16NOXT by IXYS Corporation

VUB145-16NOXT

IXYS Corporation

VUB145-16NOXT by IXYS: Bridge rectifier diode with 6 elements, IGBT, and thermistor. Max output current of 145A, max repetitive peak reverse voltage of 1600V. Ideal for applications requiring high power conversion efficiency and temperature stability in industrial settings.

ISOLATED

BRIDGE, 6 ELEMENTS WITH BUILT-IN IGBT AND THERMISTOR

SILICON

BRIDGE RECTIFIER DIODE

1.68 V

R-XUFM-X22

1100 A

6

3

22

125 Cel

-40 Cel

145 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

Not Qualified

1600 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

VUB72-12NOXT by IXYS Corporation

VUB72-12NOXT

IXYS Corporation

VUB72-12NOXT by IXYS: Bridge rectifier diode with 6 elements, IGBT, and thermistor. Max output current of 40A, max repetitive peak reverse voltage of 1200V. Ideal for applications requiring high power efficiency and temperature range from -40 to 150°C.

HIGH RELIABILITY

ISOLATED

BRIDGE, 6 ELEMENTS WITH BUILT-IN IGBT AND THERMISTOR

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-XUFM-X12

530 A

6

3

12

150 Cel

-40 Cel

40 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

Not Qualified

1200 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

GSIB2520N-M3/45 by Vishay Intertechnology

GSIB2520N-M3/45

Vishay Intertechnology

GSIB2520N-M3/45 by Vishay Intertechnology is a bridge rectifier diode with 4 elements, max output current of 3.5A, and max repetitive peak reverse voltage of 200V. It is used in applications requiring high efficiency power conversion and operates within a temperature range of -55 to 150°C. The package style is flange mount with through-hole terminals for easy installation.

200 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1 V

R-PSFM-T4

350 A

4

1

4

150 Cel

-55 Cel

3.5 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

UL RECOGNIZED

200 V

Bridge Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GBL02-M3/51 by Vishay Intertechnology

GBL02-M3/51

Vishay Intertechnology

Vishay Intertechnology's GBL02-M3/51 is a bridge rectifier diode with 4 elements, max output current of 3A, and max repetitive peak reverse voltage of 200V. Ideal for applications requiring high efficiency AC to DC conversion in electronic circuits. Operates within -55°C to 150°C temperature range.

200 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSIP-T4

e3

150 A

4

1

4

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

UL RECOGNIZED

200 V

NO

MATTE TIN

THROUGH-HOLE

SINGLE

DSRHD10-13 by Diodes Incorporated

DSRHD10-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.95 V

R-PDSO-F4

e3

1

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

1000 V

Bridge Rectifier Diodes

YES

BLANK

MATTE TIN

FLAT

DUAL

30

GBU601D2G by Taiwan Semiconductor

GBU601D2G

Taiwan Semiconductor

GBU601D2G by Taiwan Semiconductor is a Bridge Rectifier Diode with 4 elements, capable of handling up to 6A output current. It operates b/w -55°C to 150°C and has a max breakdown voltage of 50V. Ideal for applications requiring rectification in electronic circuits.

50 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

e3

175 A

4

1

4

150 Cel

-55 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

AEC-Q101; UL RECOGNIZED

50 V

NO

MATTE TIN

THROUGH-HOLE

SINGLE

10

DDB6U144N16RBOSA1 by Infineon Technologies

DDB6U144N16RBOSA1

Infineon Technologies

DDB6U144N16RBOSA1 by Infineon is a BRIDGE RECTIFIER DIODE with 6 elements, max output current of 173A, and max reverse voltage of 1600V. It is used in applications requiring high power rectification such as industrial machinery and power supplies due to its robust design and high current handling capabilities.

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-XUFM-X17

1200 A

6

3

17

150 Cel

173 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

1600 V

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

DDB6U100N16RBOSA1 by Infineon Technologies

DDB6U100N16RBOSA1

Infineon Technologies

BRIDGE RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: UNSPECIFIED; No. of Terminals: 17; Surface Mount: NO; Package Shape: RECTANGULAR;

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-XUFM-X17

650 A

6

3

17

150 Cel

104 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

1600 V

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VS-26MT120 by Vishay Intertechnology

VS-26MT120

Vishay Intertechnology

VS-26MT120 by Vishay Intertechnology is a bridge rectifier diode with 6 elements, 1200V peak reverse voltage, and 25A output current. Ideal for applications requiring high power conversion efficiency in industrial electronics, it operates b/w -55°C to 150°C temperature range with UL recognition.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PUFM-D5

e4

375 A

6

3

5

150 Cel

-55 Cel

25 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

1200 V

NO

GOLD

SOLDER LUG

UPPER

VS-36MT120 by Vishay Intertechnology

VS-36MT120

Vishay Intertechnology

VS-36MT120 by Vishay Intertechnology is a bridge rectifier diode with 6 elements, max output current of 35A, and max repetitive peak reverse voltage of 1200V. Ideal for applications requiring high power conversion efficiency in industrial machinery and power supplies.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PUFM-D5

e4

500 A

6

3

5

150 Cel

-55 Cel

35 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

1200 V

NO

GOLD

SOLDER LUG

UPPER

VS-36MT160 by Vishay Intertechnology

VS-36MT160

Vishay Intertechnology

VS-36MT160 by Vishay Intertechnology is a bridge rectifier diode with 6 elements, max output current of 35A, and max repetitive peak reverse voltage of 1600V. Ideal for applications requiring high power rectification in industrial machinery or power supplies due to its UL recognized standard and isolated case connection.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PUFM-D5

e4

500 A

6

3

5

150 Cel

-55 Cel

35 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

1600 V

NO

GOLD

SOLDER LUG

UPPER

SBR2A40BLP-13 by Diodes Incorporated

SBR2A40BLP-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

40 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PBCC-N4

e3

1

70 A

4

1

4

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

AEC-Q101

40 V

YES

MATTE TIN

NO LEAD

BOTTOM

30

GBU1006F by Hy Electronic

GBU1006F

Hy Electronic

Hy Electronic GBU1006F is a bridge rectifier diode with 4 elements, max output current of 3A, and max repetitive peak reverse voltage of 600V. It operates b/w -55°C to 150°C, making it suitable for applications requiring high voltage rectification in various electronic circuits.

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

220 A

4

1

4

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

600 V

NO

THROUGH-HOLE

SINGLE

SDM1L30BLP-13 by Diodes Incorporated

SDM1L30BLP-13

Diodes Incorporated

SDM1L30BLP-13 by Diodes Inc. is a bridge rectifier diode with a max output current of 1A and a min breakdown voltage of 30V. It is surface mountable and commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of 1.

HIGH RELIABILITY

30 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PBCC-N4

e3

1

50 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

AEC-Q101

30 V

YES

SCHOTTKY

MATTE TIN

NO LEAD

BOTTOM

30

PL100 by Electronic Devices

PL100

Electronic Devices

PL100 by Electronic Devices is a Bridge Rectifier Diode with 4 elements, max output current of 1A, and max repetitive peak reverse voltage of 1000V. Ideal for applications requiring rectification of AC to DC power sources in electronic circuits. Operates b/w -55°C to 150°C temperature range.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.2 V

R-PDIP-T4

50 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Not Qualified

1000 V

.000005 uA

Bridge Rectifier Diodes

NO

THROUGH-HOLE

DUAL

VS-1KAB60E by Vishay Intertechnology

VS-1KAB60E

Vishay Intertechnology

VS-1KAB60E by Vishay Intertechnology is a bridge rectifier diode with 600V peak reverse voltage and 1.2A output current. It operates b/w -40°C to 150°C, making it suitable for various applications requiring rectification of AC to DC current in electronic circuits.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDIP-W4

52 A

4

1

4

150 Cel

-40 Cel

1.2 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

600 V

Bridge Rectifier Diodes

NO

WIRE

DUAL

NOT SPECIFIED

VS-2KBB100R by Vishay Intertechnology

VS-2KBB100R

Vishay Intertechnology

VS-2KBB100R by Vishay Intertechnology is a bridge rectifier diode with 4 elements, max output current of 1.9A, and max reverse voltage of 1000V. Ideal for applications requiring rectification of AC to DC power sources in electronic circuits.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSIP-W4

52 A

4

1

4

150 Cel

-40 Cel

1.9 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

1000 V

NO

WIRE

SINGLE

NOT SPECIFIED

VS-2KBB60R by Vishay Intertechnology

VS-2KBB60R

Vishay Intertechnology

VS-2KBB60R by Vishay Intertechnology is a bridge rectifier diode with 4 elements. It has a max output current of 1.9A and can handle a max repetitive peak reverse voltage of 600V. This diode is commonly used in applications requiring rectification of AC to DC power.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSIP-W4

52 A

4

1

4

150 Cel

-40 Cel

1.9 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

600 V

NO

WIRE

SINGLE

NOT SPECIFIED

VS-2KBP04 by Vishay Intertechnology

VS-2KBP04

Vishay Intertechnology

VS-2KBP04 by Vishay Intertechnology is a bridge rectifier diode with 4 elements, capable of handling a max output current of 2A and a max repetitive peak reverse voltage of 400V. Its package body material is plastic/epoxy, making it suitable for applications requiring reliable rectification in electronic circuits. With an operating temperature range from -40°C to 150°C, this diode is ideal for various industrial and consumer electronics applications.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSIP-W4

63 A

4

1

4

150 Cel

-40 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

400 V

NO

WIRE

SINGLE

NOT SPECIFIED

673-5 by Microsemi

673-5

Microsemi

Microsemi 673-5 is a bridge rectifier diode with 4 elements, 500V peak reverse voltage, and 1.5A output current. Ideal for applications requiring high voltage rectification in compact spaces due to its rectangular package shape and dual terminal position. Operates at up to 150°C with avalanche technology for reliable performance.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-XDIP-W4

e0

25 A

4

1

4

150 Cel

1.5 A

UNSPECIFIED

RECTANGULAR

IN-LINE

Not Qualified

500 V

Bridge Rectifier Diodes

NO

AVALANCHE

Tin/Lead (Sn/Pb)

WIRE

DUAL

L6210 by STMicroelectronics

L6210

STMicroelectronics

L6210 by STMicroelectronics is a bridge rectifier diode featuring a max forward voltage of 1.2V and operates b/w 0 °C to 70°C. With 16 terminals in an in-line package, it’s ideal for power conversion applications. Its Schottky technology ensures efficient performance.

2 BANKS, BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.2 V

R-PDIP-T16

e0

8

1

16

70 Cel

0 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Not Qualified

50 V

Other Diodes

NO

SCHOTTKY

TIN LEAD

THROUGH-HOLE

DUAL

DB104-SG by Surge Components

DB104-SG

Surge Components

DB104-SG by Surge Components is a bridge rectifier diode with 4 elements, max reverse voltage of 400V, and output current of 1A. It is a surface-mount device with gull wing terminals suitable for applications requiring rectification in small outline packages. Operating temperature ranges from -55°C to 150°C, making it ideal for various electronic circuits.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDSO-G4

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

UL RECOGNIZED

400 V

10 uA

400 V

YES

GULL WING

DUAL

VUO192-16NO7 by IXYS Corporation

VUO192-16NO7

IXYS Corporation

IXYS Corporation's VUO192-16NO7 is a BRIDGE RECTIFIER DIODE with 6 elements, max VF of 1.01V, and max output current of 248A. It operates b/w -55 to 150°C, ideal for applications requiring high voltage rectification and high current capabilities in industrial settings.

LOW LEAKAGE CURRENT

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.01 V

R-XUFM-X5

e3

3490 A

6

3

5

150 Cel

-55 Cel

248 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

Not Qualified

1600 V

Bridge Rectifier Diodes

NO

TIN OVER NICKEL

UNSPECIFIED

UPPER

KBU807GT0G by Taiwan Semiconductor

KBU807GT0G

Taiwan Semiconductor

KBU807GT0G by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, capable of handling up to 8A output current and 1000V reverse voltage. It features a plastic/epoxy package body material and matte tin terminal finish, suitable for applications requiring high voltage rectification in temperature range from -55°C to 150°C.

1000 V

ISOLATED

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PSFM-W4

e3

200 A

4

1

4

150 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

UL RECOGNIZED

1000 V

5 uA

1000 V

NO

MATTE TIN

WIRE

SINGLE

TS15P05GC2G by Taiwan Semiconductor

TS15P05GC2G

Taiwan Semiconductor

TS15P05GC2G by Taiwan Semiconductor is a 4-element bridge rectifier diode with max output current of 15A and max repetitive peak reverse voltage of 600V. It operates b/w -55°C to 150°C, making it suitable for applications requiring high voltage rectification in various electronic circuits. The package style is flange mount with matte tin terminal finish, conforming to UL standards.

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

e3

240 A

4

1

4

150 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

250

UL RECOGNIZED

600 V

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

VS-130MT160KPBF by Vishay Intertechnology

VS-130MT160KPBF

Vishay Intertechnology

VS-130MT160KPBF by Vishay Intertechnology is a BRIDGE RECTIFIER DIODE with 6 elements, 1600V max reverse voltage, and 130A max output current. Ideal for applications requiring high power rectification in industrial machinery and power supplies due to its UL recognized standard, -40 to 150°C operating temperature range, and robust silicon diode material.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-XUFM-X6

1180 A

6

3

6

150 Cel

-40 Cel

130 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

UL RECOGNIZED

1600 V

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VS-160MT120KPBF by Vishay Intertechnology

VS-160MT120KPBF

Vishay Intertechnology

VS-160MT120KPBF by Vishay Intertechnology is a bridge rectifier diode with 6 elements, capable of handling up to 160A output current and 1200V peak reverse voltage. It operates b/w -40°C to 150°C, making it suitable for industrial power supply applications requiring high current and voltage capabilities.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-XUFM-X6

1500 A

6

3

6

150 Cel

-40 Cel

160 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

UL RECOGNIZED

1200 V

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VS-160MT160KPBF by Vishay Intertechnology

VS-160MT160KPBF

Vishay Intertechnology

VS-160MT160KPBF by Vishay Intertechnology is a BRIDGE RECTIFIER DIODE with 6 elements, 160A max output current, and 1600V max peak reverse voltage. Ideal for applications requiring high power rectification in industrial equipment, power supplies, and motor drives due to its robust design and UL recognition.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-XUFM-X6

1500 A

6

3

6

150 Cel

-40 Cel

160 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

UL RECOGNIZED

1600 V

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VS-160MT80KPBF by Vishay Intertechnology

VS-160MT80KPBF

Vishay Intertechnology

VS-160MT80KPBF by Vishay Intertechnology is a bridge rectifier diode with 6 elements. It has a max output current of 160A and a max repetitive peak reverse voltage of 800V. This diode is commonly used in applications requiring high current rectification, such as power supplies and motor drives.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-XUFM-X6

1500 A

6

3

6

150 Cel

-40 Cel

160 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

UL RECOGNIZED

800 V

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUO105-12NO7 by IXYS Corporation

VUO105-12NO7

IXYS Corporation

IXYS Corporation's VUO105-12NO7 is a bridge rectifier diode with 6 elements, 1200V peak reverse voltage, and 160A output current. It is used in applications requiring high power conversion efficiency and UL recognized safety standards compliance at up to 150°C operating temperature.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.6 V

R-PUFM-X5

1500 A

6

3

5

150 Cel

160 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

1200 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUO105-16NO7 by IXYS Corporation

VUO105-16NO7

IXYS Corporation

IXYS Corporation's VUO105-16NO7 is a UL recognized bridge rectifier diode with 6 elements, capable of handling up to 160A output current and 1600V peak reverse voltage. Its plastic/epoxy package body material and flange mount style make it suitable for high-power applications requiring efficient rectification in three-phase systems at temperatures up to 150°C.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.6 V

R-PUFM-X5

1500 A

6

3

5

150 Cel

160 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

1600 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUO110-12NO7 by IXYS Corporation

VUO110-12NO7

IXYS Corporation

IXYS Corporation's VUO110-12NO7 is a BRIDGE RECTIFIER DIODE with 6 elements, max VF of 1.9V, and max output current of 118A. Ideal for applications requiring high voltage rectification in industrial machinery and power supplies due to its 1200V max repetitive peak reverse voltage.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.9 V

R-XUFM-X5

1000 A

6

3

5

150 Cel

-40 Cel

118 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

1200 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUO110-14NO7 by IXYS Corporation

VUO110-14NO7

IXYS Corporation

IXYS Corporation's VUO110-14NO7 is a BRIDGE RECTIFIER DIODE with 6 elements, max VF of 1.9V, and output current of 118A. Ideal for applications requiring high voltage (1400V) and current (1000A) rectification in industrial settings.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.9 V

R-XUFM-X5

1000 A

6

3

5

150 Cel

-40 Cel

118 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

1400 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUO110-16NO7 by IXYS Corporation

VUO110-16NO7

IXYS Corporation

VUO110-16NO7 by IXYS Corp is a 6-element bridge rectifier diode with max VF of 1.9V and output current of 118A. Operating b/w -40°C to 150°C, it has a max reverse voltage of 1600V. Ideal for applications requiring high current rectification in industrial power supplies.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.9 V

R-XUFM-X5

1000 A

6

3

5

150 Cel

-40 Cel

118 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

1600 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUO125-12NO7 by IXYS Corporation

VUO125-12NO7

IXYS Corporation

IXYS Corporation's VUO125-12NO7 is a bridge rectifier diode with 6 elements, 1200V peak reverse voltage, and 166A output current. It is a UL recognized component suitable for applications requiring high power conversion efficiency at up to 150°C operating temperature. The package style is flange mount with isolated case connection, making it ideal for industrial power supply systems.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.3 V

R-PUFM-X5

1800 A

6

3

5

150 Cel

166 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

1200 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUO125-16NO7 by IXYS Corporation

VUO125-16NO7

IXYS Corporation

IXYS Corporation's VUO125-16NO7 is a bridge rectifier diode with 6 elements, max VF of 1.3V, and max output current of 166A. Ideal for applications requiring high voltage (1600V) and current (1800A) such as power supplies and industrial equipment due to its UL recognized standard.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.3 V

R-PUFM-X5

1800 A

6

3

5

150 Cel

166 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

1600 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUO125-18NO7 by IXYS Corporation

VUO125-18NO7

IXYS Corporation

IXYS Corporation's VUO125-18NO7 is a bridge rectifier diode with 6 elements, 1800V peak reverse voltage, and 166A output current. It is used in applications requiring high power conversion efficiency and reliability, such as industrial power supplies and motor drives.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.3 V

R-PUFM-X5

1800 A

6

3

5

150 Cel

166 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

1800 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUO160-08NO7 by IXYS Corporation

VUO160-08NO7

IXYS Corporation

IXYS Corporation's VUO160-08NO7 is a 6-element bridge rectifier diode with max VF of 1.7V and output current of 139A. Operating b/w -40°C to 150°C, it has a max reverse voltage of 800V. Ideal for applications requiring high current rectification in industrial electronics.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.7 V

R-XUFM-X5

1600 A

6

3

5

150 Cel

-40 Cel

139 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

800 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUO160-12NO7 by IXYS Corporation

VUO160-12NO7

IXYS Corporation

IXYS Corporation's VUO160-12NO7 is a BRIDGE RECTIFIER DIODE with 6 elements, 1200V peak reverse voltage, and 139A output current. Ideal for applications requiring high power rectification in industrial machinery and power supplies due to its UL recognized standard, -40 to 150°C operating temperature range, and flange mount package style.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.7 V

R-XUFM-X5

1600 A

6

3

5

150 Cel

-40 Cel

139 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

1200 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUO160-16NO7 by IXYS Corporation

VUO160-16NO7

IXYS Corporation

IXYS Corporation's VUO160-16NO7 is a bridge rectifier diode with 6 elements. It has a max forward voltage of 1.7V and can handle an output current of up to 139A. This diode, made of silicon, is commonly used in applications requiring high voltage and current rectification.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.7 V

R-XUFM-X5

1600 A

6

3

5

150 Cel

-40 Cel

139 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

1600 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VUO190-08NO7 by IXYS Corporation

VUO190-08NO7

IXYS Corporation

IXYS Corporation's VUO190-08NO7 is a UL recognized bridge rectifier diode with 6 elements, 800V peak reverse voltage, and 165A output current. It operates b/w -40°C to 150°C, suitable for three-phase applications requiring high current and voltage rectification in flange mount configurations.

ISOLATED

BRIDGE, 6 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.4 V

R-XUFM-X5

2500 A

6

3

5

150 Cel

-40 Cel

165 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

UL RECOGNIZED

800 V

Bridge Rectifier Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED